本論文利用掃描穿隧顯微術(Scanning Tunneling Microscopy, STM) 和掃描穿隧能譜術(Scanning Tunneling Spectroscopy, STS)來分析在Si(110)-16�e2表面自有序組裝(self-organization)成長的平行矽化釓奈米線陣列的形貌及電子結構。我們使用Si(110)-16�e2表面當作基板，將金屬釓(Gd)蒸鍍在600℃的高溫Si(110)-16�e2表面上，並且在400℃-600℃的溫度下退火20-30分鐘，使金屬釓Gd在Si(110)-16�e2表面上自有序組裝的平行矽化釓奈米線陣列。由STM影像分析出矽化釓平行奈米陣列之平均線寬約為4nm，最長之線長可達360nm，最大長寬比為90。經由bias-dependent的STM影像發現在同一個表面區域，藉由改變針尖的偏壓，可以得到在矽化釓奈米線上釓原子的滿能態和奈米線之間的釓原子之空能態同時具有互相交替的現象，這是因為具有巨大磁矩的釓(Gd)4f電子之間的磁交互作用，使得矽化釓奈米線上的電子結構會隨著偏壓有所變化。

In this thesis, the morphology and electronic structure of the self-organized parallel Gd-silicide nanowire arrays on Si (110)-16×2 surface were studied in detail by scanning tunneling microscopy and scanning tunneling spectroscopy. We used Si (110)-16×2 superstructure as a nanotemplate, and Gd metal was deposited onto Si(110)-16�e2 surface at 600℃. After deposition the sample were then annealed at 400℃-600℃ for 20-30 minutes. This process leads to the self- organization of the parallel Gd-silicide nanowire arrays on Si(110)-16×2 surface. The average line width of Gd-silicide nanowire is ~4 nm , the longest length can reach ~360nm and the maximum aspect ratio is ~90. The bias-dependent STM image exhibits Gd-silicide nanowires of filled state alternating with nanowires of empty state, because the large magnetic moment of the Gd 4f electrons creates magnetic coupling within nanowires.

摘要 I
第一章 緒論 1
1.1 簡介 1
1.2 文獻回顧 4
1.3 研究動機 9
第二章 自組裝成長的機制 12
2.1 物理氣相沉積方式成長薄膜的機制 12
2.2自組裝(Self-Assembly) 14
2.2.1自組裝的概念 14
2.2.2 奈米結構之自行組裝的製作 15
2.3 自有序組裝奈米結構(Self-organization of nanostructure) 17
第三章 掃描穿隧顯微術(Scanning Tunneling Microscopy, STM)原理 19
3.1 STM原理 19
3.2 UHV VT-STM的儀器裝置 24
3.3 UHV VT-STM的工作模式 38
3.4 STM的取像模式 40
3.5掃描穿隧能譜術(Scanning Tunneling Spectroscopy, STS) 42
3.5.1掃描穿隧能譜術原理 42
3.5.2掃描穿隧能譜術測量 42
3.6真空系統 46
第四章 實驗方法 49
4.1 試片準備 49
4.2 磁性鎳針尖的製備 50
4.3 抽真空過程 52
4.4 Si(110)-16×2表面清潔程序 54
4.5 蒸鍍釓(Gadolinium, Gd)的方法 56
第五章 實驗結果 58
5.1 乾淨的Si(110)-16×2表面 58
5.2 成長矽化釓奈米線陣列 62
5.2.1 實驗條件(一) 64
5.2.1.1 STM影像分析 64
5.2.2 實驗條件(二) 70
5.2.2.1 STM影像分析 70
5.2.2.1 STS能譜分析 71
5.2.3 實驗條件(三) 78
5.2.2.1 STM影像分析 78
5.2.2.1 STS能譜分析 82
5.3 討論 91
5.4 未來改進 94
第六章 結論 95
參考文獻 96

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