臺灣博碩士論文加值系統

利用STM，本研究工作探討，由於晶格不匹配導致在矽(111)上成長氮化鎵的薄膜之缺陷的相關形貌及電性產生，因而對表面的電性之影響。在本研究中，氮化鎵薄膜中的刃差排(Edge dislocation)和螺旋差排(Screw dislocation) 可以成功地從STM形貌圖上被觀察到。同時，利用STM發現在有缺陷的區域能隙比沒有缺陷區域的能隙小，區域能態密度(LOCAL DENSITY OF STATES) 也會因為缺陷的存在而有所改變。將缺陷視為一散射中心(scattering senter)，從STM的電流對偏壓的微分(dI/dV) 與量測距離之關係，缺陷所能影響的特徵散射長度(characteristic scattering length)即可得。

The electronic properties of the defects of the GaN/Si(111) system has been successfully measured by STM in the work. Different types of the dislocations in GaN films, such as edge dislocations and screw dislocations, have been observed. Defects induce the change of the band gap from 3.4 eV to 2.2 eV. The characteristic scattering length of the edge dislocation is around 25 nm.

致謝.....................................................i
中文摘要.................................................ii
英文摘要.................................................iii
目錄.....................................................iv
圖片索引.................................................v
第一章：緒論.............................................1
第二章：實驗原理.........................................3
2.1 量子穿隧效應.......................................3
2.2 區域能態密度(Local density of state，
LODS) .............4
2.3 掃描模式...........................................5
第三章：實驗儀器與步驟...................................10
3.1 儀器介紹...........................................10
3.2 超高真空系統.......................................11
3.3 STM掃描系統.......................................15
3.4 樣品製備...........................................19
第四章：實驗結果與討論...................................20
4.1 樣品資訊...........................................22
4.2 差排...............................................23
4.3 氮化鎵能隙 ........................................25
4.4 散射中心(scattering center)............................28
第五章：結論.............................................31
參考文獻.................................................32

[1] F. A. Ponce, J. S. Major, W. E. Plano, and D. F. Welch, Appl. Phys. Lett. 65, 2302 (1994).
[2] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T.Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998).
[3] L. Lee, C. S. Ku, W. C. Ke, C. W. Ho, H. Y. Huang, M. C. Lee, W. H.
Chen, W. C. Chou, and W. K. Chen, Jpn. J. Appl. Phys., Part 2 45, L817 (2006).
[4] X. A. Cao, J. A. Teetsov, F. Shahedipour-Sandvik, and S. D. Arthur, J. Cryst. Growth 264, 172 (2004).
[5] K. Shiojima and T. Suemitsu, J. Vac. Sci. Technol. B 21, 698 (2003).
[6] J.A. Kubby, and J. J. Boland, Surf. Sci. Rep. 26, 61 (1996).
[7]黃英碩,張嘉升,科儀新知, 21, 36(2000)。
[8] F. Besenbacher, Rep. Prog. Phys. 59, 1737(1996).
[9] http://www.omicron.de/, Omicron.
[10] P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory,
J. Jun,S.Porowski, P. Bogusławski, J. Bernholc, J. C. Chervin,
A.Polian, and T.D.Moustakas, Phys. Rev. Lett. 75, 296 (1995).
[11] H. Amano, T. Asahi and I. Akasaki, Jpn. J. Appl. Phys. 29, L205
(1990).
[12] S. Y. Huang and J. R. Yang, Jpn. J. Appl. Phys. 47,7998 (2008)
[13]D. Hull and D.J. Bacon, Introduction to Dislocations.
[14] J. Elsner, R. Jones, P. K. Sitch, V. D. Porezag, M.Elstner,
Th.Frauenheim, M. I. Heggie, S. Öberg, and P. R. Briddon, Phys. Rev. Lett. 79, 3672 (1997).
[15] Ph. Avouris, I.-W. Ryo, R. E. Walkup, and Y. Hasegawa, J. Vac.
Sci. Technol. B 12, 1447 (1994).
[16] K. Tomatsu, M. Yamada, K. Nakatsuji, F. Komori, B. Yan, C. Wang,
G. Zhou, and W. Duan, Phys. Rev. B 78, 081401(R) (2008).