為瞭解半導體廠周界大氣氣膠特性，本研究於2008年9月至2009年6月間，在南部某半導體廠為主之科學園區中心約48.9 m高樓頂與地面、周界東北側(5 m)、西南側(16 m高)及園區外背景測點，每季以分道採樣器(Dichot)採集日(08:00~17:00)、夜間(17:00~翌日8:00)大氣粗、細懸浮微粒，分析微粒上水溶性離子（F-、Cl-、Br-、NO3-、SO42-及PO43-、Na+、NH4+、K+、Mg2+、Ca2+）及碳成分（EC及OC），以瞭解以半導體廠為主之科學園區大氣氣膠特性。研究結果顯示：採樣期間各採樣點大氣PM10濃度由高至低依序分別為周界西南側(80.8±27.5 μg/m3)＞園區中心樓頂(68.4±23.1 μg/m3)＞背景A (66.4±29.4 μg/m3)＞周界東北側(59.4±20.6 μg/m3)＞地面測點(53.0±16.0 μg/m3)＞背景B (41.4±11.3 μg/m3)；園區中心樓頂大氣PM2.5/PM10值(0.61±0.10)明顯地較其周界東北側及西南側之值(分別為0.52±0.09及0.49±0.09)高，且園區中心樓頂大氣PM10約有近六成是由細微粒(PM2.5)所貢獻。園區中心及其附近周界大氣PM2.5之組成中約有將近一半(0.44~0.49)是水溶性離子，而以園區中心樓頂之值(0.49±0.07)最高；反之，其大氣粗微粒(PM2.5-10)上水溶性離子含量則僅佔三成左右(0.26~0.31)。園區中心樓頂大氣PM2.5上F-、Cl-、Br-、SO42-與NH4+及其PM2.5-10上PO43-濃度均明顯地較其附近周界(東北側、西南側)及背景點之值高，推測其可能與園區內半導體製程使用原物料之排放有關。園區中心樓頂、地面及其附近周界大氣PM2.5中約有35%(0.33~0.36)是碳成分(EC+OC)，而PM上之EC及OC主要分佈在細微粒(PM2.5)上，且粗、細微粒上OC含量(佔23%)約為其EC值(佔10%)之2倍以上。科學園區地面大氣NMHC濃度明顯地較附近環保署空氣品質監測站之監測值高(1.5倍以上)，此可能與園區內半導體製程使用之有機溶劑及其逸散之揮發性有機物(VOCs)有關。

This study was conducted from September, 2008 to June, 2009 at a semiconductor plant in a science park in southern Taiwan to understand the characteristics of ambient atmospheric aerosol in the vicinity of semiconductor plants. There were six sampling sites: ground, roof of the plant building (48.9 m high), northeast ambient (5 m high), southwest ambient (16 m high), and outside of Science Park (background). Dichot samplers were used daytime (08:00~17:00) and nighttime (17:00~8:00 the second day) to collect the coarse and fine aerosols quarterly. Besides, water-soluble ions of the particles (F-, Cl-, Br-, NO3-, SO42-, PO43-, Na+, NH4+, K+, Mg2+, Ca2+) and carbon contents (EC and OC) were analyzed. The results showed that during the studied period, the PM10 concentration from high to low was southwest ambient (80.8±27.5 μg/m3) > top of the plant building (68.4±23.1 μg/m3) > background A (66.4±29.4 μg/m3) > up-wind ambient (59.4±20.6 μg/m3) > ground site (53.0±16.0 μg/m3) > background B (41.4±11.3 μg/m3). The PM2.5/PM10 ratios at the plant building roof (0.61±0.10) were higher than those at the ambient northeast and southwest sites (0.52±0.0 and 0.49±0.09, respectively). About 60% of the aerosols on the roof of plant building were fine-sized particles. About half (0.44–0.49) of atmospheric PM2.5 at the park center (plant building top and ground sites) and northeast/southweat ambient were water-soluble ions and the ratio was the highest on the top of plant building (0.49±0.07). However, only about one third (0.26–0.31) of coarse aerosols (PM2.5-10) were water-soluble ions. The concentrations of F-, Cl-, Br-, SO42-, and NH4+ of PM2.5 and PO43- of PM2.5–10 on the plant building roof were significantly higher than those of northeast/southwest ambient and background. This phenomenon was related to the emission of materials used in the semiconductor plants. The carbon content (EC + OC) of PM2.5 was about 35 % (0.33–0.36) at the park center and ground and northeast/southwest ambient. Moreover, the particulate EC and OC were primarily in fine particles (PM2.5). The OC content (23%) was double higher than that of EC (10%) for both coarse and fine particles. The ground atmospheric NMHC concentrations in the science park were greater than those recorded by an air quality monitoring station of Taiwan EPA. This phenomenon is possibly related to the organic solvents used and volatile organic compounds (VOCs) fugitive in semiconductor manufacturing processes.

