臺灣博碩士論文加值系統

近年來為了發展高亮度的發光二極體，而以藍光氮化鎵發光二極體之研究最具有潛力，其利用晶圓鍵合與雷射剝離技術發展出一垂直式的結構，能有效的提高發光亮度(效率)與使用時間(壽命)，並且解決了藍寶石基板的散熱問題與異質結構的熱應力問題，不過其晶圓鍵合與雷射剝離技術還有待改良的空間。
本研究著重於晶圓鍵合上，以發展至今之一氮化鎵生長於藍寶石基板鍵合於另一矽基板之結構，使用金/鎳接觸式的金屬薄膜層做低溫擴散的鍵合界面。利用Si/Au/Ni/Si之晶圓對於250、280或300℃之溫度與持溫30分鐘或1小時的參數條件，而於300℃有較好的擴散鍵合狀況。於穿透式電子顯微鏡觀察其剖面Au/Ni擴散鍵合狀況，再以二次離子質譜儀與化學分析電子光譜儀分析其金屬薄膜層擴散的縱深分佈。最後以300℃/30分鐘之參數運用於GaN/Ni/Au/Si結構，成功於低溫下之異質鍵合。

In recent years, in order to develop high-brightness light emitting diodes (LEDs), the blue GaN-LEDs are recognized as the potential material, using the wafer bonding and laser lift-off technology (LLO) to develop a vertical structure, that can effectively increase in high brightness (efficacy) and lifetime (ageing). It also solves the heat dissipation of the sapphire and the thermal stress between the heterostructure. However, there are still some problems for the wafer bonding and LLO.
This study is intended as an investigation of wafer bonding technology. A process has been developed to bond gallium nitride structures grown on sapphire with silicon substrates, using gold/nickel thin metals contacted of low temperature diffusion bonding. Si/Au/Ni/Si structures are annealing for 250、280 or 300℃ by 30min or 1hr. The 300℃ have a better bonded situation. TEM showed the cross-section of the Au/Ni bonded situation; the SIMS and ESCA showed the concentration depth profiles. Finally, the GaN/Ni/Au/Si structure in low temperature bonding by using 300℃/30min of the parameters were succeed.

中文摘要 ......................................i
英文摘要 ......................................ii
誌謝 ......................................iii
目錄 ......................................iv
圖目錄 ......................................vii
表目錄 ......................................ix

第一章、 緒論 .............................1
1-1 研究背景 .............................1
1-2 研究動機 .............................2
第二章、 文獻回顧 .............................5
2-1 晶圓鍵合技術 ....................5
2-1-1 簡介晶圓鍵合之發展 ....................5
2-1-2 晶圓鍵合技術之分類 ....................6
2-2 氮化鎵發光二極體 ....................12
2-2-1 氮化鎵於藍寶石基板之特性 ...........12
2-2-2 藍光LED封裝結構之簡介 ...........13
2-2-3 晶圓鍵合與雷射剝離技術 ...........14
2-3 氮化鎵的內應力分析 .....................21
2-3-1 理論分析 ..............................21
2-3-2 拉曼散射光譜分析 .....................23
2-4 鍵合結構的表面能理論計算分析與觀測 ...29
第三章、 實驗方法及步驟 .....................35
3-1 試片準備 ..............................35
3-2 Si/Au/Ni/Si之金/鎳擴散鍵合實驗 ...36
3-3 GaN/Ni/Au/Si之金/鎳擴散鍵合實驗 ...37
3-4 實驗結果檢測之簡介 .....................38
3-4-1 鍵合強度與鍵合情況 .....................38
3-4-2 鍵合界面層剖面的微觀結構 ............39
3-4-3 金屬層的縱深擴散分佈 ............39
第四章、 實驗結果與討論 .....................44
4-1 溫度對金/鎳擴散鍵合的影響 ............44
4-1-1 Au/Ni接觸式擴散鍵合情況 ............46
4-1-2 TEM剖面分析情況 .....................47
4-1-3 SIMS與ESCA元素縱深分析情況 ............48
4-1-4 溫度對金/鎳擴散影響之結論 ............48
4-2 氮化鎵與矽晶圓的鍵合情況 ............50
第五章、 結論 ..............................68
參考文獻 .......................................69

〔1〕S. Nakumura and G. Fasol, The Blue Laser Diode, 2nd ed. Springer, Berlin, (2000).
