[1]蔡亦真,「高亮度LED應用抬頭」,2007熱門光電產業年鑑,第50-57頁,中華民國九十六年。
[2]經濟部能源局,「我國節約能源發展目標與策略」,行政院產業科技策略會議,第19頁,中華民國九十六年。
[3]B. Ackermann, V. Schulz, C. Martiny, A. Hilgers, and X. Zhu, “Control of LEDs,“IEEE Industry Applications Conference, vol. 5, pp.2608-2615, Oct. 2006.
[4]P. Pinho, E. Tetri, and L. Halonen, “Synergies of Controller-Based LED Drivers and Quality Solid-State Lighting,” IEEE - Research in Microelectronics and Electronics, pp. 405-408, Sep. 2006.
[5]甘明吉,”Diamond and related materials for the thermal management of high power LEDs”,2008顯示光源研討會,第107-124頁,中華民國九十七年。
[6]P. N. Grillot, M. R. Krames, H. Zhao, and S. H. Teoh, “Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes,”IEEE Trans. on Device and Materials Reliability, vol. 6, no. 4, pp.564-574, Dec. 2006.
[7]A. Okuno, Y. Miyawaki, N. Oyama, and W. Dongxu,“Unique White LED Systems,”IEEE EMAP, pp. 1-5, Dec. 2006.
[8]J. L. Kuo, T. Y. Wang, and J. D. Lee“Investigation on Brightness Uniformity for LED Array Display by Using Current-Based Bias Voltage Compensation,” IEICE Trans. Electron., vol.E88–C, no. 11, Nov. 2005.
[9]L. B. Chang, Y. H. Chang, and M. J. Jeng, “ Light Output Improvement of InGaN-Based Light-Emitting Diodes by Microchannel Structure,”IEEE JNL . on Photonics Technology Letters, vol 19, no. 15, pp.1175-1177, Aug. 2007.
[10]W. Schmid, M. Scherer, C. Karnutsch, A. Plobl, W. Wegleiter, S. Schad, B. Neubert, and K. Streubel, “High-efficiency red and infrared light-emitting diodes using radial outcoupling taper,“ IEEE JNL. on Quantum Electron,vol. 8, 2002.
[11]H. J. Chiu and S. J. Cheng, “LED Backlight Driving System for Large –Scale LCD Panels,” IEEE Trans. on Industrial Electronics, vol. 54, no. 5, pp.2751-2760, Oct. 2007.
[12]沈志隆,「簡易之發光二極體串列旁通電路」,中華民國新型專利,專利號碼:M301408,中華民國九十五年。
[13]D. A. Steigerwald, J. C. Bhat., D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “ Illumination with solid state lighting technology,” IEEE JNL. vol. 8, pp. 310-320, Mar. 2002.
[14]Lumileds Corporation Luxeon reliability Application Brief AB29,3,2007
[15]K. James, “BI-DIRECTIONAL LED-BASED LIGHT,” US Paten 7,053,560 Bl, May. 2006.
[16]H. Jiang and J. Lin,” LIGHT EMITTING DIODES FOR HIGH AC VOLTAGE OPERATION AND GENERAL LIGHTING,” US Paten 7,213,942 B2, May. 2007.
[17]Seoul Semiconductor, http://www.seoulsemicon.com/en/product/prd/acriche.asp
[18]III-N TECHNOLOGY, INC., http://www.3N-Tech.com/
[19]Industrial Technology Research Institute, http://www.itri.org.tw/eng/
[20]R. F. Pierret, Semiconductor Device Fundamentals, second edition, Addison-Wesley, 1996.
[21]F. Yun, M. A. Reshchikov, L. He, T. King, H. Morkoc, S. W. Novak, and L. Wei ,“Energy band bowing parameter in Al(x)Ga(1-x)N alloys,” J. Appl. Phys., vol. 92, Jan. 2002.
