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研究生:佘威叡
研究生(外文):Wei-Ruei She
論文名稱:元件結構對高分子薄膜電晶體電特性研究
論文名稱(外文):Effect of device architectures on the electrical properties of polymeric thin film transistors
指導教授:鄭弘隆
指導教授(外文):Horng-Long Cheng
學位類別:碩士
校院名稱:國立成功大學
系所名稱:光電科學與工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:75
中文關鍵詞:有機薄膜電晶體上閘極式緩衝層聚(3-己烷基塞吩)
外文關鍵詞:organic thin film transistorRR-P3HTtop-gatebuffer layer
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本論文主要研究高立體規則性之有機高分子半導體聚(3-己烷基塞吩) (poly(3-hexylthiophene),RR-P3HT)為主動層之上閘極式薄膜電性晶體的元件特性。首先,利用旋轉塗佈法製作RR-P3HT薄膜當主動層,再於其上堆疊高分子絕緣材料當作介電層,最後鍍上金屬電極當閘極,製作上閘極式電晶體元件。本研究主要進行後續沉積數種高分子絕緣層對RR-P3HT主動層薄膜微結構與半導體特性的影響,並探討各種高分子絕緣層對電晶體元件電特性的影響。
首先,利用進行高分子絕緣層介電特性研究,由電容-電壓量測得知交聯結合的poly(4-vinylphenol)(C-PVP)高分子適合當主介電層材料,但並不適合直接沉積在RR-P3HT薄膜上,因此本論文聚焦於導入一個高分子緩衝層對RR-P3HT上閘極式電晶體元件的影響,本文使用聚偏氟乙烯 (PVDF)、聚乙烯吡咯烷酮 (PVnP) 、聚甲基丙烯酸甲酯 (PMMA) 、聚乙烯醇(PVA)當做緩衝層,結果指出PVDF當做緩衝層(buffer layer)所製作之上閘極電晶體元件,有最佳載子遷移率可達0.1 cm2/Vs 以上,因此建議覆蓋緩衝層將可有效保護RR-P3HT主動層,製作出高性能元件。
於第四章,吾人利用紫外-可見光吸收光譜與拉曼光譜進行有無覆蓋高分子絕緣層之RR-P3HT薄膜微結構解析,結果指出使用PVDF當緩衝層可以幫助減緩C-PVP對RR-P3HT的影響,並可幫助到RR-P3HT分子鏈重排,獲致更佳的微結構,有助於載子的傳遞,提供一個上閘極式元件電性改善的合理解釋,而其他的高分子緩衝層則無此效果。
In this thesis, we studied the thin-film microstructures and electrical characteristic of regioregular poly(3-hexylthiophene) (RR-P3HT)-based organic thin-films transistors (OTFTs) with top-gate structure. First, the RR-P3HT active layer was prepared by solution deposition through a spin-coating technique. Then, the polymeric insulators were coated onto RR-P3HT film and serve as the gate dielectrics. After preparation of the polymeric dielectrics, finally, the metal electrode was deposited upon the dielectric surface and served as a top gate electrode of the OTFT devices. We present a systematic study involving the change of the microstructural and semiconductor properties of the RR-P3HT active layer in the OTFT devices during subsequent fabrication of solution processed polymeric gate dielectrics.
First, the dielectric characteristics of polymer insulators were studied by capacitance-voltage measurements. Here, we chose a crosslinked-poly(vinylphenol) (C-PVP) as the main gate dielectric due to its good capacitance properties. We demonstrated that a high mobility of above 0.1 cm2/Vs in RR-P3HT-based top-gate OTFTs with a C-PVP gate dielectric can be achieved by introducing particular polymeric buffer layers, i.e., poly(vinylidene difluoride) (PVDF). Additionally, we also made other polymer insulators to use in a buffer layer upon the RR-P3HT films, such as poly(vinyl pyrrolidone) (PVnP), poly(methyl methacrylate) (PMMA), and poly(vinly alcohol) (PVA); unfortunately, we could not observe significant structural and charge mobility improvements in the RR-P3HT-based tog-gate OTFT devices.
In chapter 4, we studied the structural properties of RR-P3HT films before and after covering various multilayer stacks of polymer insulators by UV-Vis absorption and Raman spectroscopy. The results revealed that covering the PVDF/C-PVP bilayer dielectrics resulted in a more ordered structure of RR-P3HT films. To the contrary, we could not observe significant structural improvements of RR-P3HT films when other polymer insulators, e.g., PVnP, PMMA, and PVA, were used as the buffer layer. The observations provided a reasonable explanation for better device performance of RR-P3HT top-gate OTFTs when using PVDF as a buffer layer. Consequently, we suggested that the used buffer layer in top-gate RR-P3HT OTFTs played an important role, not only in RR-P3HT thin film structures but also the corresponding OTFT characterizations.
中文摘要..................................................I
Abstract................................................III
誌謝......................................................V
目錄.....................................................VI
表目錄................................................VIII
圖目錄..............................................IX

第1章:緒論.............................................1
1- 1 前言..............................................................................................1
1- 2 有機薄膜電晶體概論.....................................................................2
1- 2-1 導論....................................................................................2
1- 2-2 元件結構............................................................................4
1- 2-3 載子傳輸理論....................................................................8
1- 2-4 特性公式..........................................................................10
1- 3 研究動機.......................................................................................13
第2章:實驗方法與元件製備...............................................14
2-1 有機材料........................................................................................14
2-2 實驗儀器........................................................................................18
2-3 元件製備........................................................................................20
2-4 電性分析........................................................................................24
第3章聚(3-己烷基塞吩)元件特性之研究.............................25
3-1 高分子絕緣層特性研究.................................................25
3-2 覆蓋高分子緩衝層對聚(3-己烷基塞吩)元件結構影響...........................................................................................................28
3-2-1 下閘極薄膜電晶體在有無修飾層情形比較.............................28
3-2-2 各高分子緩衝層對上閘極結構元件電特性.........................39
3-3 低沸點主動層溶劑的上閘極元件特性.................................49
第4章: 有無覆蓋高分子絕緣層之聚3-己烷基噻吩的薄膜性質分析.................................................................................55
4-1 紫外-可見光吸收光譜分析......................................55
4-2 拉曼光譜(Raman)分析.........................................................63
第5章 總結與未來展望.........................................................71
參考文獻.................................................................................73
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