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研究生:林宗瑋
研究生(外文):Tsung-wei Lin
論文名稱:低驅動電壓電容式微機電麥克風之開發
論文名稱(外文):Development of Low-driving-voltage Capacitive MEMS Microphone
指導教授:黃義佑
指導教授(外文):I-Yu Huang
學位類別:碩士
校院名稱:國立中山大學
系所名稱:電機工程學系研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:81
中文關鍵詞:低驅動電壓聚亞醯胺背板結構電容式微機電麥克風面型與體型微加工技術
外文關鍵詞:Low driving voltagePolyimide backplate microstructureSurface and bulk micromachining technologiesCapacitive MEMS microphone
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因應目前行動電話、筆記型電腦、助聽器及個人數位助理(PDA)等產品尺寸日漸縮減以及功能逐漸增強,傳統的駐極體電容式麥克風(Electret Condenser Microphone, ECM)將越來越無法滿足這些可攜式電子產品的需求,所以如何利用微機電系統(MEMS)技術,研發出具有可微型化、高品質與低成本等特性之微型麥克風已是勢在必行。
本論文運用面型與體型微加工之MEMS製程技術,完成一種具有聚亞醯胺背板(Polyimide backplate)結構之電容式MEMS麥克風的開發,其主要製程步驟包括五次黃光微影(Photolithography)與七次薄膜沉積的製程。本論文所設計之低應力氮化矽/多晶矽/氮化矽懸浮薄膜聲壓感測面積與麥克風上下電極間距分別為2×2 mm2與2 μm。
本論文開發之MEMS麥克風是在特殊的無響箱中量測其頻率響應,在音源頻率為1 kHz下,只須外加3伏特之偏壓即可獲得-60.3 dB/Pa的靈敏度(已扣除前級放大器的22.6 dB增益輸出)以及51 dB之訊雜比(Signal to noise ratio, SNR);以上所顯示之極低的驅動電壓、適中之訊雜比與聲壓感測靈敏度等特性,接近於國內外相關一流研究單位之成果。
To achieve the miniaturization and high performance of the mobile phone, notebook, hearing aid and personal digital assistant (PDA), many researchers focus on the developing a new-type microphone with very small dimension, high quality and low manufacturing cost utilizing MEMS technology.
By using the surface and bulk micromachining technologies, this thesis designed and fabricated a capacitive MEMS microphone with a polyimide bcakplate microstructure. The main processing steps adopted in this study include five photolithoghaphies and seven thin-film depositions. A MEMS-based microphone with an only 2×2 mm2 sensing area of the floating Si3N4/Poly-Si/Si3N4 membrane and a 2 μm-height gap distance between the top and bottom electrodes was implemented and characterized.
Measured in a special isolated-box and under 1 kHz audio frequency, a -60.3 dB/Pa sensitivity (deducted the 22.6 dB output gain of the pre-amplifier) and a 51 dB signal to noise ratio (SNR) of the implemented MEMS microphone can be obtained as the biasing voltage only about 3 volts. The very low driving voltage, moderate SNR and sensitivity demonstrated in this work keep abreast with the results of many outstanding research laboratories in the world.
摘要.............................................................................................................I
Abstract......................................................................................................II
誌謝..........................................................................................................III
目錄..........................................................................................................IV
圖目錄......................................................................................................VI
表目錄................................................................................................VIII
第一章 緒論..............................................................................................1
1-1 前言..............................................................................................1
1-2 研究動機......................................................................................4
第二章MEMS麥克風之原理介紹...........................................................6
2-1 MEMS麥克風之種類...................................................................6
2-1-1壓電式MEMS麥克風........................................................6
2-1-2壓阻式MEMS麥克風........................................................7
2-1-3電容式MEMS麥克風........................................................8
2-2 電容式MEMS麥克風之研究.....................................................9
2-2-1 理論分析.....................................................................11
2-2-2 聚亞醯胺材料特性.........................................................17
第三章 元件設計與製作流程................................................................23
3-1 電容式MEMS麥克風之光罩佈局設計...................................23
3-2 電容式MEMS麥克風之製程整合設計……...........................25
3-2-1 電容式MEMS麥克風製作流程....................................25
3-2-2 詳細製程步驟與參數......................................................27
第四章 結果與討論................................................................................35
4-1 結構分析........................................................................35
4-1-1 聚亞醯胺背板烘烤溫度分析.........................................35
4-1-2 鋁犧牲層釋放結構分析.................................................37
4-2元件特性分析......................................................................39
4-2-1 電容-電壓(C-V)量測.......................................................39
4-2-2 頻率響應量測.................................................................44
第五章 結論與未來展望........................................................................54
5-1 結論............................................................................................54
5-2 未來展望....................................................................................55
參考文獻..................................................................................................57
附錄..................................................................................................60
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