本研究是利用一經由標準C-MOS 製程製造之新式微槳型懸臂樑
結構，量測在微奈米尺度下銅薄膜材料機械行為，相較於傳統平行
樑，本研究所使用厚度40μm 與120μm 微槳型懸臂樑結構可以改善應
力集中問題。試件驅動方式採用靜電力驅動並結合四步相位移法來量
測微槳型結構之變形量,並可藉由量測系統來量測薄膜殘留應力,最後
對系統提出改善方法和建議。

A test structure with micro-nano scale copper film, which is deposited on the novel paddle-like cantilever beam, was successfully fabricated using standard C-MOS processes. Compared to the traditional cantilevered beam, the 40 μm and 120μm thickness paddle-like structure provides the uniform stress distribution along the whole beam to ecrease the measurement variation. The deflections of Cu film led by the electrostatic force were measured using four step phase-shifting method. The measurement results present that the test structure and the optical (FSPS)
method work properly. And the performance of system responding to the magnitude of the film residual stresses was calculated. Finally, research mentions some methods and suggestions for this system.

目錄
中文摘要....................................................I
英文摘要...................................................II
謝誌.....................................................III
目錄......................................................IV
表目錄...................................................VII
圖目錄..................................................VIII
第一章 緒論.................................................1
1-1 研究背景................................................1
1-2 研究動機................................................3
1-3 研究目的................................................4
1-4 量測原理................................................4
1-5 論文架構...............................................14
第二章 文獻回顧............................................15
2-1薄膜材料機械性質量測回顧..................................15
2-2-1 晶片彎曲法(wafer curvature)..........................15
2-2-2 晶格常數應變量測法(Lattice parameter strain) .........17
2-2-3 奈米壓痕法(nanoindentation)..........................18
2-2-4 膨脹測試法(Bulge testing)............................19
2-2-5 微拉伸試驗法(microtensile testing)...................20
2-2-6 共振測試法(Resonance testing method).................22
2-2-7 微型樑彎矩測試法(Microbeam bending test)..............24
2-4 總結..................................................25
第三章 試件設計與製程.......................................27
3-1 前言..................................................27
3-2 試件設計...............................................27
3-3 試件製程...............................................29
3-4 懸臂樑彎曲推導.........................................35
第四章 系統架構............................................39
4-1 前言..................................................39
4-2 光學系統...............................................39
4-3 四步相位移法(Four Steps Phase Shifting Method).........43
4-4 靜電驅動系統...........................................46
4-5 量測系統結合...........................................47
第五章 實驗結果............................................53
5-1 實驗步驟...............................................53
5-2 實驗結果...............................................57
5-2-1 前言................................................57
5-2-2 系統穩定測試.........................................57
5-2-3 力與變形量...........................................61
第六章 結論與未來展望.......................................69
6-1 結論..................................................69
6-2 未來展望...............................................69
參考文獻...................................................72

表目錄
表1.1 2008 年第一季全球前五大電視晶片廠商出貨量與排名………2
表2.1 各種量測方法優缺點比較……………………………………...26
表3.1 Wafer 清洗程序……………………….………………30
表3.2 光阻塗佈參數……………………………………………31
表3.3 ICP-RIE 參數……..…………………………………31

