目前提高發光二極體的發光效率之方法多半利用粗化製程去提升亮度，本篇論文中使用了粗化製程搭配奈米金屬進而對發光二極體之發光效率進行相關的研究。首先利用半導體製程中的黃光製程技術和ICP乾式蝕刻技術，在藍光InGaN發光二極體的P型氮化鎵表面，製作出粗糙之凹槽的表面微米圓形孔洞陣列結構。使用濺鍍沉積技術將奈米金與二氧化矽沉積於微米圓形孔洞內，利用金屬薄膜與主動層之間距對於表面電漿共振現象之關係，搭配粗化製程藉以有效之提升發光效率。其結果顯示使用其發光效率提升了約46%左右。

In this paper, to promote the Light Emitting Diode luminous efficiency, The coarsening process using nano-metals with which to light-emitting diode light-emitting efficiency of research. Using the semiconductor process in yellow light process technology and ICP dry type etching technique, in the blue light InGaN Light Emitting Diode P nitriding gallium surface, manufactures the rough scoop channel''s superficial micron circular hole array architecture. The use splashes to plate the deposition technology a nanometer gold and silicon dioxide deposition in the micron circular hole, so as to spacing of use metallic film and driving level regarding the superficial plasma relations of resonance effect, So as to matches the rough process the effective promotion luminous efficiency

中文摘要 II
ABSTRACT III
誌謝 IV
目錄 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1.1前言 1
1.2研究目的與動機 1
1.3文獻回顧 2
1.4論文架構 3
第二章 基礎理論 5
2.1發光二極體工作原理與發光機制 5
2.1.1雙異質接面結構可提高發光效率 8
2.1.2發光二極體表面處理之光學增益 9
2.2光學損耗的理論 10
2.2光子晶體與發光二極體發光效率 13
2.3發光二極體表面增加結構 14
2.4金奈米粒子 16
2.4-1金屬奈米粒子簡介 16
2.4-2奈米粒子的性質－表面效應（Surface Effect） 17
2.4-3奈米粒子的性質－量子尺寸效應 17
2.4-3金屬奈米粒子的製備方法 18
2.5表面電漿現象原理 20
2.5.1光學激發表面電漿之方式 21
第三章實驗安排、製程與儀器介紹 24
3.1實驗設計流程與安排 24
3.2實驗樣品結構 29
3.3製作技術流程 30
3-3.1 次微米孔洞製程 30
3-3.2奈米金屬製程 36
3.4發光二極體製程 36
3-4.1透明導電層之區域製作與乾式蝕刻高台(mesa etching)及離子佈值 38
3-4.2 P N型電極導電層製作 41
3-4.3金屬鈍化層(Passivation)製作 42
3.5量測儀器介紹 43
3-3-1 電流電壓關係量測(I-V) 43
3-3-4 掃描式電子顯微鏡原理 44
3-3-5共軛焦顯微鏡 45
第四章實驗結果與討論 47
4.1 電流電壓量測 47
4.1-1 粗化製程之電流電壓量測分析與比較 47
4.1-2粗化製程撘配SPR之電流電壓量測分析與比較 48
4.1-3全部實驗之電流電壓量測分析與探討 49
4.2 發光強度量測 50
4.2-1粗化製程之光亮度量測分析與比較 50
4.2-2粗化製程撘配SPR之光強度量測分析與比較 51
4.2-3全部實驗之光強度量測分析與探討 51
4.3 探討與比較 52
第五章 結論與未來展望 54
5.1 結論 54
5.2 未來展望 54
參考文獻 55

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