〔2〕S. Nakamura, Y. Harada, and M. Seno, “Novel metalorganic chemical vapor deposition system for GaN growth”, Appl. Phys. Lett., 58, 2021, (1991).
〔3〕S. Nakamura, M. Senoh, and T. Mukai, “High-power InGaN/GaN double-heterostructure violet light emitting diodes”, Appl. Phys. Lett., 62, 2390 , (1993).
〔4〕B. Benbakhti, M. Rousseau, A. Soltani, and J.-C. De Jaeger, “Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal Modeling”, IEEE Trans. Electron Devices, 53, 2237, (2006).
〔5〕T. Lei, M. Fanciulli, R. J. Molnar, and T. D. Moustakas, “Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon”, Appl. Phys. Lett., 59, 944, (1991).
〔6〕T. Lei, M. Fanciulli, R. J. Molnar, T. D. Moustakas, R. J. Graham, and J. Scanlon, “Ultraviolet and violet GaN light emitting diodes on silicon”, Appl. Phys. Lett., 72, 3056, (1998).
〔7〕W. S. Wong, A. B. Wengrow, Y. Cho, A. Salleo, N. J. Quitoriano, N. W. Cheung, and T. Sands, “Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off”, J. Electron. Mater. 28, 1409, (1999).
〔8〕W. S. Wong and T. Sands, N. W. Cheung , M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “InxGa1–xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off”, Appl. Phys. Lett., 77, 2822, (2000).
〔9〕R. F. Wolffenbuttel and K. D. Wise, “Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature”, Sens. Actuators, A, 43, 223, (1994).
〔10〕S. C. Hsu and C. Y. Liu, “Fabrication of Thin-GaN LED Structures by Au–Si Wafer Bonding”, Electrochem. Solid-State Lett., 9, G171, (2006).
〔11〕J.-K. Ho, C.-S. Jong, C. C. Chiu, C.-N. Huang, C.-Y. Chen, and K.-Kuo, “High-transparency Ni/Au ohmic contact to p-type GaN”, Appl. Phys. Lett., 74, 1275, (1999).
〔12〕D. M. Kenny, “Method of Isolating Chips of a Wafer of Semiconductor Material”, U.S. Pat., 3,332,137, (1967).
〔13〕J.B. Lasky. “Wafer Bonding for Silicon-on-Insulator Technologies”, Appl. Phys. Lett., Vol. 48, No. 1, pp. 78-80, (1986).
〔14〕M. Shimbo, K. Furukawa, K. Kukuda, and K. Tanzawa. “Silicon-to-Silicon Direct Bonding Method”, J. Appl. Phys., Vol. 60, No. 8, pp. 2987-2989, (1986).
〔15〕M. A. Schmidt, “Wafer-to-wafer bonding for microstructure formation” Proc. IEEE, 86, 1575, (1998).
〔16〕Q.-Y. Tong and U. Gösele, Semiconductor Wafer Bonding: Science and Technology, Wiley, New York, (1999).

〔17〕S. S. Iyer and A. J. Auberton-Hervé, Silicon Wafer Bonding Technology for VLSI and MEMS, INSPEC, London, UK, (2002).
〔18〕M. Alexe and U. Gösele, Wafer Bonding Applications and Technology, Springer-Verlag, Berlin, (2004).
〔19〕J. Haisma, B. C. M. Spierings, U. K. P. Biermann, and A. A. van Gorkum, “Diversity and feasibility of direct bonding: a survey of a dedicated optical technology”, Appl. Opt., 33,p.1154, (1994).
〔20〕QY Tong, G Cha, R Gafiteanu, U Gosele, “Low temperature wafer direct bonding”, J. Microelectromech. Syst., vol. 3, pp. 29–35, (1994).
〔21〕D. Sparks, G. Queen, R. Weston, G. Woodward, M. Putty, L. Jordan, S. Zarabadi, and K. Jayakar, “Wafer-to-wafer bonding of nonplanarized MEMS surfaces using solder”, J. Micromech. Microeng., 11, 630, (2001).
〔22〕Y. T. Cheng, L. Lin, and K. Najafi, J. Microelectromech. “Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging”, J. Microelectromech. Syst., 9, 3, (2000).
〔23〕G. Wallis and D.I. Pomerantz, “Field Assisted Glass-Metal Sealing”, J. Appl. Phys., Vol 40, No. 10, pp. 3946-3949, (1969).
