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研究生:郭東霖
研究生(外文):Dong-Lin Kuo
論文名稱:全透明氧化鋅薄膜電晶體之研究
論文名稱(外文):Studies of ZnO-Based Transparent Thin-Film Transistor
指導教授:朱聖緣朱聖緣引用關係
指導教授(外文):Sheng-Yuan Chu
學位類別:碩士
校院名稱:國立成功大學
系所名稱:電機工程學系碩博士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:英文
論文頁數:95
中文關鍵詞:氧化鋅磁控濺鍍薄膜電晶體黃光
外文關鍵詞:SputterY2O3TransistorZnO
相關次數:
  • 被引用被引用:0
  • 點閱點閱:295
  • 評分評分:
  • 下載下載:52
  • 收藏至我的研究室書目清單書目收藏:0
摘要
在這篇碩士論文裡,我們使用全黃光、全射頻磁控濺鍍法,製作出增強型N-Type 氧化鋅薄膜電晶體。我們利用高介電常數材料--氧化釔做為我們的介電層,期待元件能操作在較低的操作電壓並且存在較小閘極漏電流。
在第四章實驗的部分,我們將分別討論氧化鋅薄膜的特性與元件結構上的變異對於元件整體電性的影響,並利用XRD、AFM、SEM/EDS、C-V and I-V measurements等量測方式對薄膜或元件進行分析﹔而在第四章後半段,我們使用double-gate 的元件結構,在不影響元件面積的情況下提升元件的電特性,更進一步藉由減少串聯電阻,我們製作出低操作電壓Vth<5V、高開關比ION/OFF~105、高場效載子移動率(μFE) 6.5(cm2/V.s)的薄莫電晶體元件,並藉以驅動本實驗室所製作的藍光有機發光二極體,最後我們更將薄膜電晶體元件成長於全透明玻璃基板上,實現全透明薄膜電晶體的製作。
Abstract
In this thesis, we demonstrate an all sputtering, all lithography technology process to fabricate low voltage operational, enhancement mode N-Type ZnO-TFT by using high-k material (Y2O3) as the gate oxide. The effects of different processing parameters of ZnO layer and device geometric structures to the electrical performance of device will be discussed in Chapter 4. We also did some applications of saving device area、driving OLED and fabricating TTFT array on glass substrate. Finally by improve the series resistance of TFT device, we fabricated devices had characters as field effect mobility (μFE) 6.5(cm2/V.s), ION/OFF~105, and Vth<5V.
There are two parts in this thesis. In the first part, we discuss the ZnO-TFT characters when we use different sputtering parameters and structures. The thin film and devices were analyzed by XRD、AFM、SEM/EDS、C-V and I-V measurements. In the second part, by reducing the series resistance we can fabricate good performance TFT devices; finally, we fabricate a TTFT array of ZnO-TFT on glass substrate.
INDEX
Chapter 1 Purpose of Research………………...13
1-1 The Motive and the Purpose of Research .13
Chapter 2 Fundamental Theorems …….........15
2-1 Introduction of film structure……………15
2-2 Crystal Structure & Characteristic of ZnO thin film …………….20
2-4 ZnO-Base TFT Structures and Operation.…27
Chapter 3 Materials, Instruments & parameters ………………………35
3-1 Materials……………………………… ………35
3-2 Instruments & Fabricating Processes……36
Chapter 4 Analysis & Discussion………………47
4-1 Discussion of the active layer morphology ……………………..50
4-1-1 Fabrication of a reliable dielectric layer……………………..50
4-1-3 Different ZnO layer thickness ………………………………..65
4-2 Improvement of device performance ………………………….83
4-2-2 To fabricate the device on transparent substrate ………….87
Chapter 5 Conclusion and Future Work ………………………………..93
References ………………………….…..94
References
[1] Yang, C.-S., Smith, L. L., Arthur, C. B. & Parsons, G. N. J. ,Stability of low-temperature amorphous silicon thin film transistors formed on glass and transparent plastic substrates. Vac. Sci. Technol. B 18, 683–689 (2000)
[2] Wang, S. C. et al., Device transfer technology by backside etching for poly-Si thin-film transistors on glass/plastic substrate. Jpn. J. Appl. Phys. 42, 1044–1046 (2003)
[3] Dimitrakopoulos, C. D. & Malenfant, P. R. L., Organic thin film transistors for large area electronics, Adv. Mater. 14, 99–117 (2002)
[4] Kenji Nomura1, Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors, NATURE | VOL 432 | 25 NOVEMBER 2004
[5] Chennupati Jagadish and Stephen Pearton, Zinc Oxide Bulk, Thin films and Nanostructures, Processing, Properties and Application, ELSEVIER 2006, chapter1
[6] Milton Ohring, Materials science of thin films, Deposition and Structure, Second Edition, Chapter 9 “Film structure”
[7] Chennupati Jagadish and Stephen Pearton, Zinc Oxide Bulk, Thin films and Nanostructures, Processing, Properties and Application, ELSEVIER 2006, chapter13~16
[8] Faruque M. Hossain,a),b) J. Nishii,c) S. Takagi,b) A. Ohtomo, and T. Fukumura,,JAP, Modeling and simulation of polycrystalline ZnO thin-film transistors, VOLUME 94, NUMBER 12,2003
[9] Hsinh-Hung Hsieh, Studies of Oxide-Semiconductor-Based Thin Film Transistor, January 2008
95
[10]Faruque M. Hossaina;b; , Modeling of grain boundary barrier modulation in ZnO invisible thin &lm transistors, 2003 Elsevier
[11] John Robertson, Band offsets of wide-band-gap oxides and implications for future electronic devices, 2000 American Vacuum Society
[12]Olivier Pons-Y-Moll, Structural and optical properties of rare-earth-doped Y2O3 waveguides grown by pulsed-laser deposition, 2002 American Institute of Physics
[13] S.O. Kasap, Principles of Electric Materials and Devices, Third Edition, Chapter 7 “” Dielectric Materials and Insulation
[14] Donald A.Neaman, Semiconductor Physics & Device
[15] Milton Ohring, Materials science of thin films, Deposition and Structure, Second Edition, Chapter 4 &5
[16] Da-Ren Zhuang, VLSI Manufacturing Technology, P483-484
[17]Als-Nielsen, J., McMorrow, D., Wiley, Elements of Modern X-Ray Physics, 2001
[18] Patterson, A.L.,PRL, The Scherrer Formula for X-Ray Particle Size Determination, Vol.56, p.978-982, 1939
[19] S.O. Kasap, Principles of Electric Materials and Devices, Third Edition, Chapter 9 ”Optical Properties of Material”
[20] F. Chaabouni , M. Abaab, B. Rezig, Effect of the substrate temperature on the properties of ZnO films grown by RF magnetron sputtering, 2003 Elsevier
[21] Agilent Technologies Impedance Measurement Handbook July 2006
[22] Rajesh DAS, Koel ADHIKARY, and Swati RAYy,Japanese ,Journal of Applied Physics,Vol. 47, No. 3, 2008, pp. 1501–1506
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