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[1]Schuler T., Aegerter M.A., “Optical, Electrical and Structural Properties of Sol Gel ZnO:Al Coatings”, Thin Solid Films, 351, 125-131 , 1999. [2]Govender K., Boyle D.S., O’Brien P., Binks D., West D., Coleman D., “Room-Temperature Lasing Observed from ZnO Nanocolumns Grown by Aqueous Solution Deposition”, Advanced Materials, 14, 1221-1224 , 2002. [3]Bao D., Gu H., Kuang A., “Sol-gel-derived c-axis oriented ZnO thin films”, Thin Solid Films, 312, 37-39 , 1998. [4]Abdullah M., Lenggoro I.W., Okuyama K., “In situ Synthesis of Polymer Nanocomposite Electrolytes Emitting a High Luminescence With a Tunable Wavelength”, J. Phys. Chem. B, 107, 1957-1961 , 2003. [5]Wu J., Xie C., Bai Z., Zhu B., Huang K., Wu R., “Preparation of ZnO-Glass Varistor from Tetrapod ZnO Nanopowders”, Materials Science and Engineering, B95, 157-161, 2002. [6]Base, Jr. C.F., Mesmer, R.E., “The Hydrolysis of Cations”, Krieger Pub., Florida, USA , 1986. [7]Bahnemann D.W., Kormann C. and Hoffmann M.R., “Preparation and Characterization of Quantum Size Zinc Oxide: a Detailed Spectroscopic Study”, J. Phys. Chem., 91, 3789-3798, 1987. [8]Blus L., “Electronic Wave Functions in Semiconductor Clusters: Experiment and Theory”, J. Phys. Chem, 90, 2555-2560 , 1986. [9]Oskam G., Hu Z., Penn R.L., Pesika N., Searson P.C., “Coarsening of Metal Oxide Nanoparticles”, Phys. Rev. E, 66, 011403 , 2002. [10]Wong E.M., Bonevich J.E., Searson P.C., “Growth Kinetics of Nanocrystalline” [11]K. Zosel and Angew, “Separation with supercritical gases: Practical applications”, Chem. Int. Ed. Engl., vol. 17, no. 10, pp. 702-709, 1978. [12]P. M. F. Paul and W. S. Wise, “The principles of gas extraction”, London: Mills&Boon Ltd., 1971. [13]J. F. Brennecke and C. A. Eckert, “Phase equilibria for supercritical fluid process design”, AIChE Journal, vol. 35, no. 9, pp. 1049-1427, 1989. [14]J. B. Rubin et al., “A comparison of chilled DI water/ozone and CO2-based supercritical fluids as replacements for photoresist-stripping solvents”, IEEE/CPMT Int''l Electronics Manufacturing Tech Sym., pp. 308-314, 1998. [15]L. B. Rothman, R. J. Robey, M. K. Ali, and D. J. Mount, “Supercritical fluid processes for semiconductor device fabrication”, IEEE/SEMI Adv. Semiconductor Manufacturing Conf., pp. 372- 375, 2002. [16]W. H. Mullee, M. A. Biberger, and P. E. Schilling, United States Patent, Patent 6500605 B1, 2002. [17]J. W. King, L. L. Williams, “Utilization of critical fluids in processing semiconductors and their related materials”, Current Opinion in Solid State and Materials Sci., vol. 7, no. 4-5, pp. 413-424, 2003. [18]W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N. S. Lee, G. S. Park, J. M. Kim, “Fully sealed, high-brightness carbon-nanotube field-emission display”, Appl. Phys. Lett., vol. 75, no. 20, pp. 3129-3131, 1999. [19]J. L. Kwo, M. Yokoyama, W. C. Wang, F. Y. Chuang, I. N. Lin, “Characteristics of flat panel display using carbon nanotubes as electron emitters”, Diamond Relat. Mater., vol. 9, no. 3-6, p.1270-1274, 2000. [20]Y. Cheng and O. Zhou, “Electron field emission from carbon nanotubes”, Comptes Rendus Physique, vol. 4, no. 9, pp. 1021-1033, 2003. [21]E. Kondoh, M. R. Baklanov, H. Bender, K. Maex, “Structural change in porous silica thin film after plasma treatment”, Electrochem. and Solid-State Lett., vol. 1, no. 5, pp. 224-226, 1998. [21]M. Z. Yates, D. L. Apodaca, M. L. Campbell, E. R. Birnbaum, T. M. McCleskey, “Micelle formation and surface interactions in supercritical CO2. Fundamental studies for the extraction of actinides from contaminated surfaces”, Chem. Commun. (Cambridge), 2001. [22]Kim, S. and Johnston, K. P., “Supercritical fluids”, T. G. Squires and M. E. Paulaitis, Eds., ACS Symposium Series, vol. 329, p. 42-55, 1987. [23]Lee, M. L. and Markides, K. E., Eds., “Analytical supercritical fluid chromatography and extraction”, Chromatography Conferences, Inc., Provo, UT, 1990. [24]C. H. Lee, S. H. Hur, Y. C. Shin, J. H. Choi, D. G. Park, and K. Kim, “Charge-trapping device structure of SiO2/SiN/high-k dielectric Al2O3 for high-density flash memory”, Appl. Phys. Lett., vol. 86, no. 15, pp. 152908, 2005. [25]K. Cherkaoui, A. Negara, S. McDonnell, G. Hughes, M. Modreanu, and P. K. Hurley, “Electrical properties of HfO2 films formed by ion assisted deposition”, Intern. Conf. on Microelectronics, pp. 351-354, 2006. [26]Q. Fang, J. Y. Zhang, Z. M. Wang ,J. X. Wu, B. J. O’Sullivan, P. K. Hurley, T. L. Leedham, H. Davies ,M. A. Audier ,C. Jimenez ,J. P. Senateur , and I. W. Boyd, “Characterisation of HfO2 deposited by photo-induced chemical vapour deposition”, Thin Solid Films, vol. 427, no. 1-2, pp. 391-396, 2003. [27]M. Liu, Q. Fang, G. He, L. Q. Zhu, and L. D. Zhang, “Characteristics of HfOxNy thin films by rf reactive sputtering at different deposition temperatures”, J. Appl. Phys., vol. 101, no. 3, pp. 034107, 2007.
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