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研究生:黃馨儀
研究生(外文):Shin-Yi Huang
論文名稱:電漿處理對低介電常數多孔矽化物薄膜之研究
論文名稱(外文):Investigation of Low Dielectric Constant Porous Silica Film by Plasma Treatment
指導教授:楊文祿
指導教授(外文):Wen-Luh Yang
學位類別:碩士
校院名稱:逢甲大學
系所名稱:產業研發碩士班
學門:商業及管理學門
學類:其他商業及管理學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:80
中文關鍵詞:電漿處理溶凝膠多孔矽化物介電層低介電常數
外文關鍵詞:plasma treatmentlow-kporous silicadielectricsol-gel
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隨著極大型積體電路技術的演進,電子訊號在金屬導線間傳遞所造成的延遲,變成半導體元件速度受限的主要原因。為了降低訊號傳遞的時間延遲,使用銅製程導線以及低介電常數材料作為導線間的絕緣層降低導線間的電容值,使元件在速度方面的性能提高,並且可以降低功率的消耗及雜訊干擾。但是隨著多孔低介電常數材料的發展,對其熱穩定性、機械強度、黏著度、漏電流密度…等可靠度問題,都將會遭遇到更多的困難。
本論文將針對多孔低介電常數介電層薄膜做研究,先針對熱穩定性進行探討,而由於材料多孔的特性,造成薄膜穩定度變差,會利用高密度電漿化學氣相沉積系統對薄膜進行電漿處理,再對透過物性、電性的分析探討薄膜特性,希望保持低的介電常數值來做其特性與可靠度的改善。
As ULSI circuits are scaled down to deep submicron regime, the interconnect time delay becomes increasingly dominant over intrinsic gate delay and the speed of the devices is limited. To reduce the RC delay time, using copper interconnects and many low dielectric constant materials have been developed to reduce the capacitance between line and line. So the speed of devices operation will be increased and improved power consumption and cross-talk. However, as porous low-k materials development, the fabrication process will come up many challenges, such as, thermal stability, machine strength, adhesion, leakage current…etc.
In this thesis, the characteristics of porous low-k materials dielectric film will be investigated. First, thermal stability of low-k film will be discussion. Second, due to material it porous property, the film stability becoming worse, then, will be using high density plasma chemical vapor deposition plasma treatment low-k film. And analyze material and electrical property of the film. The research improve not only material itself property, but also it would try to find out better K value to keep the excellent low-k value.
誌謝--------------------------------------------------------------------------I
中文摘要------------------------------------------------------------------III
英文摘要------------------------------------------------------------------IV
圖目錄---------------------------------------------------------------------IX
表目錄--------------------------------------------------------------------XII
第一章 緒論---------------------------------------------------------------1
1.1 研究背景--------------------------------------------------------------1
1.1.1 積體電路後段製程發展------------------------------------------1
1.1.2 電阻-電容延遲時間-----------------------------------------------4
1.1.3 低介電常數材料發展---------------------------------------------5
1.1.3.1 旋塗式之實心低介電常數層----------------------------------7
1.1.3.2 化學氣相沉積之實心低介電常數層-------------------------10
1.1.3.3 奈米孔洞二氧化矽薄膜----------------------------------------11
1.1.4 低介電常數材料特性---------------------------------------------13
1.2 研究動機--------------------------------------------------------------14
1.3 論文組織架構--------------------------------------------------------15
第二章 氨電漿處理對低介電常數多孔薄膜的影響---------------17
2.1 簡介--------------------------------------------------------------------17
2.1.1 溶膠-凝膠(Sol-Gel)原理------------------------------------------17
2.1.2 電漿技術簡介-------------------------------------------------------19
2.2 實驗步驟---------------------------------------------------------------21
2.2.1 試片準備-------------------------------------------------------------21
2.2.2 溶液調配與實驗製程----------------------------------------------22
2.2.2.1 不同溫度熱處理的低介電常數多孔薄膜--------------------22
2.2.2.2 未電漿處理的低介電常數多孔薄膜--------------------------22
2.2.2.3 氨電漿處理的低介電常數多孔薄膜--------------------------23
2.3 特性分析----------------------------------------------------------------23
2.3.1 電性分析--------------------------------------------------------------23
2.3.1.1 C-V 特性分析------------------------------------------------------23
2.3.1.2 I-V 特性分析-------------------------------------------------------24
