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研究生:薛群達
研究生(外文):Shiue Chiun Da
論文名稱:相變化薄膜光熱效應奈米微影
論文名稱(外文):Nanolithography by Opto-thermal Effect of Phase-change Thin Film
指導教授:蔡定平
指導教授(外文):Din Ping Tsai
學位類別:碩士
校院名稱:國立臺灣師範大學
系所名稱:光電科技研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:87
中文關鍵詞:相變化材料靜態測試儀原子力顯微儀濕式蝕刻
外文關鍵詞:phase-change materialoptical pump-probe systematomic force microscopywet-etching
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  • 被引用被引用:1
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本論文主旨在於研究不同膜層結構的相變化材料對鹼性溶液之蝕刻特性。利用萊卡光譜儀與表面輪廓儀來量測薄膜蝕刻後之光學與物理性質,並使用波長658nm之紅光雷射泵探系統(靜態測試儀)製作樣品。經過溶液蝕刻後,由原子力顯微儀(Atomic Force Microscope)對記錄點進行掃探所得到的表面形貌資訊,來研究不同膜層結構相變化薄膜之記錄點型態。並可充分且完整的了解相變化材料在光熱作用與濕式蝕刻下之變化。將來可應用於奈米微影技術,用以取代昂貴的半導體製程技術。
In this thesis, we study the selective etching properties between as-deposited and crystalline phase of Ge2Sb2Te5 alloy film carried out with an alkaline etching solution of NaOH. The optical and physical properties of the thin films before and after etching are measured by Lycra spectrometer and surface profile. And we use the optical pump-probe system and atomic force microscopy (AFM) to manufacture the sample and investigate the topographic change. Through the complete experiments, results showed the etching of the crystalline film is fast than the as-deposited Ge2Sb2Te5 film. The disordered amorphous region acts as an resistant mask. A novel high throughput and low cost nanolithography method is developed by the Ge2Sb2Te5 phase-change masking thin films. The special Opto-thermal effect of phase-change material can be applied to the Nanolithography in the future.
第一章、 緒論 1
1-1 前言 1
1-2 相變化材料 1
1-2-1 相變化過程 1
1-2-2 結晶過程類型 4
1-2-3 相變化材料演進 5
1-2-4 相變化材料Ge2Sb2Te5結構 6
第二章、 儀器設備及基本原理 12
2-1 前言 12
2-2 四靶濺鍍機 12
2-2-1 儀器簡介及用途 12
2-2-2 樣品製作參數 14
2-3 靜態測試儀 15
2-3-1 儀器簡介及用途 15
2-3-2 儀器架構與元件介紹 15
2-3-2-1 儀器架構 15
2-3-2-2 雷射光泵探系統主要光學元件介紹(依照光路順序排列) 17
2-3-2-3 校正工作(calibration) 21
2-3-2-4 雷射光初始化樣品的方法 21
2-3-2-5 光學寫入實驗流程 22
2-4 原子力顯微鏡 25
2-4-1 儀器簡介及用途 25
2-4-2 工作操作模式 26
第三章、 樣品製作與實驗結果討論分析 28
3-1 前言.. 28
3-1-1 實驗樣品參數 28
3-1-2 實驗結果 30
3-1-2-1 相變化薄膜之蝕刻率研究 30
3-1-2-2 初鍍態相變化薄膜實驗結果 35
3-1-2-2-1 實驗流程 35
3-1-2-2-2 記錄點分類 (CCD影像圖) 36
3-1-2-2-3 蝕刻前後AFM表面形貌比較 39
3-1-2-2-3 改變蝕刻條件實驗 48
3-1-2-2-4 結論 49
3-1-2-3 結晶態相變化薄膜實驗結果 51
3-1-2-3-1 記錄點分類 (CCD影像圖) 51
3-1-2-3-2 蝕刻前後AFM表面形貌比較 53
3-1-2-3-3 結論 59
3-1-2-4 初鍍態相變化薄膜加入銀膜之實驗結果 (CCD影像圖) 61
3-1-2-4-1 記錄點分類 61
3-1-2-4-2 蝕刻前後AFM表面形貌比較 62
3-1-2-4-3 結論 69
3-1-2-5 結晶態相變化薄膜加入銀膜之實驗結果 (CCD影像圖) 71
3-1-2-5-1 記錄點分類 (CCD影像圖) 71
3-1-2-5-2 蝕刻前後AFM表面形貌比較 72
3-1-2-3-3 結論 78
第四章、結論 80
參考文獻 .................................................82
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