本研究利用反應性磁控濺鍍法來濺鍍正型與負型氧化鋅薄膜，而氧化鋅，由於其高exiton binding energy (60 meV)及寬能帶(~3.4 eV)之特性，使其具有在室溫下發紫外光之能力。其純氧化鋅因為其本質缺陷和氧空缺關係導致一般都呈現負型。本實驗利用鋅靶材通入比例之氮氣與氬氣先成長氮化鋅，再藉由氧氣熱退火方法和利用氧化鋅鈀材通入比例的氮氣與氬氣的方法來研究氧氣熱退火溫度與氮氣混入之比例來使負型氧化鋅轉變為正型。在物性方面，藉由場效應電子顯微鏡(FESEM)來與XRD來探討氧化鋅薄膜在不同的參數下所得的結果，並利用化學分析電子光譜儀(ESCA)分析薄膜化學組態。在光學性質方面，藉由光致螢光光譜儀，分析在不同濺鍍參數下所得的薄膜之光激發光特性。

In this study, the reactive rf magnetron sputtering was used to deposit P- and N-type zinc oxide (ZnO) thin films, Zinc oxide (ZnO) has higher exiton bindingenergy (60 meV) and high band gap (~3.4 eV) that can provide efficient ultraviolet (UV) light at room temperature (RT). Intrinsic ZnO is thought to be N-type primarily because of donor defects such as zinc interstitials (Zni) and oxygen vacancies (VO). we want to prepared N-doped ZnO (ZnO:N) films, we used two method : Deposition Zn3N2 films by dc sputtering of Zn target in proportional Ar and N2 mixture. After deposition, it were thermally oxidized at difference temperatures to prepared N-doped ZnO (ZnO:N) films. And to make use of rf sputtering that ZnO target in proportional Ar and N2 mixture, to prepared N-doped ZnO (ZnO:N) films. The physical characteristics of ZnO thin films with different parameter were obtained by the analyses of field emission scanning electron microscopic (FE-SEM) and XRD. The electron spectroscopy for chemical analysis (ESCA) was used to analyze the chemical states of ZnO thin films. In optical properties, the photoluminescence spectrometer was used to measure the photoluminescence characteristics (PL).

Chapter 1 ...............................................................1
Introduction..........................................................................................................1
1.1 Introduction of Transparent Conductive Oxide thin films (TCO) ............1
1.2 Background and Properties of Zinc Oxide (ZnO) ......................................3
1.3 Applications of Zinc Oxide ZnO...................................................................5
1.4 Silicon substrate .............................................................................................8
1.5 Advantages of Sputtering ..............................................................................8
1.6 Motivation.......................................................................................................9
Reference ............................................................................................................13
Chapter 2 .............................................................19
Experiments........................................................................................................19
2.1 Sputtering System ........................................................................................19
2.1.1 Sputtering Technique........................................................................19
2.1.2 RF Sputtering ....................................................................................20
2.2 Deposition Procedures .................................................................................20
2.2.1 Cleaning Procedures for Si Wafer ...................................................20
2.3 Zinc Oxide Growth by Sputtering..............................................................21
2.3.1 ZnO Film Prepared with Zn Target by DC Sputtering.................21
2.3.2 ZnO Film Prepared with ZnO Target by RF Sputtering ..............21
2.4 Characteristics..............................................................................................22
2.4.1 Physical Properties............................................................................22
2.4.2 Chemical Properties..........................................................................23
2.4.3 Electrical Properties .........................................................................24
2.4.4 Optical Properties .............................................................................24
Reference ............................................................................................................32
Chapter 3 .............................................................33
Result and Discussion ........................................................................................33
3.1 Characteristics of ZnO Films by DC Power Sputtering with Zn Target..................33
3.1.1 The Influence of O2 Flow Rate for The Film Thickness ................33
3.2 Characteristics of N-doped ZnO (ZnO:N) Films by DC Power Sputtering with Zn Target ................................................................................33
3.2.1 The DC Power Sputtering Zn3N2 Thin Film and Oxidation.........33
3.2.2 The Surface Morphology and Structure Analysis of N-doped ZnO
(ZnO:N) Thin Films...................................................................................34
3.2.3 The Chemical Analysis of N-doped ZnO (ZnO:N) Thin Film .......34
3.2.4 The Electronic Measurement of The N-doped ZnO (ZnO:N) Thin
Film..............................................................................................................35
3.2.5 The Optical Properties of The N-doped ZnO (ZnO:N) Thin Film......36
3.3 Characteristics of ZnO Films by RF Power Sputtering with ZnO Target
..............................................................................................................................36
3.3.1 The Surface Morphology and Structure Analysis of ZnO Thin
Film for N2 Gas Flow Rate ........................................................................36
3.3.2 The Electronic Measurement of The ZnO Thin Film for N2 Gas
Flow Rate ....................................................................................................37
3.3.3 The Optical Properties of The ZnO Thin Film for N2 Gas Flow
Rate..............................................................................................................37
Reference ............................................................................................................59
Chapter4 ..............................................................60
Conclusion ..........................................................................................................60

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