2.3.2 物性分析----------------------------------------------------------------24
2.3.2.1 掃瞄式電子顯微鏡(SEM)------------------------------------------24
2.3.2.2 傅利葉轉換紅外線光譜儀(FTIR) --------------------------------25
2.3.2.3 歐傑電子顯微鏡(AES)及化學分析電子儀(ESCA)------------26
2.4 結果與討論----------------------------------------------------------------27
2.4.1 不同熱處理溫度對超低介電常數多孔薄膜的影響--------------27
2.4.2 氨電漿處理與否對其長時間放置K 值變化---------------------27
2.5 結論-------------------------------------------------------------------------28
第三章 不同電漿與不同處理時間對低介電常數多孔薄膜的影響--39
3.1 簡介-------------------------------------------------------------------------39
3.2 實驗步驟-------------------------------------------------------------------39
3.2.1 試片準備-----------------------------------------------------------------39
3.2.2 溶液調配與實驗製程--------------------------------------------------40
3.2.2.1 未電漿處理的低介電常數多孔薄膜------------------------------40
3.2.2.2 不同電漿與不同處理時間的低介電常數多孔薄膜------------40
3.3 特性分析--------------------------------------------------------------------41
3.3.1 電性分析------------------------------------------------------------------41
3.3.1.1 C-V 特性分析----------------------------------------------------------41
3.3.1.2 I-V 特性分析-----------------------------------------------------------41
3.3.2 物性分析------------------------------------------------------------------42
3.3.2.1 掃瞄式電子顯微鏡(SEM)-------------------------------------------42
3.3.2.2 奈米壓痕儀(Nano-indentation system)----------------------------43
3.3.2.3 原子力顯微鏡(AFM) ------------------------------------------------43
3.4 結果與討論----------------------------------------------------------------44
3.4.1 電性分析-----------------------------------------------------------------44
3.4.2 表面粗糙度分析--------------------------------------------------------45
3.4.3 薄膜硬度分析-----------------------------------------------------------46
3.4.4 K 值變化-----------------------------------------------------------------47
3.5 結論-------------------------------------------------------------------------48
第四章 總結--------------------------------------------------------------------63
參考文獻-------------------------------------------------------------------------64
[1]S. Bothra, B. Rogers, M. Kellam, IEEE Transactions on Electr. Dev., 40, 591 (1993).
[2]T. Homma, Mater. Sci. Eng., 23, 243 (1998).
[3]D. Edelstein et al., Tech. Dig. 376 (1997).
[4]Havemenn, R. H., Low-Dielectric Constant Material IV, MRS Symp. Proc., 511, 3-14 (1998).
[5]International Technology Roadmap for Semiconductors (ITRS), 2007 edition (http://www.itrs.net/reports.html)
[6]P.S Ho, ”low k Dielectrics For Submicron Interconnect Applications”, Low k tutorial Taiwan, May 2000.
[7]T.Ida, M. Rossnegal and D. Mika lsen, J.Vac, Sci. Technology A-9.261 (1991).
[8]T.Sakurai, IEEE Trans. Electron Device, 40 ,118 (1993).
[9]H. Landies, P. Burke, W. Cote, W. Hill, and C. Hoffman, Thin Solid Films, vol. 220, p.1, 1991.
[10]D. Parmanik, “Integrating dielectrics into sub-half-micron multilevel metallization circuits”, Solid state technol., p.69, 1995.
[11]D. Sylvester, Hu Chenming, and O. S. Nakagawa, VLSI Technology Symposium, pp.42-43, 1998.
[12]P. Atkins and J. de Paula, Atkins’ Physical Chemistry, 7th ed. (Oxford University Press, New York, 2002).
[13]S. O. Kasap, Principles of Electrical Engineering Materials and Devices (McGraw-Hill, New York, 1997), Chap. 7.
[14]K. J. Miller, H. B. Hollinger, J. Grebowicz, and B. Wunderlich, Macromolecules, 23, 3855 (1990).
[15]陳耀騰,低介電材料簡介,塑膠資訊,專題報導,1-9頁,民國88年。
[16]N. P. Hacker, J. S. Drage, VMIC Conference, p. 138 (1995).
[17]Joanne Y. Chee, James S. Drage, VMIC Conference, p. 128 (1995).
[18]M. E. Mills, P. Townsend, D. Castillo, S. Martin, and A.Achen, Microelectron. Eng., 33, 327 (1997).
[19]Mckerrow, A. and Ho, P., In Low Dielectric Constant Materials and Interconnects Workshop Proc., 199, (1996).
[20]R. N. Vrtis, K. A. Heap, W. F. Burgoyne, L. M. Robeson, VLSI Multilevel Interconnection Conference, p.620, 1997.
