臺灣博碩士論文加值系統

本研究利用有機金屬化學氣相沉積技術，成長具側邊n型調制摻雜（Modulation-Doped；MD）位障層多量子井磷化鋁鎵銦發光二極體，並探討其元件電流電壓、電致發光及壽命等光電特性。實驗中發現，在直流20毫安培下，具側邊n型調制摻雜位障層之多量子井磷化鋁鎵銦發光二極體之導通電壓(2.003 V)雖然比傳統發光二極體(2.037 V)要小，但輸出功率(7.09 mW)卻比傳統發光二極體(7.93 mW)要低。推測造成此現象的原因，可能是因為過度的調制摻雜造成深位缺陷，形成了非復合中心，而導致漏電流的產生，降低了光輸出功率。此現象提醒我們，如要利用調制摻雜技術來增加複合載子的供應時，此不適當的摻雜造成深位缺陷的問題應加以克服。也就是說，雖然文獻記載調制摻雜技術可改善發光二極體發光特性，但在提供載子濃度(即摻雜濃度)與造成缺陷的效應上要取得一平衡點。

The AlGaInP multiquantum-well (MQW) light-emitting diodes (LEDs) with a modulation-doped (MD) side barrier (SB) structure was grown by metal-organic chemical vapor deposition (MOCVD). The characterisitcs of MD-SB LEDs were evaluated by scanning electron microscopy (SEM), double crystal X-ray diffractometer (DCXRD), secondary ion mass spectrometer (SIMS), photoluminescence (PL) measurement, output power measurement and life test. It was found that the MD-SB LEDs exhibited a lower cut-in voltage (2.003V), and lower output power (7.09mW) than conventional LEDs (2.037V, 7.93mW) at 20mA. This output power degradation can be attributed to the over doping of MD-SB structure since this over doping can induce more defects than the conventional LED. Although the MD LED can supply a higher electron concentration than in the conventional structure. There is trade-off between carrier supply and defect inducement.

中文摘要Ⅰ
英文摘要Ⅱ
誌謝Ⅲ
圖表索引Ⅳ
目錄Ⅴ
第一章 緒論1
1-1 發光二極體元件概述1
1-2 發光二極體發光原理2
1-3 研究動機4
第二章 實驗設備與儀器6
2-1 有機金屬化學氣相磊晶系統6
2-1-1 有機金屬氣相磊晶法之理論簡介7
2-1-2 有機金屬化學氣相磊晶系統簡介9
2-2 實驗中所使用的反應物性質10
2-3 實驗中磊晶的環境11
2-4 掃描式電子顯微鏡(SEM)12
2-5 X光繞射分析(XRD)13
2-6 光激發光譜儀(PL)13
第三章 實驗製程15
3-1 調制摻雜技術簡介15
3-2 元件研製步驟17
第四章 實驗結果與討論25
4-1 磊晶結構觀察25
4-1-1 雙晶格X射線繞射儀量測分析25
4-1-2 SEM量測25
4-2 冷光激發光譜分析26
4-3 元件之電壓-電流特性分析26
4-4 元件之輸出功率-電流特性分析27
4-5 元件之壽命測試27
第五章 總結及未來工作29
5-1 總結29
5-2 未來工作29
參考文獻46
圖1-1 未加偏壓之同質p-n接面能帶圖32
圖1-2 未加偏壓之同質接面能帶圖32
圖1-3 未加偏壓之雙異質接面能帶圖33
圖1-4 加順向偏壓之同質接面能帶圖33
圖1-5 具側邊n型調制摻雜位障層LED能帶圖34
圖2-1 有機金屬氣相磊晶法成長機制概述圖34
圖2-2 有機金屬氣相磊晶系統簡圖35
圖2-3 氣體傳輸系統實圖35
圖2-4 質流控制器(MFC)實圖36
圖2-5 Bubbler瓶實體圖36
圖2-6 磊晶反應腔實體圖37
圖2-7 RF Induction Heating管實體圖37
圖2-8 Control Computer介面圖38
圖2-9 磊晶速率與溫度關係圖38
圖2-10 PL系統測試流程圖39
圖3-1 異質結構中的二維電子氣系統39
圖3-2(a) 側邊n型調制摻雜位障層LED能帶圖40
圖3-2(b) 側邊n型調制摻雜位障層LED結構圖40
圖4-1 磷化鋁鎵銦發光二極體之DCXRD圖41
圖4-2(a) 未調制摻雜磷化鋁鎵銦發光二極體SEM側壁觀察41
圖4-2(b) 側邊n型調制摻雜磷化鋁鎵銦發光二極體SEM側壁觀察42
圖4-3(a) 未調制摻雜室溫冷光激發光譜42
圖4-3(b) 側邊n型調制摻雜室溫冷光激發光譜43
圖4-4 LED電流-電壓與動態電阻特性圖43
圖4-5 LED輸出功率與效率特性圖44
圖4-6 順偏下輻射復合與非輻射復合示意圖44
圖4-7(a) 室溫50mA光輸出壽命測試圖45
圖4-7(b) 室溫50mA電壓壽命測試圖45
圖4-7(c) 室溫50mA漏電流壽命測試圖46
表1.1 應用於不同波長之各式分散式布拉格反射鏡(DBR)46

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