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研究生:洪嘉政
研究生(外文):Chia-Cheng Hung
論文名稱:砷化銦鋁/砷化銦鎵變晶式高電子移動率電晶體之光電特性研究
論文名稱(外文):Optical and electrical characterization of the InAlAs/InGaAs metamorphic high electron mobility transistor structures
指導教授:林得裕
指導教授(外文):Der-Yuh Lin
學位類別:碩士
校院名稱:國立彰化師範大學
系所名稱:電子工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:52
中文關鍵詞:高電子移動率電晶體二維電子氣霍爾量測
外文關鍵詞:HEMT2DEGHall measurement
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本論文利用光激發螢光光譜(PL)、霍爾量測(Hall measurement)、光電導(PC)及光霍爾量測(photo-Hall),在溫度15K至300K範圍對砷化銦鋁/砷化銦鎵變晶式高電子移動率電晶體二維電子氣(2 DEG)進行實驗。實驗上的樣品是以化學有機金屬氣相沈積(MOCVD)成長於半絕緣砷化鎵基板上。使用的兩個樣品為相同結構,但是其中樣品A的覆蓋層(cap layer)已利用溼蝕刻去除。由光激發光光譜的量測上,可以看到來自通道層11H及21H的躍遷訊號,而從光激發螢光光譜的擬合上,我們可以獲得次能階的躍遷訊號、費米能階等的訊息,而且也能用來估算通道中的二維載子濃度。光電導的量測可以得到元件中各層的躍遷訊號。我們也從變溫霍爾量測的結果得到元件隨著溫度改變,實際的載子濃度及載子移動率變化情形。以光霍爾的量測方式,可以量測得到在照射不同波長光線時的載子濃度變化量,以及樣品的吸收係數。
We present the studies of two-dimensional electron gas (2DEG) in two (etched and nonetched) InGaAs/InAlAs/InGaAs metamorphic high electron mobility transistor (mHEMT) structures using photoluminescence (PL), photoconductivity (PC), Hall and photo-Hall measurements. These two samples were grown by metal-organic chemical vapor deposition (MOCVD) on semi-insulating GaAs substrate and were designated as A (etched) and B (nonetched). Sample A has the same layer with sample B but its Si doped cap layer has been etched. In the PL spectra, two optical features are observed, and they are identified to be the 11H and 21H transitions localized in the channel layer. It can be used to estimate related information about the energy positions of electron quantization levels, and Fermi level by fitting the PL spectra, and then the carrier concentration can be estimated at various temperatures. We also performed the Hall measurements at different temperatures. Compare the Hall data (including carrier concentration and mobility) of samples A and B, two conduction channels, the high mobility 2DEG in channel layer and the low mobility electrons in cap layer are observed. We also presented the PC and photo-Hall spectra, the intersubband transitions and the carrier concentration induced by photo illumination were observed. Absorption coefficient of the channel layer can be estimated from the photo-Hall spectra.
目 錄
中文摘要 i
英文摘要 ii
誌謝 iii
目錄 iv
圖目錄 vi
第一章緒論 1
第二章樣品結構與原理 3
2-1砷化鎵高電子移動率電晶體特性 3
2-2樣品結構 6
第三章量測原理及量測技術介紹 10
3-1 光激發螢光光譜 10
3-1-1 激發螢光光譜相關原理 10
3-1-2 光激發螢光光譜相關理論 12
3-1-3光激發螢光光譜系統 16
3-2 霍爾量測 17
3-2-1 霍爾效應相關理論 17
3-2-2 van der Pauw量測法 22
3-2-3霍爾量測系統 26
3-3光電導 27
3-3-1光電導之相關理論 28
3-3-2光電導量測系統 30
第四章 結果與討論 31
4-1 變溫霍爾量測 31
4-2光激發螢光光譜 34
4-2-1溫度變化之光激發光螢光光譜 34
4-2-2光激發光光譜擬合估算及霍爾量測載子濃度比較 38
4-3光電導光譜 40
4-4光霍爾 43
4-4-1利用光霍爾量測結果計算吸收係數 45
第五章 結論 50
參考文獻 52
作者簡介 54
圖 目 錄
圖2-1 AlGaAs/GaAs結構示意圖 3
圖2-2 AlGaAs/GaAs能帶示意圖 4
圖2-3 pHEMT及mHEMT結構示意圖 5
圖2-4樣品A結構示意圖 6
圖2-5樣品B結構示意圖 7
圖2-6樣品能帶結構示意圖 7
圖3-1直接能隙光激發螢光能帶圖 10
圖3-2電子電洞對的吸收以及五種產生躍遷機制 11
圖3-3量子井內的四個躍遷訊號 12
圖3-4光激發螢光光譜量測系統架構 16
圖3-5 p-type半導體霍爾量測示意圖 18
圖3-6 n-type半導體霍爾量測示意圖 18
圖3-7電阻率量測示意圖 23
圖3-8霍爾電壓量測示意圖 24
圖3-9霍爾量測系統架構圖 26
圖3-10光電導示意圖 27
圖3-11光吸收示意圖 28
圖3-12光電導量測系統架構圖 30
圖4-1樣品A變溫霍爾量測 32
圖4-2樣品B變溫霍爾量測 32
圖4-3樣品A與樣品B變溫霍爾量測比較 33
圖4-4樣品A變溫光激發螢光光譜與擬合曲線 35
圖4-5樣品A躍遷訊號估算 35
圖4-6樣品B變溫光激發螢光光譜與擬合曲線 36
圖4-7樣品B躍遷訊號估算 36
圖4-8樣品B光激發光譜線放大 37
圖4-9樣品B之溫度變化光激發螢光光譜圖與擬合曲線 37
圖4-10樣品A之變溫光電導譜線 39
圖4-11樣品A光激發螢光光譜、光霍爾光譜比較 41
圖4-12樣品A光激發螢光光譜、光電導光譜比較 41
圖4-13樣品A光霍爾量測譜線 44
圖4-14樣品A光霍爾載子濃度與光電導譜線比較 44
圖4-15樣品A改變頻率電導譜線 46
圖4-16樣品A改變頻率下的載子濃度相對值 48
圖4-17燈源入射光強度及照射樣品反射光強度 48
圖4-18樣品反射率 49
圖4-19樣品A吸收係數譜線 49
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