[22]K. Streubel, N. Linder, R. Wirth, and A. Jaeger, “ High-brightness AlGaInP light-emitting diode,” IEEE JNL. on Quantum Electronics, vol. 8, no. 2, Mar. 2002.
[23]洪瑞華,「高效率LED外部取光技術」,2008顯示光源研討會,第27-32頁,中華民國九十七年。
[24]L.W. Ji, Y.K. Su, S.J. Chang, S.C. Hung, C.S. Chang and L.W. Wu, “Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers,” IEE Proc.-Circuits Devices Syst., Vol. 151, No. 5, Oct. 2004.
[25]N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, A. P. Astakhova, M. P. Mikhaĭlova and Yu. P. Yakovlev, “High-efficiency LEDs based on n-GaSb/p-GaSb/ n -GaInAsSb/ P-AlGaAsSb type-II thyristor heterostructures, ” Semiconductors, vol. 41, no. 7, Jul. 2007.
[26]T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett., vol. 84, 2004.
[27]G. Sauerlander, D. Hente, H. Radermacher, E. Waffenschmidt, and J. Jacobs, “Driver Electronics for LEDs,” IEEE Industry Applications Conference, vol. 5, pp.2621-2626, Oct. 2006.
[28] S. Winder, Power Supplies for LED Drivers, Elsevier, 2008.
[29] F. N. Poon, M. H. Pong, and J. C. Liu, “High efficiency driver for color light emitting diodes,”European Pattent, Application number: 02027332.2, July 2007.
[30] D. A. Neamen, Semiconductor Physics and Devices, third edition, McGraw-Hill, 2002.
[31] E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, Clarendon Press, 1988.
[32]J. M. Shah, Y.-L. Li, Th. Gessmann, and E. F. Schuberta, “ Experimental analysis and theoretical model for anomalously high idealityfactors .n.2.0. in AlGaNÕGaN p-n junction diodes,” J. Appl. Phys. vol. 94, no.4, Aug. 2003.
[33] 林亮,「白色LED加速老化的特性」,發光學報,第26卷,第5期,第617-621頁, 中華民國九十四年。
[34]Agilent Tchnology, http://cp.literature.agilent.com/litweb/pdf/5952-1431.pdf
[35]Y. P. Varshni, “ Temperature dependence of the energy gap in semiconductors,” Physica, vol. 34, no. 149, 1967.
[36]E. F. Schubert, Light-Emitting Diodes, second edition, Cambridge, 2006.
[37]CIE Free Documents for Download, http://www.cie.co.at/main/freepubs.html
[38]G. Wyszecki and W.S. Stiles, Color Science , Second Edition, Wiley, 2000.
[39]J. Schanda, Colorimetry: Understanding the CIE System, Wiley, 2007.
[40]H. S. Fairman, M. H. Brill, and H. Hemmendinger, “How the CIE 1931 Color-Matching Functions Were Derived from the Wright–Guild Data,” Color Research and Application, vol. 22, no. 1, Feb. 1997.
[41]史光國,「半導體發光二極體及固態照明」,全華科技圖書,中華民國九十六年。
[42]S. Chhajed, Y. Xi, Y. L. Li, T. Gessmann, and E. F. Schubert, “Influence of junction temperature on chromaticity and color rendering properties of trichromatic white light source based on light emitting diodes,” J. Appl. Phys. 97, 054506, Feb.2005.
[43]葉峻毅,「發光二極體光學測試技術發展」,量測資訊,第98期,第28-35頁, 中華民國九十三年。[44]Light Ports Inc., http://www.lightports.com/
[45]B&W Tek, Inc., http://www.bwtek.com/Spectrometers/BRC112E-V.php
[46]Motech Industrial Inc., http://www.motech.com.tw/chinese/object/instruments/
[47]Tektronix, Inc., http://www.tek.com/
[48]LeCroy Corporation, http://www.lecroy.com/tm/products/scopes/wavejet/
[49]H. Hemmati, Deep space optical communications, Wiley, 2006.
[50]ProLight Opto Technology Corporation, http://www.prolightopto.com/