〔24〕F. Niklaus, Adhesive Wafer Bonding for Microelectronic and Microelectromechanical Systems, Ph.D. thesis, Royal Institute of Technology, (2002).
〔25〕Y. Kwon, Wafer Bonding for 3D Integration, Ph.D. thesis, Rensselaer Polytechnic Institute, (2003).
〔26〕R. Dekker, Substrate transfer technology, Ph.D. thesis, University of Technology, (2004).
〔27〕J. Oberhammer, Novel RF MEMS switch and packaging concepts, Ph.D. thesis, Royal Institute of Technology, (2004).
〔28〕H. P. Maruska and J. J. Tietjen, “The Preparation and Properties of Vapor-Deposited Single-Crystal-Line GaN”, Appl. Phys. Lett., 15, 327, (1969).
〔29〕M. Ilegems and H. C. Montgometry, “Electrical properties of n-type vapor-grown gallium nitride”, J. Phys. Chem. Solids., 34, 885, (1973).
〔30〕G. Jacob, M. Boulou, and M. Furtado, “Effect of Growth Parameters on the Properties of GaN-Zn Epilayers”, J. Cryst. Growth., 42, 136, (1977).
〔31〕H. M. Manasevit, F. M. Erdmann, and W. I. Simpson, “The use of metalorganics in the preparation of semiconductor materials. IV. The nitrides of aluminum and gallium”, J. Electrochem. Sot., 118, 1864, (1971).
〔32〕J. E. Andrew and M. A. Littlejohn, “Growth of GaN Thin-Films from Triethylgallium Monamine”, J. Electrochem. Sot. 122, 1273, (1975).
〔33〕T. Kawabata, T. Matsuda, and S. Koike, “GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition”, J. Appl. Phys., 56, 2367, (1984).
〔34〕H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer”, Appl. Phys. Lett., 48, 353, (1986).
〔35〕I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, “Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1-xAlxN (0 < x 0.4) films grown on sapphire substrate by MOVPE” J. Cryst. Growth., 98,209, (1989).
〔36〕S. Nakamura, “GaN Growth Using GaN Buffer Layer”, Jpn. J. Appl. Phys., 30, L1705, (1991).
〔37〕N. Itoh. J. C. Rhee, T. Kawabata, and S. Koike, “Study of cracking mechanism in GaN/alpha-Al [sub 2] O [sub 3] structure”, J. Appl. Phys., 58, 1828, (1985).
〔38〕H Amano, K. Hiramatsu, and I. Akasaki, “Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11-20) and (0001) Sapphire Substrates”, Jpn. J. Appl. Phys., 27, L1384, (1988).
〔39〕T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki, “Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain”, Jpn. J. Appl. Phys., 31, L1454 (1992).
〔40〕T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, “Thermal stress in GaN epitaxial layers grown on sapphire substrates”, J. Appl. Phys., 77, 4389, (1995).
〔41〕T Englert G. Abstreiter, and J. Pontcharra, “Determination of Existing Stress in Silicon Films on Sapphire Substrate Using Raman Spectroscopy”, Solid-State Electron., 23, 31, (1980).
〔42〕G Landa, R. Caries, C. Fontaine, E. Bedel, and A. Muiioz-Yagiie, “Optical determination of strains in heterostructures: GaAs/Si as an example”, J. Appl. Phys., 66, 196, (1989).
〔43〕G Attolini L. Francesio, P. Franzosi, C. Pelosi, S. Gemnui, and P. P. Lottici, “Raman scattering study of residual strain in GaAs/InP heterostructures”, J. Appl. Phys., 75, 4156, (1994).
〔44〕J. Arokiaraj, Cheong Kee Leong, Vivian Lixian, Anna Marie Yong, and Wang Xincai, “Bonding of GaN structures with Si(100) substrates using sequentially deposited NiAu metal layers”, Appl. Phys. Lett., 92, 124105, (2008).
〔45〕Dong-Sing Wuu, Shun-Cheng Hsu, Shao-Hua Huang, and Ray-Hua Horng, “Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques”, phys. stat. sol., (a) 201, No. 12, 2699–2703, (2004).
〔46〕Mitsuru Funato, Shizuo Fujita, and Shigeo Fujita, “Integration of GaN with Si using a AuGe-mediated wafer bonding technique”, Appl. Phys. Lett., Vol. 77, No. 24, (2000).