圖目錄
圖1-1 平板受彎曲力矩作用示意圖……………………………………5
圖1-2 平板x 軸方向應力與M關係……………………………………6
圖1-3 樑受力彎曲幾何關係圖…………………………………………6
圖1-4 樑受力彎曲示意圖………………………………………………8
圖1-5 基板與薄膜上的力……………………..……………………..9
圖1-6 薄膜材料與基板應力關係………………………………..……10
圖1-7 基板上彎曲力矩與薄膜材料應力……………………...….…10
圖1-8 基板x 軸方向應力情形…………………..…………….…..11
圖1-9 基板與薄膜應力分佈情形………………………..……………12
圖1-10 薄膜材料εmisfit………………………………………..…13
圖2-1 晶片曲率量測示意圖……………………...…………………16
圖2-2 X-ray 應力量測示意圖………………………………………17
圖2-3 利用奈米壓痕試驗機進行微懸臂彎曲試驗顯微鏡圖……...18
圖2-4 膨脹測試法量測示意圖………………...…19
圖2-5 dog-bone 微拉伸試件示意圖……………………………...22
圖2-6 改良後微拉伸試件示意圖…………………………………...22
圖2-7 共振測試法量測示意圖………………………………………..23
圖2-8 微型樑彎矩量測示意圖……………………………………..…24
圖2-9 平行懸臂樑應力分佈圖………………………………………..25
圖3-1 試件俯視與剖視圖……………………………………………..28
圖3-2 以LPCVD 沉積Nitride…………………………………………29
圖3-3 定義試件圖形………………………………………………..…30
圖3-4 光罩佈局圖 (a)正面(b)背面…………………………………30
圖3-5 利用RIE 蝕刻氮化矽遮罩……………………………….……31
圖3-6 移除試件表面光阻…………………………………………….32
圖3-7 以KOH 進行雙面濕式蝕刻…………………………………..32
圖3-8 以KOH 進行單面濕式蝕刻……………………………….….33
圖3-9 利用HF 清除試件表面Nitride……………………………..33
圖3-10 鍍上金屬材料與導電層………………………………………34
圖3-11 試件實體圖…………………………………………………….34
圖3-12 試件未鍍膜前實體圖………………………………………….34
圖3-13 試件鍍膜後實體圖………………………………………….…35
圖3-14 三角形等應力懸臂樑模型……………………………………35
圖3-15 樑彎曲結果比較……...……………………………….……36
圖3-16 槳型懸臂樑厚度40μm試件荷重校正結果………………..…37
圖3-17 槳型懸臂樑厚度120μm試件荷重校正結果…………………38
圖4-1 麥克森干涉光路示意圖………………………………………..40
圖4-2 光學量測系統示意圖…………………………………………..41
圖4-3 由CCD 擷取試件干涉圖…………………………………..…..42
圖4-4 干涉光路流程圖………………………………………………..42
圖4-5 干涉條紋轉換示意圖……………………………………………43
圖4-6 利用PZT產生相位移示意圖……………………………………45
圖4-7 利用四步相位移法所擷取各相位干涉影像……………………45
圖4-8 平行板電容示意圖……………………………………………..47
圖4-9 量測系統示意圖…………………………………………………48
圖4-10 試件基座示意圖……………………………………………….49
圖4-11 件基座工程圖 (a) 前視圖 (b) 右側視圖 (c) 俯視圖 (d) 等角
視圖……………………………………………………………………..49
圖4-12 改良後試件基座示意圖…………………………..…………50
圖4-13 改良後試件基座工程圖 (a) 前視圖 (b) 右側視圖 (c) 俯視
圖 (d) 等角視圖……………………………………………………....51
圖4-14 試件基座實體圖…………………………………………….….52
圖4-15 光學量測系統實體圖………………………………………..…52
圖5-1 實驗流程圖………...…………………………………………..56
圖5-2 干涉條紋密集影像………………………………………...……57
圖5-3 厚度120μm試件穩定測試………………………………………58
圖5-4 厚度40μm試件穩定測試……………………………….….…58
圖5-5 120μm試件在穩定前的四步相位移圖(a)π/2 相位(b) 1π相位
(c)3/2π相位(d)2π相位…………………………………..………59
圖5-6 120μm試件在穩定後的四步相位移圖(a)π/2 相位(b) 1π相位
(c)3/2π相位(d)2π相位……………………………………..……60
圖5-7 40μm試件在穩定前的四步相位移圖(a)π/2相位(b)1π相位(c)3/2π
相位(d)2π相位……………………………….…………………60
圖5-8 40μm試件在穩定後的四步相位移圖(a)π/2 相位(b)1π相位
(c)3/2π相位(d)2π相位……………………………………..……..61
圖5-9電壓與力關係…………………………………………….………62
圖5-10 力與120μm試件變形量關係……………………………..….63
圖5-11 力與40μm試件變形量關係……………………………………63
圖5-12 1μm之銅薄膜量測…………………………………..…………64
圖5-13 1μm之銅薄膜應力與時間關係………………..………………64
圖5-14 2μm之銅薄膜量測…………………………………..…………65
圖5-15 2μm之銅薄膜應力與時間關係………………………..………65
圖5-16 施加電壓與薄膜應力關係……………………………….……66
圖5-17 120μm未鍍膜試件在未施加荷重的四步相位移圖(a)π/2 相位(b)
1π相位(c)3/2π相位(d)2π相位及(e)3D圖……………….………67
圖5-18 120μm未鍍膜試件在施加荷重500mg的四步相位移圖(a)π/2相
位(b) 1π相位(c)3/2π相位(d)2π相位及(e)3D圖…………...……68

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