臺灣博碩士論文加值系統

本論文中，吾人首先成功的模擬SiO2/Si異質結構中的負微分電阻(NDR)現象，並應用負微分電阻現象研製雙井矽基RTD元件(DWRTD)。初步先提出模擬單峰值負微分結構之I-V特性，並利用並聯電路型式，來獲得雙峰值的共振開關元件。
本文研製出各種負微分電阻結構元件，包括SiO2/n-Si/SiO2/n-Si (SW n-Si), SiO2/p-Si/SiO2/n-Si (SW p-Si)， SiO2/n-Si/SiO2/n-Si/SiO2/ n-Si (DW n-Si) 異質結構，這三種NDR元件在順偏之峰谷電流比值(peak-to-valley current ratio, PVCR)分別為1.03 ( )，1.67 ( )和1.26 ( )。
　　PN接面結構應用於研製溫度感測效應，經室溫至100℃環境下所量測的特性變化。因此，本研究研製SiO2/n-Si/SiO2/p-Si (SW n-Si) 之異質結構NDR元件，可當作溫度感測元件。在溫度分別為25℃、40℃、50℃、60℃、70℃、80℃、90℃、100℃環境變化下，所測得阻值有明顯變化且分別為2.18KΩ、2.1KΩ、2.02KΩ、1.96KΩ、1.81KΩ、1.75KΩ、1.689KΩ、1.61KΩ，即RT敏感值為0.008。
　　　吾人使用太陽能驅動兩個串聯RTD元件，其中Cp所量測結果為5.41165pF，並經計算得知時間常數約為2.405ns，而實際量測開關訊號結果之時間常數約為2.5ns與計算值符合。
　　　最後，吾人利用RTD元件中低功率、低漏電流、高峰谷值(PVCR)特性，在數位/類比轉換器、微波共振元件、光快速開關元件、分頻電路等產品發展上亦有助益

In this thesis, we successfully simulate NDR phenomenon in SiO2/Si/SiO2 hetero-structures and use NDR (negative differential resistance) phenomenon to manufacture DWRTD (double well resonant tunneling diode). We initially propose simulated I-V character of one-peak negative differential resistances and use parallel-connected NDR circuit to get multi-peak negative differential resistance.
This thesis fabricates all kinds of NDR structure devices including SiO2/n-Si/SiO2/n-Si (SW n-Si), SiO2/p-Si/SiO2/n-Si (SW p-Si), and SiO2/n-Si/SiO2/n-Si/SiO2/n-Si (DW n-Si) hetero-structures, The typical peak-to-valley current ratios (PVCRs) at forward and reverse biases for these NDR diodes are 1.03, 1.67, and 1.26 respectively.
This thesis shows the variation of P/N structure characteristic when P/N structure is applied to studying temperature sensing effect under room temperature to 100℃. Therefore, this research manufactures SiO2/n-Si/SiO2/p -Si (SW n-Si) that can be used as temperature sensing device. Under 25℃, 40℃, 50℃, 60℃, 70℃, 80℃, 90℃, and 100℃, the resistance is 2.18KΩ, 2.1 KΩ, 2.02 KΩ, 1.96 KΩ, 1.81 KΩ, 1.75KΩ, 1.68KΩ, and 1.61KΩ, respectively. And resistance Sensitivity of RT is 0.008. The resistance shows the obvious variation.
The oscillator device of the circuit employs two RTD connected serially. Cp is 5.41165 pF, time constant is about 2.405 ns after calculated, and time constant of signal is about 2.5 ns. The time constant of signal corresponds to calculation value.
Finally, we apply the characteristics of RTD devices that are low power, low leakage current, and large Peak-to-Valley-Current-Ratio (PVCR) to digital/ analog converter, microwave resonant component, light speed switch component, separated frequency circuit, etc. On the development of these products, the characteristics of RTD devices are quite helpful.

Abstract .................................................I
Contents .................................................V
Chapter 1 Introduction............................................. 1
Chapter 2 Fundamental Theory............................. 9
2.1 Theoretical analyses of NDRD......................... 9
2.2 Tunneling Through a Single Barrier................... 9
2.3 Silica Oxidation of Calculating QMWTE................12
2.4 Double-Barrier Tunneling of Transmission Function....16
2.5 Double-Barrier Current Density Formula...............27
Chapter 3 Simulations and Analysis...................... 32
3.1 Introduction........................................ 32
3.2 Simulation Steps.................................... 33
3.3 Simulation Results and Analysis......................35
Chapter 4 Experiment and Measurement Apparatus.......... 70
4.1 Introduction........................................ 70
4.1.1 Resonant Tunneling in silicon based materials of Si/SiO2................................................. 70
4.1.2 Resonant Tunneling devices process equipment...... 70
4.2 Experiment Flow..................................... 71
4.2.1 Resonant Tunneling Diode of based Experiment Flow.................................................... 71
4.2.2 Various Types of Experiments Flow Explained... 73
4.3 Experiment Apparatus................................ 78
4.3.1 DC/RF magnetron sputtering........................ 78
4.3.2 Vacuum Coater System.......................... 80
4.3.3 Exposure and Photolithography Equipment........... 82
4.4 Measurement Apparatus............................... 83
4.4.1 Current-Voltage Measurement Apparatus............. 83
4.4.2 Hall Effect Measurement System and Four Point Probe Meter................................................... 84
4.4.3 Optical Thin-Film Measurement Instrument and System Microscope...............................................85
4.4.4 Scanning Electron Microscope (SEM) and Energy Dispersive Spectrometer (EDS)............................86
Chapter 5 Results and Discussions........................90
5.1 Results and Analysis of Silicon and SiO2 Thin Films................................................... 90
5.1.1 Deposition rate comparison between Silicon and SiO2.................................................... 90
5.1.2 X-ray Diffraction (XRD) Analysis.................. 93
5.1.3 Raman Spectrum System for SiO2 layer Analysis..... 95
5.1.4 Energy Dispersive X-ray Spectrometer (EDS) Analysis................................................ 96
5.2 Results and Analysis of Resonance Tunneling Devices.100
5.2.1 Analysis of the SiO2/p-Si/SiO2/n-Si Device Characteristic..........................................100
5.2.2 Analysis of the n-Si/SiO2/n-Si/SiO2/n-Si/SiO2 Device Characteristic..........................................107
5.2.3 Analysis of the p-Si/SiO2/n-Si/SiO2 Device Characteristic..........................................114
5.2.4 Analysis of the n-Si/SiO2/n-Si/SiO2 Device Characteristic..........................................127
5.2.5 Temperature-Dependent I–V Characteristics of the p-Si/SiO2/n-Si Diodes ....................................136
5.2.6 Application of the NDR Oscillator Devices is run by Solar- driven...........................................142
Chapter 6 Conclusion....................................148
6.1 Conclusion..........................................148
Reference...............................................152

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