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研究生:陳世偉
研究生(外文):Shih-Wei Chen
論文名稱:應用於802.16d之Q增強疊接式壓控振盪器與四相位壓控振盪器設計
論文名稱(外文):Cascode CMOS VCO/QVCO With Q-Enhancement Technology Designed for 802.16d Application
指導教授:陳凰美
指導教授(外文):Hwan-Mei Chen
學位類別:碩士
校院名稱:龍華科技大學
系所名稱:電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:139
中文關鍵詞:LC-Tank交叉耦合壓控振盪器四相位壓控振盪器高效能
外文關鍵詞:Complementary cross-coupledLow phase noiseVCOQVCOQ-Enhancement
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本論文探討射頻積體電路壓控振盪器之設計,其基本架構為互補式交叉耦合對壓控振盪器,並使用Q增強疊接交叉耦合技術來改良其架構與效能,再利用Q增強疊接壓控振盪器設計出四相位壓控振盪器,最後使用ADS模擬軟體來模擬,以TSMC 0.18-μm 1P6M CMOS製程來實現。
This paper presents the designing of integrated circuit radio frequency voltage controlled oscillators. Improving the structure and performances of complementary cross-coupled VCO, the circuits are designed with the Q-Enhancement Cascode complementary cross-coupled technique, simulated with ADS, and fabricated using TSMC 0.18-μm 1P6M CMOS process.
中文摘要 i
英文摘要 iii
誌謝 v
目錄 vi
表目錄 viii
圖目錄 ix
第一章 序論 1
1.1 研究背景及現況 1
1.2 研究動機與目的 2
1.3 IEEE802.16簡介 2
1.4 論文內容架構 4
第二章 振盪器原理、架構與設計考量 6
2.1 振盪器的應用 6
2.2 振盪器的原理 7
2.2.1 回授式 7
2.2.2 反射式 8
2.2.3 阻抗轉換 12
2.3 CMOS 壓控振盪器架構 15
2.3.1 環型振盪器 16
2.3.2 LC Tank 振盪器 17
2.3.3 考畢子與哈特萊振盪器 21
2.4 品質因素對振盪器的影響 23
2.5 振盪器的性能參數及設計考量 26
第三章 被動元件特性介紹 34
3.1 積體化之電感簡介 34
3.1.1 螺旋式電感等效電路模型與寄生效應 36
3.1.2 CMOS 製程的電感損耗型態 40
3.1.3 電感之品質因素 44
3.2 可變電容簡介 45
3.2.1 二極體可變電容 46
3.2.2 MOS 可變電容 50
第四章 相位雜訊 60
4.1 相位雜訊的定義 66
4.2 相位雜訊對通訊系統的影響 68
4.3 壓控振盪器的相位雜訊 70
4.3.1 非時變模型(time invariant model) 70
4.3.2 時變模型(time variant model) 73
4.4 抑制相味雜訊的方法 79
第五章 Q 增強疊接式壓控振盪器設計 86
5.1 應用於802.16d 之8GHz 寬頻帶高效能Q 增強疊接式壓控振盪 86
5.1.1 電路架構與設計原理 86
5.1.2 電路架構特性模擬比較 92
5.1.3 電路設計流程 93
5.1.4 模擬結果 94
5.1.5 量測結果 98
5.1.6 結論 102
5.2 應用於802.16d 之7.4GHz 低相位雜訊寬頻帶Q 增強型疊接式四相
位壓控振盪器 104
5.2.1 電路架構與設計原理 104
5.2.2 正交輸出的方法 104
5.2.3 電路架構特性模擬比較 109
5.2.4 模擬結果 110
5.2.5 量測結果 114
5.2.6 QVCO 相位誤差量測結果 119
5.2.7 結論 122
第六章 結論 125
第一章參考文獻
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Vol.54,pp.329-330,Feb.1966.
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第四章參考文獻
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Edition, 2001.
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edition, Cambridge, 2004.
[3] Behzad Razavi, RF Microtronics, Prentice Hall PTR, 1998.
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McGraw-Hill, 2001.
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