臺灣博碩士論文加值系統

本論文探討了微波電漿輔助化學氣相沈積（MPCVD）系統在n+(111)重摻雜矽基板上沈積P型鑽石薄膜和N型鑽石薄膜的PN接面元件製作。P型鑽石薄膜以B（OCH3）3 為摻雜源，而N型鑽石薄膜以氨氣為摻雜源，利用掃描式電子顯微鏡（SEM）觀察鑽石薄膜表面結構，電流-電壓（I-V）量測分析PN接面鑽石薄膜整流特性，陰極螢光光譜(CL)量測發光材料的發光波長光譜、缺陷分析，以及霍爾量測分析載子的漂移率和載子濃度。在本論文中成功製作，以N型鑽石薄膜為底層結構，P型鑽石薄膜為頂層結構的樣品，於真空中接續成長PN接面鑽石薄膜，在I-V特性上觀察到順向起始電壓為0.5 V，逆向崩潰電壓6V，由I-V量測得知確認PN接面之整流特性，進一步再由CL光譜分析上觀察發現一發光波峰在285 nm (4.4 eV)，為施體-受體之間的復合所產生的CVD鑽石的能帶特性峰，以及一500 nm(2.5 eV)波峰的鑽石缺陷特性峰。

This work has employed the Micro-wave Plasma enhanced Chemical Vapor Deposition (MPCVD) method to fabricate diamond PN junction device. The n+ <111> orientation single-crystal silicon has used as substrates. P-type diamond layer is doped with B(OCH3)3 and the N-type diamond layer is doped with ammonia. The surface structure of diamond film has been observed by scanning electron microscope; and the device rectification property of a PN junction has measured by current-voltage characteristic. The carrier density and mobility of diamond films have been analyzed by Hall measurement. Furthermore, the Cathodoluminescence (CL) spectroscopy showed the defect spectra in diamond PN junction. The N-type diamond film and P-type diamond film have deposited at temperature of 800 ℃, for 30 minutes and 90 minutes, respectively. The process CVD has performed in the same chamber continually. A I-V curve of sample showed the set on positive voltage 0.5 V and the reverse breakdown voltage of 6 V. Further, CL results revealed a peak at 285 nm (4.4 eV), which represents the CVD diamond band and the other one is at 500 nm (2.5 eV), which stands for donor-acceptor recombination from defect in these diamond films.

中文摘要 I
Abstract II
目錄 III
表目錄 VI
圖目錄 VII
第 一 章 緒 論 1
第 二 章 P-N鑽石接面文獻回顧 3
2-1 摻雜氮和硼之鑽石薄膜 3
2-2 金屬/鑽石膜接觸 4
2-2.1 歐姆接觸( Ohmic Contact ) 4
2–2.2 整流接觸( Rectify Contact ) 5
2-3 霍爾效應 6
2-4 鑽石薄膜之電性 8
2-4.1 鑽石膜之負電子親和力特性 8
2-4.2 表面結構與電傳導特性之關係 8
2-4.3 硼摻雜鑽石膜之電傳導特性 9
2-4. 4 鑽石於半導體元件上之應用 9

第 三 章 研究方法與實驗步驟 11
3-1 實驗方法 11
3-1.1 微波電漿輔助化學氣相沈積 ( MPCVD )系統 11
3-1.2 鑽石薄膜沈積原料 12
3-2 實驗步驟 12
3-2.1 基材之前處理 12
3-2.2 實驗條件 12
3-2.3 實驗操作步驟 12
3-2.4 金屬電極製作 13
3-3 薄膜性質分析 14
3-3.1 掃瞄式電子顯微鏡 14
3-3.2 電流-電壓量測儀 15
3-3.3 陰極發光(Cathodoluminescence ，簡稱CL) 15
第四章 結果與討論 18
4-1 N型鑽石薄膜的成長 18
4-1.1不同偏壓和溫度影響 18
4-1.2不同沈積時間影響 18
4-1.3 不同流量影響 19
4-1.4 鑽石薄膜室溫霍爾量測結果 19
4-2 P型鑽石薄膜特性分析 20
4-2.1 不同摻雜濃度 20
4-2.2 不同沈積時間 20
4-2.3 鑽石薄膜室溫霍爾量測結果 21
4-3 PN 接面鑽石薄膜特性分析 21
4-3-1 Sample A / PN接面鑽石薄膜電傳導特性分析 22
4-3-2 Sample B / PN接面鑽石薄膜電傳導特性分析 23
4-3-3 展望 25
第五章 結論 26
參考文獻 27