目錄
摘要 I
Abstract III
謝誌 V
表目錄 X
圖目錄 XII
第1章 前言1
1.1 研究緣起1
1.2 研究目的1
第2章 文獻回顧3
2.1 半導體業介紹3
2.1.1 半導體業製程3
2.1.2 半導體業製程所需之原料5
2.1.3 半導體業空氣污染物排放特性6
2.1.4 半導體業相關法規標準7
2.1.5 半導體業空氣污染物排放特性之相關研究8
2.2 光電業介紹11
2.2.1 光電業製程及其污染來源11
2.2.2 光電業製程所需之原料13
2.2.3 光電業法規標準15
2.3 大氣懸浮微粒15
2.3.1 懸浮微粒之定義及其來源15
2.3.2 懸浮微粒之特性18
2.4 懸浮微粒對人體健康及環境之危害20
2.4.1 懸浮微粒對人體健康之影響20
2.5 懸浮微粒上水溶性離子21
2.5.1 微粒上水溶性離子成份之來源21
2.5.2 微粒上水溶性離子成份之特性22
2.5.3 硫酸鹽及硝酸鹽之轉化現象23
2.6 微粒上碳成份25
2.6.1 微粒上碳成份之來源25
2.6.2 微粒上碳成份之特性25
2.6.3 二次有機碳推估(OCsec)27
第3章 研究方法29
3.1 採樣規劃29
3.1.1 採樣點之環境描述29
3.2 採樣設備32
3.2.1 分道採樣器（Dichot）32
3.2.2 空氣品質監測車34
3.3 微粒成分分析36
3.3.1 懸浮微粒質量濃度秤重分析36
3.3.2 微粒上水溶性離子分析 36
3.3.3 微粒上碳成分分析37
3.4 品質保證與品質控制38
3.4.1 採樣方法之品保與品管 38
3.4.2 分析方法之品保與品管 43
第4章 結果與討論47
4.1 半導體廠中心及附近周界大氣微粒特性及季節差異47
4.1.1 各採樣點大氣懸浮微粒質量濃度47
4.1.2 各季大氣懸浮微粒濃度50
4.1.3 日夜大氣懸浮微粒濃度55
4.2 半導體廠周界大氣微粒上水溶性離子58
4.2.1 微粒上水溶性離子濃度及含量58
4.2.2 微粒上硫酸鹽及硝酸鹽之轉化77
4.3 半導體廠周界大氣微粒上碳成分80
4.3.1 微粒上碳成分濃度及含量80
4.3.2 大氣微粒上二次有機碳之推估84
4.4 科學園區氣狀污染物之監測濃度86
4.4.1 SO2監測濃度86
4.4.2 CO監測濃度 88
4.4.3 O3監測濃度 90
4.4.4 NO監測濃度 92
4.4.5 NO2監測濃度94
4.4.6 NOX監測濃度96
4.4.7 THC監測濃度98
4.4.8 NMHC監測濃度100
第5章 結論與建議102
5.1 結論 102
5.2 建議 103
參考文獻 104
附錄112
作者簡介116

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