臺灣博碩士論文加值系統

本論文中，我們成功地以低壓有機金屬化學汽相沉積法(LP-MOCVD)研製以磷化鋁鎵銦(AlGaInP)材料系統為基礎之發光二極體(LEDs)。吾人將提出三項關於磷化鋁鎵銦系發光二極體亮度提升及製程改善之研究，量測並討論其光與電特性之改善成果；另外，並將針對兩種以砷化鎵(GaAs)材料系統為基礎之光電開關元件深入探討其操作原理與應用。
於磷化鋁鎵銦發光二極體的研究範疇中，首先我們提出以n型調變摻雜(modulation doped)位障層於磷化鋁鎵銦發光二極體多重量子井中，經由更多電子注入，增加電子捕捉率，提高光輸出效率。經由此n型調變摻雜，光流明效率在20毫安培注入電流下可提升10.7%；在相同範圍的注入電流測試中，亦可以發現此n型調變摻雜位障層磷化鋁鎵銦發光二極體存在較小波長變化量與較低的接面溫度變異結果，而元件可靠度衰減程度幾乎與未摻雜元件相同。
其次，我們研究不同種類表面歐姆接觸層對氧化銦錫(ITO)電流擴散層於磷化鎵窗層上的影響，研究發現經由碳摻雜磷化鎵歐姆接觸層相較於習知p型砷化鎵歐姆接觸層，於20毫安培操作下，元件輸出功率可提升11%。第三個研究為一種具有直接歐姆接觸在p型磷化鎵窗層與氧化銦錫界面的製程方法，於本研究中並無習知砷化鎵歐姆接觸層的存在，我們利用金/金鈹金屬藉由熱退火程序，使其金鈹原子在磷化鎵窗層表面形成具金屬特性之薄膜層，降低磷化鎵與氧化銦錫接觸產生之接面能障；另外，該元件在氧化銦錫直接歐姆接觸於磷化鎵窗層下，除亮度具明顯提升外，在稍大電流(20毫安培)元件可靠度測試下，亦未有明顯衰減情形發生。
另一方面，本文亦將研究一種具有寬能隙集極結構與具有射極薄化結構之異質接面雙極性電晶體式之光電開關元件，此兩種元件結構主要為由砷化鋁鎵/砷化鎵材料所組成，經由不同的結構設計與製程改善方法，該兩種元件均具有優異之開關元件特性要求表現—如高交換電壓(switching voltage)、保持電壓(holding voltage)、保持電流(holding current)及低的交換電流(switching current)，這是由於元件操作在順向偏壓之下，因為電子電洞對正回授效應導致元件發生累增崩潰因而產生負微分電阻現象所致；此外，該元件也同時具有良好之雙極性電晶體特性。

In this dissertation, we have successfully fabricated and demonstrated AlGaInP-based light-emitting diodes (LEDs). Three approaches related to how to promote the brightness and process method improved for AlGaInP LEDs are presented and discussed. In addition, two GaAs-based optoelectronic switches, a wide-gap collector optoelectronic switch and a double heterostructure-emitter optoelectronic switch with an emitter edge-thinning design are also investigated and discussed.
In respect of research on AlGaInP LEDs, we have proposed an n-type modulation doped (MD) barrier layers on multi-quantum wells (MQWs) to improve luminous efficiency. The MD-MQW structure can provide a larger number of mobile electrons in the well and a smaller electron thermal velocity, in which increases the recombination rate and has the effect of reducing series resistance. Thus, reduction of junction heating in the MQWs is obtained. It was found that the luminous efficiency of the n-type MD-MQW LED improved that of un-doped MQW LED by about 10.7% at an injection current of 20 mA. In addition, the n-type MD-MQW LEDs exhibited a smaller wavelength variation and a smaller junction temperature variation under the same operation current regime. Moreover, the brightness reliability of this MD-MQW LED is found to be comparable to the undoped-MQW LED.
Then, we investigated the effect of different Ohmic contact layer structure applied to ITO-assisted on GaP window layer of AlGaInP LEDs. By selecting the C-doped GaP layer as Ohmic contact layer, the light-output power was significantly increased by a factor of 11% than conventional p-GaAs contact layer structure under DC 20-mA operation. The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.
Two-terminal switching performances are observed in HBTs device with a wide-gap collector and a double heterosturcture-emitter optoelectronic switch, respectively. These two devices consist of AlGaAs/GaAs materials. Through different structural design and process method improvement, these two devices show that increasing of the switching voltage VS, holding voltage VH, holding current IH and the switching current IS decreasing under illumination situation. The switching action takes place from a low current state to a high current state through a region of NDR which is due to the avalanche multiplication process. Furthermore, the switch with an emitter edge-thinning design also exhibits better transistor characteristics.

Chapter 1. Introduction 1
1.1 Brief History of Light-Emitting Diodes (LEDs 1
1.2 Brief History of Heterojunction Bipolar Transistors (HBTs) 2
1.3 Brief History of Negative Differential Resistance (NDR) Devices 4
1.4 Organization of this Dissertation 6

Chapter 2. Epitaxy System and Characterization Instruments 9
2.1 MOCVD Epitaxy System 9
2.1.1 Importance of MOVPE System 10
2.1.2 MOVPE System 10
2.1.3 Mechanism of MOVPE Reaction 12
2.2 Characterization Instruments 14
2.2.1 High resolution x-ray diffraction (HRXRD) 14
2.2.2 Photoluminescence (PL) 16

Chapter 3. Improvement of Optical and Electrical Characteristics in AlGaInP-Based Light-Emitting Diodes (LEDs) 17
3.1 An AlGaInP-Based LED with a Modulation-Doped Multi-Quantum Well (MD-MQW) Structure 18
3.1.1 Motivation 18
3.1.2 Experimental Details 19
3.1.3 Optical and Electrical Characterization 20
3.1.4 Junction Temperature Analysis 23
3.1.5 Reliability 25
3.1.6 Summary 26
3.2 An AlGaInP-Based Multiple-Quantum-Well Light Emitting Diode with a Thin Carbon-Doped GaP Contact Layer Structure 26
3.2.1 Introduction 26
3.2.2 Experimental Details 27
3.2.3 Optical and Electrical Characterization 29
3.2.4 Summary 33
3.3 An AlGaInP-Based Light Emitting Diode with an Indium-Tin-Oxide (ITO) Direct Ohmic Contact Structure 33
3.3.1 Motivation 34
3.3.2 Experimental Details 35
3.3.3 Optical and Electrical Characterization 36
3.3.4 Reliability 39
3.3.5 Summary 41

Chapter 4. Investigation of Optoelectronic Switching Devices Based on Heterostructure Bipolar Transistors (HBTs) 43
4.1 Introduction 43
4.2 Characteristics of an n-p-n Heterostructure Optoelectronic Switch with a Wide-Gap Collector Layer 44
4.2.1 Introduction 44
4.2.2 Device Structure and Material Growth 45
4.2.3 Experimental Results and Discussion 46
4.2.4 Summary 49
4.3 Characteristics of Double Heterostructure-Emitter Bipolar Transistors 50
4.3.1 Introduction 50
4.3.2 Theoretical Considerations and Modeling 51
4.3.3 Experiments 58
4.3.4 Results and Discussion 58
4.3.5 Summary 63

Chapter 5. Conclusions and Prospects 65
5.1 Conclusions 65
5.2 Prospects 67

Bibliography 70

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