臺灣博碩士論文加值系統

近年來薄膜的特性已成為熱門的研究議題，亦有針對利用薄膜堆疊數百層後而製程的結構，探討其相關特性及應用等等。以積層陶瓷電容(Multi-layer Ceramic Capacitor, MLCC)為例，源係由一層介電陶瓷薄膜、一層電極薄膜，兩者交互相疊而成之數百層結構，其具有體積小，但電容量可以隨著陶瓷堆疊的層數及面積而增加，及生產速度快的優點，使其成為組成3C產品的必要被動元件之零件產品。
陶瓷薄膜與電極薄膜疊層後會受一均壓作用，再進行燒結。本文主要在探討積層陶瓷電容受均壓後之變形與應力分佈情形，將變形與應力之數值輸出並統整成表格，提供往後相關研究之參考依據。本文所使用的研究理論方法為有限元素法，並使用有限元素模擬分析軟體ANSYS來進行實體模型之建構，將其網格分割後，設定邊界條件並進行求解。
本文模擬出積層陶瓷電容受到垂直均佈壓力、傾斜均佈壓力與梯度均佈壓力後之變形與應力分佈情形，並改變材料之楊氏模數，模擬不同材料受壓之情形，其中垂直均佈壓力與傾斜均佈壓力並非導致積層陶瓷電容側邊變形之主因，將負載條件更改為梯度均佈壓力後，可模擬出符合積層陶瓷電容受壓後側邊之實際變形狀況。

The mechanical and electrical properties of thin films have been become important and urgent in recent years, especially, the laminated structure made by films stacked over hundreds of layers. For example, the Multi-Layered Ceramic Capacitors (MLCCs) are such structures fabricated by one layer ceramic film interleaves with one layer electrode film repeatedly a hundred times. Thus, the advantages of MLCCs include small volume, mass product, and high capacity. That makes the MLCCs the necessary part of passive components.
The Finite element method is adopted in the study. The model is built by the simulation program of ANSYS. After meshing and setting boundary conditions, the numerical process is performed.
The numerical simulation was started first by applying a uniformly distributed pressure on the top of near hundred layers of MLCCs before sintering process with the bottom plate fixed. Then, the displacement and stress fields of MLCCs under five pressures were obtained and discussed. In order to visualize the results, the data of displacement and the stress fields were listed in Tables and plot in Figures.
In addition to the MLCCs under vertically and uniformly distributed pressure, the slightly slant distributed pressure and gradient distributed pressure had been simulated. Next, the results of changing Young’s modulus had also been received. It is found that the vertical distributed pressure and slant distributed pressure were not the main factor led to the side deformation. The lateral constraint of gradient distributed pressure would influence the deformation of the MLCCs significantly.

目次..................................................................................................... I
表目錄.............................................................................................. IV
圖目錄.............................................................................................. VI
中文摘要.......................................................................................... XI
英文摘要.........................................................................................XII
第1 章 緒論.......................................................................................1
1-1 研究動機與目的......................................................................1
1-2 積層陶瓷電容之簡介..............................................................3
1-3 文獻回顧..................................................................................7
1-4 全文概述..................................................................................9
第2 章 研究理論.............................................................................12
2-1 有限元素法............................................................................12
2-2 結構分析之矩陣方法............................................................13
2-3 線性元素................................................................................15
第3 章 實驗工作.............................................................................22
3-1 奈米壓痕法之簡介................................................................22
3-2 儀器設備與材料....................................................................25
3-3 儀器操作流程........................................................................25
3-3-1 試片之放置.....................................................................25
3-3-2 軟體操作步驟.................................................................26
3-3-3 模式設定.........................................................................27
3-4 結果與討論............................................................................30
第4 章 有限元素模型與分析流程.................................................47
4-1 前言.........................................................................................47
4-2 基本假設................................................................................48
4-3 元素種類................................................................................48
4-4 有線元素模型之建構............................................................50
4-5 邊界與負載條件之設定........................................................52
4-6 模擬流程................................................................................53
4-7 後處理分析............................................................................54
4-8 收斂性分析............................................................................56
第5 章 分析結果與討論.................................................................68
5-1 垂直壓力作用之分析............................................................68
5-1-1 分析說明.........................................................................68
5-1-2 分析結果與討論.............................................................69
5-2 傾斜壓力作用之分析............................................................75
5-2-1 分析說明.........................................................................75
5-2-2 分析結果與討論.............................................................76
5-3 梯度壓力作用之分析............................................................79
5-3-1 分析說明.........................................................................79
5-3-2 分析結果與討論.............................................................80
5-4 改變楊氏模數之分析............................................................81
5-4-1 分析說明.........................................................................81
5-4-2 分析結果與討論.............................................................82
第6 章 結論與未來展望...............................................................125
6-1 結論.......................................................................................125
6-2 未來展望..............................................................................126
參考文獻.........................................................................................128
附錄.................................................................................................132

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