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研究生:廖士霆
研究生(外文):Liao, Shih-Ting
論文名稱:矽晶太陽電池製作與特性分析
論文名稱(外文):Silicon Solar Cell Fabrication and Characteristics Analysis
指導教授:甘炯耀
指導教授(外文):Gan, Jon-Yiew
學位類別:碩士
校院名稱:國立清華大學
系所名稱:材料科學工程學系
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:74
中文關鍵詞:矽晶太陽電池模擬
相關次數:
  • 被引用被引用:18
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  • 下載下載:235
  • 收藏至我的研究室書目清單書目收藏:3
隨著非再生能源的大量開發消耗,再生能源發展速度也不斷的提升,其中以太陽電池最為顯著。專家預測在太陽電池產業中,矽晶太陽電池在未來20年之內仍為市場主流。本研究旨在開發一套有系統的分析流程方法,來解構矽晶太陽電池元件參數。
由於製作成本便宜結構簡單,本研究中採用網印太陽電池結構。實際元件參數可從製作及量測中獲得。為了減少影響效率的分析變因,先利用Mathematica作數值分析,將元件分成理想元件及三個寄生元件(series resistance、shunt resistance及parasitic diode)的等效電路,擬合量測所得的J-V曲線特性。萃取出理想元件參數後,將元件參數及實驗量測數據,藉由光伏元件模擬軟體PC1D擬合量測EQE數據,找出影響理想元件效率表現的三個主要因子(FSRV、BSRV及bulk lifetime),與理想J-V曲線特性比對並確認參數。最終以合理參數預測理想元件效率表現。
元件效率表現VOC=0.612 V、JSC=36.93 mA/cm2、FF=75.12 %及η=17 %。分析結果可獲得影響元件效率表現的六大因子RS=1.04Ωcm2、RSH=709.2Ωcm2、Jo2=6x10-8 A/cm2、τB=112 μs、BSRV=200 cm/s及FSRV=4x105 cm/s。其中以Jo2對元件影響最大,若以有效的製程控制將上述非理想因子排除,在不額外增加製作成本的條件下,可預測理想化元件效率表現VOC=651 mV、JSC=38.37 mA/cm2、FF=83.4 %及η=20.83 %。
本研究最終開發出一套系統化分析流程,除了有效解構出太陽電池元件參數外,還提供元件製程改良的參考指標,這對矽晶太陽電池發展有相當重要的衝擊,若能有明確的發展方向將元件表現發揮到極致,在材料成本昂貴的情形下,不僅減少材料及研發成本,更能減少製作材料浪費減少對環境的衝擊。
摘要.. …………………………………………………………………………………I
目錄 ……………………………………………………………………………..…II
表目錄………….. ........................................................................................................ IV
圖目錄 ………………………………………………………………………………..V
第一章 簡介與動機 ...................................................................................................... 1
1-1前言 .................................................................................................................. 1
1-2研究動機 .......................................................................................................... 3
第二章 文獻回顧 .......................................................................................................... 5
2-1太陽電池運作原理 .......................................................................................... 5
2-2能量轉換影響因子 .......................................................................................... 8
2.2.1效率極限 ............................................................................................... 9
2.2.2元件效率損失因子 ............................................................................. 10
2-3各類型太陽電池發展現況 ............................................................................ 13
2-4矽晶太陽電池基礎理論 ................................................................................ 14
2.4.1 p-n接面二極體 ................................................................................... 14
2.4.2產生與覆合(Generation and Recombination) ..................................... 15
2-5矽晶太陽電池結構種類 ................................................................................ 17
2.5.1點狀電極太陽電池(Point contact solar cells) .................................... 18
2.5.2射極層鈍化及背面局部擴散太陽電池 (Passivated emitter and rear local diffused solar cells PERL) ......................................................... 18
2.5.3異質接面太陽電池 (Hetero-junction intrinsic thin film solar cells HIT) ............................................................................................................ 19
2.5.4網印太陽電池(Screen-printed solar cells) .......................................... 19
2-6文獻元件效率表現 ........................................................................................ 20
2-7元件特性分析 ................................................................................................ 21
2.7.1 J-V或I-V曲線擬合 ............................................................................ 21
III
2.7.2 QE擬合 ............................................................................................... 24
第三章 矽晶太陽電池製作與量測 ............................................................................ 28
3-1矽晶太陽電池元件製作 ................................................................................ 29
3-2矽晶太陽電池量測 ........................................................................................ 37
3.2.1 電性量測 ............................................................................................ 38
3.2.2 光學量測 ............................................................................................ 39
3.2.3薄膜特性量測 ..................................................................................... 44
第四章 元件特性分析與模擬 .................................................................................... 47
4-1實際元件特性分析 ........................................................................................ 48
4-2 理想元件特性分析 ....................................................................................... 54
4.2.1內部反射率(Internal reflectance) ........................................................ 55
4.2.2背面覆合速率(Back surface recombination velocity BSRV) ............. 57
4.2.3正面覆合速率(Front surface recombination velocity FSRV) ............. 58
4.2.4抗反射層吸收 ..................................................................................... 58
4.2.5擬合程序整理 ..................................................................................... 59
4.2.6擬合結果討論 ..................................................................................... 61
4-3 EQE轉換IQE ............................................................................................... 62
4-4元件參數對效率表現影響 ............................................................................ 63
4-5 誤差值估算 ................................................................................................... 65
4-6 模擬結果討論 ............................................................................................... 66
第五章 結論 ................................................................................................................ 72
文獻回顧 ...................................................................................................................... 73
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13 SANYO Electric Co,Ltd. Global,http://sanyo.com/
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22 SEMILAB, WT-2000 manual
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