〔47〕C. L. Chang, Y. C. Chuang, and C. Y. Liu, “Ag/Au Diffusion Wafer Bonding for Thin-GaN LED Fabrication”, Electrochemical and Solid-State Letters, 10 (11) H344-H346, (2007).
〔48〕M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Optical patterning of GaN films”, Appl. Phys. Lett., 69, 1749, (1996).
〔49〕G. H. Olsen and M. Ettenberg, “Calculated stresses in multilayered heteroepitaxial structures”, J. Appl. Phys., 48, 2543, (1977).
〔50〕M. E. Sherwin and T. J. Drummond, “Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on β-SiC”; J. Appl. Phys., 69, 8423, (1991).
〔51〕W. Hayes, R. Loudon, Scattering of light by crystals, Wiley, New York (1978).
〔52〕I. Gorczyca, N.E. Christensen, E.L. Peltzer y Blanca, C.O. Rodriguez, “Optical phonon modes in GaN and AlN”, Phys. Rev., B 51, 11936, (1995).
〔53〕P. Perion, C.J. Carillon, J.P. Itie, A.S. Miguel, I. Grzegory, A. Polian, “Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure”, Phys. Rev., B 45, 83, (1992).
〔54〕C. Kisielowski, J Kruger, S. Ruvimov, T. Suski, J.W. Ager III, E. Jones, Z. Liliental-Weber, M. Rubin, E.R. Weber, M.D. Bremser, R.F. Davis, “Strain-related phenomena in GaN thin films”, Phys. Rev., B 54, 17745, (1996).
〔55〕J.F. Nye, Physical Properties of Crystals, Clarendon Press, Oxford (1984).
〔56〕H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, M. Burns, “Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies”, J. Appl. Phys., 76, 1363, 1994.
〔57〕R.F. Wolffenbuttel, K.D. Wise, “Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature”, Sensors and Actuators A, 43, 223-229 (1994).
〔58〕M. S. Metsik, “Splitting of mica crystals and surface energy”, J. Adhes., 3, 307, (1972).
〔59〕W. P. Maszara, G. Goetz, A. Cavilia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator”, J. Appl. Phys., 64, 4943. (1988).
〔60〕J.Wang, X.G.Lu, B.Sundman, X. P. Su, “Thermodynamic assessment of the Au-Ni system”, CALPHAD, 29, 263-268, (2005).
〔61〕小川洋輝，崛池靖浩著，半導體潔淨技術，顏誠廷譯，普林斯頓國際有限公司，臺北縣，民國九十二年。
〔62〕Martin A. Schmidt, “Wafer-to-Wafer Bonding for Microstructure Formation” Proceedings of the IEEE, Vol. 86, N0. 8, (1998).
〔63〕T. Suni, K. Henttinen, I. Suni, and J. Mäkinen, “Effects of Plasma Activation on Hydrophilic Bonding of Si and SiO2” J. Electrochem. Soc., Volume 149, Issue 6, pp. G348-G351, (2002).
〔64〕Ahmed M. Abdul-Lettif, “Auger depth profiling of heat-treated Au/Ni thin films”, Surf. Interface Anal., 33: 306–308, (2002).
〔65〕A.M. Abdul-Lettif, “Determination of diffusion coefficients in Au/Ni thin films by Auger electron spectroscopy”, Phys. Status Solidi (a) 201, No. 9, 2063–2066 (2004).
〔66〕Murch G.E., Bruff C.M. & Mehrer H. (ed.), Diffusion in Solid Metals and Alloys, Ch. 5, Springer - Verlag: Berlin, (1990).
〔67〕J. Bauerle and J. S. Koehler, “Quenched-in Lattice Defects in Gold”, Phys. Rev. 107, (1957).
〔68〕Ahmed M. Abdul-Lettif, “Grain boundary diffusion coefficients in gold-nickel thin films”, Surf. Interface Anal., 35, 429-431, 2003.
〔69〕Kaur I, Gust W. & Mehrer H (ed.), Diffusion in Solid Metals and Alloys, Ch. 12, Springer-Verlag: Berlin, (1990).
〔70〕L. C. Chen, F. R. Chen, J. J Kai, L. Chang, J. K. Ho, C. S. Jong, C. C. Chiu, C. N. Huang, C. Y. Chen and K. K. Shih, “Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN”, J. Appl. Phys., 86, 3826, (1999).