[21]S. C. Sun and Y. C. Chuang, VLSI Multilevel Interconnection Conference, p. 113 (1996).
[22]顧子琨,電子月刊,第五期第六卷,117-133頁,民國88年。
[23]Tetsuo Matsuda, M. J. Shapiro, DUMIC Conference, p. 22 (1995).
[24]Takashi Fukada, Takashi Akahori, International Conference on solid State Devices and Materials, p.158 (1993).
[25]Y. J. Mei, T. C. Chang, S. J. Chang, Thin Solid Films 308-309, 501 (1997).
[26]H. Y, T. Hayashi, Appl. Phys. Lett., 72, 21 (1998).
[27]D. Chao, P. Yang, N. Melosh, J. Feng, F. Chmelka, G. D. Stucky, Adv. Mater., 10, 1380 (1998).
[28]M. Antonietti , B. Berton , C. Goltner , H. P. Hentze, Adv. Mater, (1997).
[29]陳麗梅,多孔低介電常數材料,電子月刊,第七期第四卷,130-137頁。
[30]D. Zhao, P. Yang, N. Melosh, J. Feng, B. F. Chmelka, G. D. Stucky, Adv. Mater., 10, 1380 (1998).
[31]Y. Lu, R. Ganguli, C. A. Drewien, M. T. Anderson, C. J. Brinker, W. Gong, Y. Guo, H. Soyez, B. Dunn, M. H. Huang, J. I. Zink, Nature, 389, 364 (1997).
[32]S. S. Prakash, C. J. Brinker, A. J. Hurd, J. Non-Cryst. Solids, 190, 264 (1995).
[33]C. M. Jin, J. D. Luttmer, D. M. Smith, T.A. Ramos, MRS Bull, 22(10), 39 (1997).
[34]D. M. Smith, J. Anderson, C. C. Cho, G. P.Johnston, S. P. Jeng, Mater. Res. Soc. Symp. Proc., 381, 261 (1995).
[35]H. S. Yang, S. Y. Choi, S. H. Hyun, H. H. Park, J. K. Hong, J. Non-Cryst. Solids, 221, 151 (1997).
[36]楊正杰,張鼎張,鄭晃忠,”銅金屬與低介電材質與製程”,毫微米通訊,第七卷第四期。
[37]T. C. Chang, Y. S. Mor, P. T. Liu, T. M. Tsai, C. W. Chen, Y. J. Mei
and S. M. Sze, Journal of The Electrochemical Society, F81-F84 (2002).
[38]Y. H. Wangz and R. Kumar, Journal of The Electrochemical Society, 151 F73-F76 (2004).
[39]A. Gouldstone, H. J. Koh, K. Y. Zeng, A. E. Giannakopoulos, and S. Suresh, ActaMater., 48, 2277 (2000).
[40]S. Y. Chang, T. K. Chang, and Y. S. Lee, J. Electrochem. Soc., 152, C657 (2005).
[41]Hua-Gen Peng, Dong-Zhi Chi, Wei-De Wang, Jing-Hui Li, Kai-Yang Zeng, Richard S. Vallery, William E. Frieze, Mark A. Skalsey, David W. Gidley and Albert F. Yee, Journal of The Electrochemical Society, 154, G85-G94 (2007).
[42]A. M. Urbanowicz, M. R. Baklanov, J. Heijlen, Y. Travaly, and
A. Cockburnb, Electrochemical and Solid State Letters, 10, G76-G79 (2007).
[43]Hung-Chun Tsai , Yee-Shyi Chang , Shou-Yi Chang , Microelectronic Engineering 85, 1658-1663(2008).
[44]Shou-Yi Chang,a, Jien-Yi Chang, Su-Jien Lin,b, Hung-Chun Tsai, andYee-Shyi Chang, Journal of The Electrochemical Society, 155, G39-G43 (2008).
[45]C. J. Brinker, Y. Lu, H. Fan, and C.S. Sriram, Abstracts of the 1999 MRS Spring Meeting, April 5-9, p. 237.
[46]S. Baskaran, J. Liu, K. Domansky, X. Li, N. Kohler, G. Fryxell, S. Thevuthasen and R.E. Williford, ibid, p.237.
[47]C. J. Brinker, Y. Lu, A. Sellinger, and H. Fan, Adv. Mater., 11, 579 (1999).
[48]C. J. Brinker and G. W. Scherer, Sol-gel Science (Academic Press, San Diego, 1990).
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