臺灣博碩士論文加值系統

本研究包含幾個部分，第一個部分為製作高介電常數感光型有機絕緣層。我們首先確認有機絕緣層高分子材料PVA與感光劑ADC之最佳混合比例，以製作出漏電流密度較低之有機絕緣層。而後我們以此有機絕緣層作為電晶體之閘極絕緣層，製作有機薄膜電晶體元件。
本研究的第二個部分為在有機薄膜電晶體元件加上保護層，分析其電性表現，我們發現不同的保護層成膜方法對於電晶體有很大的影響，所以我們選擇用真空乾燥的方式來使保護層成膜。再透過電性分析來探討環境對元件的影響。本研究的第三個部分為雙閘極電晶體元件製作。元件加上了保護層後，會造成電性上的衰退，所以我們希望透過第二個閘極形成第二個載子通道以彌補電性上的損失。我們製作出等效載子遷移率1.06 cm2/ Vs，開關電流比為1.6×103之有機薄膜雙閘極電晶體元件。最後以此元件來製作反相器電路，雙閘極元件為其Driver。經由電性分析，我們發現電晶體的臨界電壓會隨著上閘極電壓的不同而有所改變，而這影響著我們反相器輸出入轉換曲線，使我們可以找出適合數位電路應用的情形。

This study consists of four parts. In the first part, we intend to fabricate high-k, photosensitive dielectrics. First of all, we attempt to discover the best blending proportion of the photosensitive agent ADC to PVA for fabricating organic polymer dielectrics of low leackage current. Then we use this organic insulating layer as the transistor gate insulator layer of organic thin film transistor devices.
In the second part, we add possivation layer for producing organic thin film transistor. By analyzing the electric performance, We found that different methods for possivation layer have a great impact of thin film transistors. Therefore, we choose to use vacuum drying to encourage possivation layer. By analyzing the electric performance, we explore the impact of environment on the devices. In the third part, we fabricate double gate thin film transistor devices. After we add the possivation layer, the electrical property of devices lead to a recession. We hope that active layer form the second channel by the second gate to make up for the loss of electrical property. We eventually demonstrate high performance OTFTs of mobility 1.06 cm2/ Vs, and on-off ratio 1.6×103. In the last part, We use this device to create inverter circuit. We found that the threshold voltage have to change as the top gate voltage. That affects our input-output conversion curve of inverters. We can find a suitable condition for digital circuit application.

摘要
Abstract
致謝
目次
表目錄
圖目錄
第一章 續論 1
1-1 研究動機與方向 1
1-2 論文架構 2
第二章 雙閘極有機薄膜電晶體與電路應用 3
2-1薄膜電晶體 3
2-1-1 FET(Field-Effect Transistor) 3
2-1-2 TFT(Thin-Film Transistor) 7
2-2 有機薄膜電晶體概論 8
2-2-1 有機薄膜電晶體發展 8
2-2-2 有機半導體材料介紹 9
2-2-3 有機半導體載子傳輸理論 11
2-2-4 有機薄膜電晶體操作原理 14
2-2-5 有機薄膜電晶體參數 16
2-2-6 金屬與半導體界面接觸 21
2-3 薄膜電晶體結構介紹 24
2-3-1 有機薄膜電晶體結構 24
2-3-2 無機薄膜電晶體結構 25
2-4 主動層-五環素(Pentacene) 32
2-4-1 Pentacene材料特性 32
2-4-2 Pentacene分子結構 32
2-4-3 Pentacene薄膜沉積原理 34
2-5 閘極介電層 37
2-5-1 聚乙烯醇介紹 37
2-5-2 UV光聚合法 38
2-5-3 DCPVA(DiChromated PolyVinyl Achohol) 40
2-6 聚乙烯醇高介電感光型材料特性應用 41
2-6-1 雙閘極電晶體 41
2-6-2 有機薄膜電晶體應用於電路 42
第三章 實驗架構 46
3-1 實驗規劃 46
3-2 元件結構 49
3-3 實驗材料 50
3-4 實驗流程 51
3-4-1 玻璃基板之準備 51
3-4-2 UV光聚合絕緣層製作 51
3-4-3 有機半導體層製作 52
3-4-4 金屬電極製作 53
3-4-5 保護層製作 53
3-5 實驗儀器 54
3-5-1 製程儀器 54
3-5-2分析儀器 55
第四章 實驗結果與討論 57
4-1 高介電常數感光型PVA絕緣層 57
4-1-1 PVA種類對絕緣特性之影響 57
4-1-2 DCPVA曝光聚合條件 61
4-2主動層pentacene分析 69
4-2-1表面能影響pentacene薄膜之XRD分析 69
4-2-2 絕緣層表面能對pentacene成長之影響 70
4-2-3 pentacene薄膜成長機制探討 74
4-3 OTFTs元件分析 76
4-3-1 底閘極元件電性 76
4-3-2 上閘極元件電性 89
4-3-3 雙閘極元件電性 91
4-3-4 反相器電路 95
第五章 結論與展望 101
5-1 結論 101
5-2 未來展望 101
參考文獻 102

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