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研究生:郭姵妏
研究生(外文):Pei-Wen Kuo
論文名稱:氧化亞銅與氧化亞銅/銀/氧化亞銅薄膜之光電性質
論文名稱(外文):Optical and electrical properties of Cu2O and Cu2O/Ag/Cu2O thin films
指導教授:吳威德吳威德引用關係
學位類別:碩士
校院名稱:國立中興大學
系所名稱:材料科學與工程學系所
學門:工程學門
學類:綜合工程學類
論文種類:學術論文
畢業學年度:97
語文別:中文
論文頁數:68
中文關鍵詞:氧化亞銅/銀/氧化亞銅薄膜快速退火系統穿透率吸收率電漿子共振光誘導電流
外文關鍵詞:Cu2O/Ag/Cu2O filmsRTAtransmittanceabsorptionplasmon resonance
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以直流磁控濺鍍在玻璃基板上分別沉積氧化亞銅(Cu2O)及氧化亞銅/銀/氧化亞銅(Cu2O/Ag/Cu2O;CAC)多層薄膜。控制銀在CAC薄膜間的厚度,分別為3、5、10nm。沉積完成後的一些試片,利用快速退火系統(RTA)製備出CAC-DA及CAC-AD兩種製程之試片。並利用Ag/Cu2O(AC)薄膜來研究銀在氬氣氣氛下經過熱處理後的團聚效應。以X光繞射儀及場發射電子顯微鏡證明銀能形成奈米顆粒存在於薄膜界面中。利用紫外光-可見光-遠紅外光光譜儀、霍爾量測系統、I-V量測系統分析所有試片的電性、光學性質及光電性質。

從實驗結果顯示2維的銀薄膜經過退火處理後由於銀具有高的表面張力能轉換成許多獨立的奈米顆粒。CAC薄膜,在可見光範圍的穿透率及電阻率隨著銀薄膜的厚度增加而降低。CAC-DA隨著退火溫度的增高,吸收率及光誘導電流產生率降低,可能是銀顆粒隨著退火溫度升高而變大的趨勢所造成。CAC-DA及CAC-AD皆可以有效的提升Cu2O薄膜在紅光及紅外光範圍的吸收。然而,CAC-AD薄膜所增加的吸收無法有效的轉為光電流的產生,有可能是因為銀顆粒的尺寸過大形成了原子晶格振動吸收而產生聲子輸出。
Cu2O and two types of Cu2O-Ag-Cu2O (CAC) multilayered thin films were deposited on glass substrates using DC-magnetron sputtering. For CAC films, the mass thickness of Ag layer was controlled at 3, 5, 10nm. After deposition, some of these films were annealed using a rapid thermal annealing (RTA) system at 450oC~ 650 oC, in order to create embedded Ag particles. AC films were used to study the clustering effect of Ag in Ar atmosphere, as well as for forming the 2nd type of CAC(CAC-DA and CAC-AD) film by covering another Cu2O layer on the annealed AC structure. A XRD (X-ray Diffraction) and FE-SEM (Field–Emission Scanning Electron Mircoscopy) were applied to examine the Ag nano-particles on the interface of these films. A UV-VIS-NIR photometer, a Hall measurement system, and a I-V measurement system were used to characterize the optical and electrical properties of these films with and without RTA.

The results show that 2-dimensional Ag layer can transform into many individual particles due to its high surface tension at annealing temperature, no matter when the annealing was carried out. For CAC films, without annealing, the optical transmission and the resistivity are decreased with the inserted Ag-layer. After annealing, both the transmission and resistivity are increased, possibly due to the clustering effect of Ag layer. Most importantly, it is found that the embedded Ag particles can increase the light absorption in the NIR-IR region, which can increase photo-induce current.
摘 要 I
ABSTRACT II
總目錄 III
圖目錄 V
表目錄 VII
第一章 緒論 1
1-1前言 1
1-2研究動機及目的 1
第二章 文獻回顧 3
2-1 濺鍍原理 3
2-1.1 電漿理論 4
2-1.2 磁控濺鍍原理 5
2-2 薄膜成長理論 7
2-3 氧化亞銅之特性 9
2-4奈米金屬顆粒之特性 10
第三章 實驗步驟與儀器設備介紹 13
3-1 實驗流程 13
3-2 實驗材料 15
3-3 基材準備 15
3-4 氧化亞銅及氧化亞銅/銀/氧化亞銅之多層膜薄膜製程 16
3-4.1 鍍膜系統 16
3-4.2 快速退火系統 17
3-4.3 實驗步驟及參數 18
3-5 薄膜特性分析 22
3-5.1 表面形貌及微結構分析 22
1. 表面輪廓量測儀 (α-step ) 22
2. X光繞射儀 ( X-Ray Diffraction ) 22
3. 場發射電子顯微鏡 (Field-emission Scanning Electron Microscope ) 23
4. 原子力顯微鏡 (Atomic Force Microscope) 24
3-5.2 電性分析 25
1. 電阻率量測 25
2. 自由載子及載子遷移率量測 26
3-5.3 光學性質分析 28
1. 紫外光-可見光-遠紅外光光譜儀 ( UV-VIS-NIR Spectrometer ) 28
3-5.4 光電性質分析 29
1. 光誘導電流 (Photoinduce current) 29
第四章 結果與討論 31
4-1 氧化亞銅薄膜性質 31
4-1.1 晶體結構分析 31
4-1.2 電性分析 35
4-1.3 光學性質 37
4-2 氧化亞銅/銀/氧化亞銅多層膜薄膜性質 40
4-2.1 CAC及CAC-DA薄膜 40
結構分析 40
電性分析 42
光學性質分析 44
光電性質分析 46
4-2.2 CAC-AD薄膜 50
結構分析 50
光學性質分析 53
電性分析 54
光電性分析 55
第五章 結論 57
參考文獻 58
附錄 62
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