本研究利用磁控濺鍍系統在不同的溫度環境下成長純鍺與純矽半導體薄膜，將在不同溫度下成長的鍺、矽薄膜使用離子束對薄膜做表面轟擊試驗。發現經過離子撞擊後的薄膜樣品，在室溫與低溫的磁性量測結果中，薄膜有明顯的磁矩，其磁性大小與轟擊離子種類、偏壓、劑量有關；在轟擊前鍺矽薄膜樣品皆未量測到磁性，且經雜質檢測再確認所有薄膜中並沒有磁性雜質。
鍺、矽薄膜最大磁性皆出現在氬離子轟擊，偏壓在1kV，劑量為4.7×1014。其他氣體離子(He、Ne、N2、O2)離子轟擊效果皆較微弱，估計是動量較低的原因。在離子加速偏壓較1kV低或更高時，磁化率也較弱。當離子劑量未達1014時未量測到磁矩，而超過1×1015時，磁矩也消失，推測磁矩產生最佳範圍與這些參數有關。鍺、矽薄膜樣品經轟擊出現磁矩在經過退火後，也稍有改變，但效果較為微弱。

This thesis reports the magnetism in semiconductor (Ge and Si) nanostructures induced by ion-beam sputtering. Ge films and Si films were prepared at different temperatures by magnetron sputtering. The room-temperature ferromagnetism was observed from Ge and Si which are sputtered with different Ar+ ion energies. At room temperature and low temperature the various magnetic moment that depends on different bombardment ions, bias and bombardment quantity could be observed. Before bombarding, the magnetic properties of the Ge and Si films were observed and no magnetic impurities were found in the thin films. By Ar+ ion bombard with bias 1kV, dose 4.7×1014, the maximum magnetism of Ge and Si thin films was obtained than other gas-ions (He, Ne, N2, O2). The reason is probability that the momentum of ions is lower than Ar+. The maganetization was relatively small when the bias of acceleration was lower or higher than 1kV. When the quantity was lower than 1014 or exceed 1×1015 the magnetic moment was observed. Our conclusion is the magnetic moment that was found in the proper range. After the Ge and Si thin films magnetic moment were annealed, the magnetic moment was slightly changed.

目錄
摘要 (中文)……………………………………………………………....i
摘要 (英文)……………………………………………………………...ii
誌謝……………………………………………….…………..................iii
目錄……………………………………………………………………...iv
表目錄………………………………………………………….…….…vii
圖目錄………………………………………………..…..……...……..viii
第一章、緒論……………………………………………………………..1
第二章、文獻回顧………………………………………………………..3
2.1 離子束原理…………………………………..……..……………….3
2.2 碰撞原理……………………….……………………………..……..6
2.3 離子束撞擊表面特性……………………………...………………7
2.4 磁性物質簡介………………………………….…….………….....10
2.5 非磁性材料磁特性….………………………………….……….....13
2.5.1 奈米顆粒之磁特性……………………………..………......13
2.5.2 離子撞擊誘發磁特性………………………..…………..…16
第三章、實驗流程與儀器原理…………………………………………20
3.1 實驗流程……………..……..………………......……………….…20
3.2 儀器原理…………………………………………...…………........22
3.2.1 原子力顯微鏡(Atomic Force Microscope, AFM)….....…...22
3.2.2 X光繞射(X-ray diffraction)………………………..……....23
3.2.3 超導量子干涉磁量儀………...….........................................24
3.2.4 震動樣品磁力計(Vibrating Sample Magnetometer,VSM)
……………………………………………………………………..25
3.2.6場發射穿透式電子顯微鏡.....................................................26
第四章、結果與討論……………………………………………………27
4.1不同成長溫度下的薄膜表面及結構分析………………..…...........27
4.1.1 鍺薄膜表面及結構分析….……………………..……..…...27
4.1.2 矽薄膜表面及結構分析……………………………..……..32
4.2 不同氣體轟擊比較……………………………………….……......36
4.3 不同能量轟擊對薄膜的影響……………….……………..............39
4.3.1 室溫成長Ge薄膜經不同能量轟擊….……….…….……...39
4.3.2 150℃成長Ge薄膜經不同能量離子轟擊…………………45
4.3.3 300℃成長Ge薄膜經不同能量離子轟擊…………………49
4.3.4 400℃成長Ge薄膜經不同能量離子轟擊…………..……..56
4.3.5 室溫成長Si薄膜經不同能量離子轟擊………….....……..61
4.3.6 150℃成長Si薄膜經不同能量離子轟擊……………..……67
4.3.7 300℃成長Si薄膜經不同能量離子轟擊…………..………72
4.3.8 400℃成長Si薄膜經不同能量離子轟擊…………..………79
4.4 轟擊時間對薄膜磁性的影響..…………….……………...……….83
4.5 退火對薄膜的影響……………….………….………………….....89
第五章、結論…………………………………………………….……..91
第六章、參考文獻……………………………………………….……..93

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