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研究生:黃泊諺
研究生(外文):Po-yen Huang
論文名稱:電路板接地寄生效應對WiMAX低雜訊放大器RFIC之影響
論文名稱(外文):PCB Ground-Parasitic Effects on a WiMAX LNA Chip
指導教授:李世明李世明引用關係吳建銘吳建銘引用關係
指導教授(外文):Simon Cimin LiJian-Ming Wu
學位類別:碩士
校院名稱:國立臺南大學
系所名稱:通訊工程研究所碩士班
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:97
語文別:中文
論文頁數:40
中文關鍵詞:電路板接地寄生效應低雜訊放大器全球互通微波存取系統
外文關鍵詞:Worldwide Interoperability for Microwave Accessprinted circuit board (PCB)ground-parasitic effectsLow Noise Amplifier (LNA)
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本論文主要探討電路板(Printed Circuit Board,PCB)上之接地寄生效應對全球互通微波存取(Worldwide Interoperability for Microwave Access, WiMAX)系統 2.6 GHz低雜訊放大器RFIC之影響。以WiMAX通訊系統為應用,介紹射頻接收機對於低雜訊放大器,規格的要求,而我們使用台積電(Taiwan Semiconductor Manufacturing Company,TSMC)所提供0.35-μm SiGe BiCMOS 製程設計WiMAX低雜訊放大器RFIC,晶片面積為0.84 mm × 0.18 mm ,供應電壓為3V,消耗功率等於33.6 mW。考量電路板接地寄生效應的部分,我們粹取接地的寄生效應並且模型化。電路板接地寄生效應,呈現源極退化的現象,造成WiMAX低雜訊放大器RFIC的雜訊指數惡化0.5 dB以及增益下降2.8 dB。
This thesis presents the printed circuit board (PCB) ground-parastic effects on the figure of merit of a low noise amplifier (LNA) Chip for worldwide interoperability for Microwave access(WiMAX) applications. The LNA RFIC is fabricated in 0.35-μm standard SiGe BiCMOS foundry process. The chip size is equal to 0.84 mm × 0.18 mm.The power consumption is 33.6 mW from the supply voltage of 3V.The ground-parasitic effects act as the source degeneration in the proposed WiMAX LNA and cause the degradation in noise figure (NF) and gain by 0.5 dB and 2.8 dB, respectively.
摘要..........................................i
ABSTRACT.....................................ii
致謝........................................iii
目錄.........................................iv
圖目錄........................................v
表目錄......................................vii
第一章 緒論...................................1
1-1WiMAX發展背景..........................1
1-2應用於WiMAX接收機低雜訊放大器..........2
1-3封裝與電路板的寄生效應.................6
1-4章節介紹...............................8
第二章 低雜訊放大器...........................9
2-1設計規格...............................9
2-1-1穩定度..........................9
2-1-2反射損耗.......................10
2-1-3增益...........................11
2-1-4雜訊指數.......................12
2-1-5線性度.........................14
2-2電路架構..............................17
2-2-1共源極架構.....................17
2-2-2共閘極架構.....................18
2-2-3差動式架構.....................19
2-2-4疊接架構.......................20
2-2-5電流重複使用架構...............21
2-2-6串接架構.......................21
2-2-7折疊架構.......................22
2-2-8直接耦合架構...................23
第三章 WiMAX低雜訊放大器RFIC設計.............24
3-1矽鍺製程技術.........................26
3-2電路設計與實作.......................28
3-3電路板接地寄生效應之萃取與模型化.....31
3-4模擬與量測結果討論...................35
第四章 結論..................................37
參考文獻.....................................39
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