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研究生:邱久容
研究生(外文):Chiu-Jung Chiu
論文名稱:低電壓氧化物半導體a-IGZO與高分子介電層薄膜電晶體
論文名稱(外文):Low-Voltage a-IGZO TFT with Polymer Dielectric Layer
指導教授:裴靜偉
學位類別:碩士
校院名稱:國立中興大學
系所名稱:電機工程學系所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:97
語文別:中文
論文頁數:51
中文關鍵詞:非晶氧化物半導體薄膜電晶體
外文關鍵詞:amorphous oxide semiconductorTFT
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在這篇論文中,我們介紹操作在低電壓下氧化物半導體a-IGZO與共聚物介電層薄膜電晶體。本實驗以bottom gate的結構,在玻璃基板上製作,以旋轉塗佈技術製作高分子閘極氧化層,並以濺鍍方式在室溫下沉積a-IGZO半導體層。PVP薄膜和PVP加上a-IGZO薄膜的光穿透率皆達到80%,適合應用在軟性電子。未退火之前得到電子遷移率為3.4cm2/V-S,臨界電壓-0.8V,電流開關比10,次臨界擺幅3.29V/dec,利用後製程中的熱退火方式,得到電子遷移率為18cm2/V-S,臨界電壓2V,電流開關比103,次臨界擺幅3V/dec,使用高分子材料的絕緣層,讓我們的臨界電壓只有2V,電流到達飽和的臨界電壓也只需10V,所以利用高分子材料的絕緣層確實可以使操作電壓和臨界電壓降低,使用熱退火可以使元件性能提升。
In this study, we report a low voltage drived amorphous indium gallium zinc oxide (a-IGZO) thin film transistor with polymer dielectric. The device was fabricated on glass substrate with a bottom gate structure. The poly(4-vinyl phenol) (PVP) thin film was used as the polymer gate dielectric by spin coating. For active layer, a-IGZO was then deposited by rf-magnetron sputtering at room temperature.
The optical transmissions of single PVP film and PVP/IGZO stack layers are both as high as 80%. Therefore, PVP and a-IGZO are suitable for insulator and active layer of transparent flexible devices. Before thermal annealing, the TFT exhibit a mobility of 3.4cm2/Vs, a threshold voltage of -0.8V, on-off ratio of 10, a subthreshold swing of 3.29V/decade. After thermal annealing, the mobility and subthreshold swing of the devices are significantly improved. The TFT exhibited with a mobility of 18 cm2/Vs, threshold voltage of 2V, on-off ratio of 103 and subthreshold swing of 3V/decade. The operating voltage was as low as 10V. The polymer gate dielectric of PVP ensure a low operating voltage and threshold voltage for the a-IGZO TFT.
誌謝辭 I
中文摘要 II
Abstract III
圖目次 IV
表目次 VI
第一章 研究動機 1
1.1 軟性電子簡介 1
1.2 TFT薄膜電晶體簡介 2
1.2.1氫化非晶矽薄膜電晶體(a-Si:H) ...3
1.2.2有機半導體 ...4
1.2.3 ZnO半導體 ...4
1.3 a-IGZO與共聚物介電層薄膜電晶體之研究動機 .5
第二章 文獻回顧 ..6
2.1非晶氧化物InGaZnO4(a-IGZO)介紹 6
2.2 非晶氧化物InGaZnO4(a-IGZO)薄膜電晶體應用 11
2.3 閘極介電層高分子共聚物,Poly(4-Vinyl phenol) (PVP)應用 12
2.4 元件重要參數: 14
2.4.1載子遷移率(mobility) 14
2.4.2臨界電壓Threshold voltage(VT): 15
2.4.3電流開關比Ion/ Ioff 比: 15
2.4.4 次臨界擺幅(Subthreshold swing (s.s.)): 15
第三章 實驗方法和設計 17
3.1 a-IGZO薄膜電晶體製作流程 17
3.1.1光罩(shadow mask)製作方法 18
3.1.2 poly-(4-vinyl phenol) (PVP)調藥的步驟 19
3.3 a-IGZO薄膜製作 20
3.3.1 濺鍍系統 .20
3.4 電極的製作流程 22
3.4.1 熱蒸鍍系統 22
3.5 量測分析 23
第四章 結果與討論 24
4.1 a-IGZO沉積參數 24
4.1.1 射頻功率之影響 24
4.1.2 工作壓力之影響 25
4.1.3 氧分壓之影響 25
4.2 微結構分析 25

4.2.1光學性質量測 26
4.3 PVP漏電流 27
4.4元件型態及圖解 28
4.5元件電性量測 29
4.5.1 IDS-VDS特性量測 29
4.5.2 IDS-VGS特性量測 38
第五章 總結 46
第六章 未來展望 48
參考文獻 49
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