臺灣博碩士論文加值系統

本文是介紹在氧化鋅基板的O-polar面上使用分子束磊晶法成長氮化銦薄膜，利用氮銦流量比的改變來觀察樣品表面形貌的差異，另外也使用有熱退火與無熱退火的氧化鋅基板來成長氮化銦薄膜，並且觀察樣品表面形貌有何異同。我們使用原子力顯微鏡、掃描式電子顯微鏡、反射式高能電子繞射、穿透式電子顯微鏡、X-ray繞射與穿透光譜來分析樣品的表面形貌與結晶結構。在掃描式電子顯微鏡與原子力顯微鏡的量測結果中觀察到，當氮銦比增加時，表面的平整度變好，但是隨著氮銦比變大，表面卻出現凹洞，原因是氧化鋅基板與氮化銦薄膜發生反應產生氧化銦所導致。從X-ray的繞射分析中量測出氮化銦(0002)最佳的半高寬值為94.44 (arcsec)，顯示出在氧化鋅基板的O-polar面上可以成長出高品質的氮化銦薄膜。穿透光譜所量測到氮化銦的能隙大小，也隨著氮銦比的增加而變大，主要的原因也是因為氮化銦的氧化物產生導致能隙變大。

In this thesis , we study the surface morphology of InN thin film grown on O-polar ZnO substrate by Macular Beam Epitaxy with varied N/In flow ratio. In addition, we also observe the difference to surface of InN between the substrate have been thermal annealed or not. We analysis the samples’ surface morphology and lattice structures with many different ways, such as atomic force microscope, scanning electron microscope, reflection high energy electron diffraction,transmission electron microscope, X-ray diffraction analysis and transmission spectrum measurement. From the results of SEM and AFM,while the N/In ratio increased for the process of epitaxy, InN thin film’s surface would become much smooth but accompany some pin holes on the surface which indicates that there exist the interaction between substrate and InN thin film. In the X-ray diffraction analysis, the greatest value of Full Width at Half Maximum (FWHM) we get is 94.44 (arcsec) to the (0002) surface of InN that confirm pretty high quality of InN thin film grown on O-polar ZnO substrate have been made. Furthermore, the band gap measured by transmission spectrum is wider for the N/In ratio increasing either which may be caused by the formation of InxNyOz.

中文摘要………………………………………………………1
英文摘要………………………………………………………2
第一章 簡介………………………………………………………3
1-1 前言……………………………………………………………3
1-2 氮化銦的重要特性……………………………………………4
1-3 氮化銦的發展…………………………………………………7
第二章 儀器原理 …………………………………………………9
2-1 原子力顯微鏡………………………………………………9
2-2 掃描式電子顯微鏡……………………………………………13
2-3 穿透式電子顯微鏡……………………………………………17
2-4 X-ray繞射分析………………………………………………20
2-5 反射式高能電子繞射…………………………………………23
2-6 穿透光譜量測…………………………………………………25
第三章 儀器介紹與操作步驟……………………………………26
3-1 原子力顯微鏡…………………………………………………26
3-1-1 儀器介紹…………………………………………………26
3-1-2 操作步驟…………………………………………………28
3-2 雙晶薄膜 X 光繞射儀………………………………………32
3-2-1 儀器介紹………………………………………………32
3-2-2 操作步驟………………………………………………34
第四章 實驗結果與分析…………………………………………40
4-1 樣品基板分析………………………………………………40
4-1-1 相同溫度熱退火 ZnO 基板……………………………40
4-1-2 不同溫度熱退火 ZnO 基板………………………………43
4-2 樣品分析……………………………………………………46
4-2-1 樣品介紹………………………………………………46
4-2-2 InN 成長在無熱退火基板上表面形貌分析……………47
4-2-3 X-ray 繞射分析………………………………………51
4-3 基板經過熱退火對樣品結構的分析比較…………………54
4-3-1 InN 成長在有熱退火基板上表面形貌分析…………54
4-3-2 X-ray 繞射分析…………………………………………58
4-4 穿透式電子顯微鏡分析……………………………………59
4-5 能隙分析…………………………………………………….67
第五章 結論………………………………………………………71
參考資料…………………………………………………………72

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