[1] Y. Tzeng, M. Yoshikawa, M. Murakawa, and A. Feldman, “Applications of diamond films and related materials”, Materials & Design, 73, (1992), pp.60.
[2] Takayuki Toyama, Yasuo Koide, Masanori Murakami, “Field emission of polycrystalline diamond films grown by microwave-plasma chemical vapor deposition. I. Effects of surface morphology of diamond”, Diamond and Relat Mater , 11, (2002), pp.1897–1904.
[3] J.F. Prins, “Bipolar transistor action in ion implanted diamond”, Appl. Phys.Lett, 41, (1982), pp.950-952.
[4]劉宗憲,滲氮鑽石薄膜研究,國立中山大學碩士論文(2004)
[5]邱安平,利用光電子發射技術研究氮和硼摻雜之鑽石薄膜, 淡江大學碩士論文(2001)
[6] C.A.Mead and W.G.Spitzer, “Fermi Level Position at Metal- Semiconductor Interfaces” , Phys.Rev ,134 , (1964), pp.713-716.
[7] Matthias Werner, Otto Dorsch, Hans-Ulrich, Baerwind, Emst Obermeier,Colin Johnston, Paul R. Chalker, and Simon Romani, “The Effect of Metallization on the Ohmic Contact Resistivity to Heavily B-Doped Polycrystalline Diamond Films”, IEEE Trans. Electron Devices, 42, (1995), pp.1344-1351.
[8] T. Tachihana, B. E. Williams and J. T. Glass, “Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond-interface.II Titanium contact:A carbide-forming metal.”, Phys.Rev., 45, (1992) , pp.975-981.
[9] Hiromu shiomi, Hideaki Nakahata, Takahiro Imal, Yshiki Nishibay Ashi and Naoji Fujimori, “Electrical characteristics of metal contacts to boron-doped diamond epitaxial film ”, Japanese Journal Appl phys, 28, (1989) , pp.758-762.
[10] Yusuke Mori, Hiroshi Kawarada, and Akio Hiraki, “Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface”, Appl. Phys Lett, 58, (1991) , pp.940-941.
[11] John Bardeen, “Surface States and Rectification at a Mtal”, Phys.Rev. ,71, (1947) , pp.717-727.
[12]K. Nishimura, K. Das and J. T. Glass, “Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition”, J. Appl. Phys, 69, (1991) , pp.3142-3148.
[13] G. Sh. Gildenblat, S. A. Grot, C. W. hatfield, and A. R. Badzian, “High-Temperature Thin-Film Diamond Field-Effect Transistor Fabricated Using a Selective Growth Method”, IEEE Electron device Letters, 12, (1991), pp.37-39.
[14] K. Ikeda, H. Umezawa, S. Shikata, “Edge termination techniques for p-type diamond Schottky barrier diodes”, Diamond & Related Materials, 17, (2008) , pp.809–812.
[15] 施敏,半導體元件物理與製作技術,國立交通大學出版社,(2002) ,第二版
[16]S.P. Bozeman, P.K.Ward, M.J.Powers, J.J.Cuomo, R. J. Dreifus, “Electron emission measurements from CVD diamond surface”,Diamond and Relat Mater, 5, (1996) , pp.802-806.
[17]C. Jany, F.Foulon, P.Bergonzo, A.Brambilla, F.Silva, A.Gicquel, T.Pochet, “Influence of the crystalline structure on the electrical properties of CVD diamond films” Diamond and Relat Mater, 5 , (1996) , pp.741-746.
[18] M. Aslam, I. Taher, and A. Masood, M. A. Tamor and T. J. Potter, “Piezoresistivity in vapor-deposited diamond films”, Appl. Phys. Lett, 60, (1992) , pp.2923-2925.
[19] X.Z. Liao, R.J.Zhang, C.S.Lee, S.Tong Lee, Y.W.Lam, “The influence of boron doping on the structure and characteristics of diamond thin films”, Diamond and Relat Mater, 6, (1997) , pp.521-525.
[20]Chia. Fu. Chen, Sheng Hsiung Chen, “Electrical properties of boron-doped diamond films after annealing treatment”, Diamond and Relat Mater,4 , (1995) , pp.451-455.
[21] K. Okano, Ken Okano, Hideo Kiyota, Tatsuya Iwasaki, Tateki Kurosu, Masamori lida and Terutaro Nakamura , “p-n junction diode made of semiconducting diamond films” , Appl Phys. Lett, 58, (1991) , pp.840-841.
[22]楊志清, 多晶鑽石薄膜金屬絕緣半導體場效電晶體之製作與特性研究, 國立中山大學碩士論文(1999)
[23] Dieter K. Schroder, Semiconductor Material and Device Characterization, John Wiley & Sons Inc, (1990) ,New York.
[24] 劉恩科，朱秉升，羅晉升，半導體物理學，新文京出版社，2004，第六版
[25] Satoshi Koizumi, Kenji Watanabe, Masataka Hasegawa, Hisao Kanda1, “Ultraviolet Emission from a Diamond pn Junction” , Science ,292, (2001) , pp.1899-1901.