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研究生:廖同堅
研究生(外文):Tung-chien Liao
論文名稱:製備GZO透明導電膜之研究
論文名稱(外文):Preparation of ZnO:Ga transparent conductingoxide thin films at room temperature
指導教授:許春耀許春耀引用關係
學位類別:碩士
校院名稱:龍華科技大學
系所名稱:工程技術研究所
學門:工程學門
學類:綜合工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:59
中文關鍵詞:氧化鋅灰關聯分析中介層透明導電膜
外文關鍵詞:Zinc oxideBuffer layerTransparent conductive oxideGrey relational
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利用RF 磁控濺鍍,在室溫下沉積氧化鋅鎵(ZnO/Ga;97/3 wt%;簡稱GZO)
薄膜於玻璃基板 (Corning 1737 Glass),形成用途廣泛的透明導電膜,應用田
口實驗規劃及變異數分析,觀察不同濺鍍參數(濺鍍功率、製程壓力、氬氧比
例、濺鍍時間) 對GZO 透明導電膜的影響。經灰關聯分析,顯示電阻率由
9.23×10-3 為降低至5.77×10-3 Ω-cm,可見光穿透率由79.42 提昇至82.95 %。於
GZO 薄膜添加ZnO 中介層,其電阻率由5.77×10-3 降低到2.38×10-3Ω‧cm,但
是對可見光穿透率影響不大。接下來研究方向可以利用低溫電漿之特性,在室
溫下沉積透明導電膜於高分子基板,應用於可撓性光電元件。
Gallium-doped zinc oxide films have been grown on glass substrates with
and without ZnO buffer layers by r.f. magnetron sputtering at room temperature. In
this approach, the grey relational Taguchi method analysis is adopted to solve the
coating process with multiple deposition qualities. Optimal coating parameters can
then be determined by the gray relational grade as the performance index. The
GZO coating parameters (r.f. power, sputtering pressure, O2/(Ar+O2) flow-rate
ratios, and deposition time) are optimized by taking into account the multiple
performance characteristics (structural, morphological, deposition rate, electrical
resistivity, and optical transmittance). The results indicate that with grey relational
Taguchi method the electrical resistivity of GZO films is reduced from 9.23×10-3 to
5.77×10-3 Ω-cm and optical transmittance increases from 79.42 to 82.95 %,
respectively. The ZnO buffer layer can reduce the electrical resistivity of GZO
films from 5.77×10-3 to 2.38×10-3 Ω-cm. It can be anticipated that the room
temperature deposition enables these films deposition onto polymeric substrates for
flexible optoelectronic devices.
中文摘要 i
英文摘要 ii
致謝 iii
目錄 iv
表目錄 vii
圖目錄 viii
第一章 緒論 1
1.1 前言與研究背景 1
1.2 研究動機 2
1.3 研究目的 3
第二章 實驗相關理論與文獻回顧 4
2.1 氧化鋅薄膜 4
2.1.1 氧化鋅薄膜晶體結構 4
2.1.2 氧化鋅薄膜電學性質 5
2.1.3 氧化鋅薄膜光學性質 5
2.1.4 氧化鋅薄膜製備方法 6
2.2 射頻濺鍍 7
2.3 磁控濺鍍 8
2.4 薄膜成長理論 9
2.5 田口式實驗規劃法 11
2.5.1 因子的種類 12
2.5.2 數據分析 13
2.6 灰關聯分析 16
第三章 實驗方法與步驟 18
3.1 實驗流程 18
3.2 實驗規劃 18
3.3 實驗材料 20
3.3.1 靶材 20
3.3.2 基板 20
3.3.3 工作氣體 20
3.4 實驗設備 21
3.5 實驗步驟 23
3.5.1 基板前處理 23
3.5.2 薄膜濺鍍步驟 24
3.6 鍍層分析及量測 24
3.6.1 膜厚量測 24
3.6.2 薄膜電性量測 25
3.6.3 薄膜結構分析 26
3.6.4 薄膜表面分析 26
3.6.5 薄膜光穿透率分析 27
第四章 結果與討論 28
4.1 薄膜沉積速率 28
4.1.1 射頻功率對薄膜沉積速率之影響 30
4.1.2 製程壓力對薄膜沉積速率之影響 31
4.1.3 氬氧比例對薄膜沉積速率之影響 31
4.2 薄膜電性分析 31
4.2.1 射頻功率對薄膜電阻率之影響 33
4.2.2 製程壓力對薄膜電阻率之影響 35
4.2.3 氬氧比例對薄膜電阻率之影響 37
4.2.4 鍍膜時間對薄膜電阻率之影響 39
4.3 薄膜光學性質分析 41
4.3.1 射頻功率對薄膜光穿透率之影響 43
4.3.2 製程壓力對薄膜光穿透率之影響 44
4.3.3 氬氧比例對薄膜光穿透率之影響 44
4.3.4 鍍膜時間對薄膜光穿透率之影響 44
4.4 灰關聯分析與應證實驗 44
4.4.1 灰關聯分析 45
4.4.2 應證實驗 48
4.5 中介層對GZO的影響 51
第五章 結論 54
參考文獻 55
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