本研究利用側向極化光激螢光光譜和時間解析光激螢光光譜，探
討表面電漿對於InGaN/GaN 多重量子井結構之光學特性的影響。我
們發現鍍銀後的樣品其側向光激螢光的發光強度會增強，並且光激螢
光的增強主要為橫向磁波分量。另一方面，我們分析時間解析光激螢
光光譜的結果，發現樣品鍍銀前之光激螢光上升率其最大值發生在光
激螢光的峰值2.73 eV 處。而樣品鍍銀後之光激螢光上升率其最大值
並非在光激螢光的峰值，而是發生於光激螢光能量2.80eV 處。此一
現象與由理論計算銀-氮化鎵表面電漿的色散關係圖中所得之共振能
量2.80 eV 吻合。?合本研究所有實驗的結果，我們發現樣品經鍍銀
後其側向光激螢光增強、螢光增強主要為橫向磁波及光激螢光上升率
最大值發生在光激螢光能量為2.80 eV 處，這些現象都與表面電漿共
振有關。我們成功的利用表面電漿改變樣品發光的極化特性，我們實
驗的結果將有助於製造不同極化程度的發光元件。

This thesis studies the effects of surface Plasmon ( SPs ) on theluminescence properties of InGaN/GaN multiple quantum well（MQWs）structures using the edge-emitting polarized photoluminescence（PL）and polarized time-resolved photoluminescence（TRPL）. We find that the intensity of edge-emitting PL of Ag-coated MQWs was enhanced and TM
polarized emission became the dominant component of emission for the Ag-coated MQWs. On the other hand, we analyze the result of TRPL spectrum and find that the maximum value of PL rise rate of as-grown MQWs was located at the peak energy (2.73 eV) of PL spectrum. The maximum value of PL rise rate of Ag-coated MQWs was not located at
the peak energy (2.73 eV) of PL spectrum ,rather, it was located at the energy with a value of 2.80 eV of the PL spectrum. This phenomenon coincides with the caculated dispersion relation of the SPs at Ag/GaN interface. Our experimental results, including the enhancement in PL
intensity. the dominance of TM polarized emission in PL spectrum, and the coincidence of the maximum energy value of the energy dependence of PL rise rate with the resonance energy of the SPs dispersion at Ag-GaN interface, can be understood consistently by the effect of coupling between SPs and QWs. Thus, we have used the effect of SPs to
control the degree of polarization of luminescence of MQWs. Our experimental results will help to develope the light emitters with different degree of polarization of luminescence.

摘要............................................................................................................i
英文摘要....................................................................................................ii
致謝...........................................................................................................iii
目錄...........................................................................................................iv
圖目錄.......................................................................................................vi
表目錄…………………………………………………………………..Ⅶ
第一章 序論..............................................................................................1
1-1 前言.....................................................................................................1
1-2 研究動機.............................................................................................3
參考文獻………………………………………………………………....4
第二章 理論背景與文獻..........................................................................7
2-1 氮化鎵藍色發光二極體之發展歷史與文獻回顧.............................7
2-2 氮化銦鎵能帶結構與能隙...............................................................12
2-3 能隙與極化光之關係.......................................................................15
參考文獻………………………………………………...……...………19
第三章 實驗架構與樣品製程................................................................25
3-1 元件製備...........................................................................................25
3-2 側向光激螢光...................................................................................26
3-2-1側向光激螢光實驗架構.................................................................27
3-3 時間解析光激螢光譜......................................................................28
3-3-1 時間解析光激螢光實驗架構………………………...…………28
參考文獻……………………………………………………..…………31
第四章 結果與論....................................................................................32
4-1 側向光激螢光發光譜分析...............................................................32
4-2 時間解析螢光光譜分析...................................................................46
參考文獻………………………………………………………………..59
第五章 結論............................................................................................61

[1] J. Piprek, Nitride Semiconductor Devices：Principle and Simulation, (2007)
[2] D. A. Schultz, Current Opinion in Biotechnology 14,13 (2003).
[3] M. Moskovits, Rev. Mod. Phys. 57, 783 (1985).
[4] M. Westphalen, U. Kreibig, J. Rostalski, H. Luth, D. Meissner,sol. Energy Mater. Sol. Cells 61, 97,（2000）.
[5] S. Pillai, K. R. Catchpole, T. Trupke, and M. A. Green ,J. Appl. Phys 101, 093105,（2007）.
[6] A.Kock, E. Gornik, M. Hauser, and W. Beinstingl, Appl. Phys. Lett. 57, 2327,（1990）.
[7] N. E. Hecker, R. A. Hopfel, N. Sawaki, T. Maier, and G. Strasser, Appl. Phys. Lett. 75, 1577,（1999）.
[8] S. Gianordoli, R. Hainberger, A. Kock, N. Finger, E. Gornik, C.Hank, and L. Korte, Appl. Phys. Lett. 77, 2295,（2000）.
[9] J. Vuckovic, M. Loncar, and A. Scherer, IEEE J. Quantum Electron. 36,1131,（2000）.
[10] I.Gontijo, M. Borodisky, E. Yablonvitch, S. Keller, U. K. Mishra, and S. P. DenBaars, Phys. Rev. B, 60, 11564 ,（1999）.
[11] A. Neogi, C.-W. Lee, H. O. Everitt, T. Kuroda, A. Tackeuchi, and E. Yablonvitch, Phys. Rev. B, 66, 153305, 2002
[12] K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, A.Scherer, Nature Mater. 3, 601, 2004.
[13] M. N. Weiss, R. Srivastava, and H. Groger,“ Experimental investigation of asurfaceplasmon-based integrated-optic humidity sensor,” Electron. Lett., vol. 32,no. 9, pp. 842-843, Apr. 1996.
[14] C. Mouvet, R. D. Harris, C. Maciag, B. J.Luff, J. S.Wilkinson, J. Piehler, A. Brecht,G. Gauglitz, R. Abuknesha, and G. Ismail,“Determination of simazine in watersamples by waveguide surface Plasmon resonance,Analytica Chimica Acta, vol.338, pp. 109-117, 1997.
[15] J. Dostalek, J. ?tyroky, J. Homola, E. Brynda, M. Skalsky, P. Nekvindova, J. ?pirkova, J. ?kvor, and J. Schrofel, “Surface plasmon resonance biosensor based on integrated optical waveguide,” Sens. Actuators B, Chem., vol. 76, pp. 8-12, 2001.
[1] C. Y. Hwang, “Growth and Characterization of Gallium Nitride on (0001) sapphire by Plasma Enhanced Atomic Layer Epitaxy and by Low Pressure Metaloganic Chemical Vapor Deposition”,Ph.D. dissertation, Rutgers University, Piscataway, NJ (1995).
[2] C. Wetzel, S. Nitta, T. Takeuchi , S. Yamaguchi , H. Amano and I.Akasaki, “On the band structure in GaInN/GaN Heterostructures -Strain, Band Gap and Piezoelectric Effect,” MRS Internet Journal Nitride Semiconductor Research, Vol. 3, Article 31, 1998.
[3] T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano and I. Akasaki, “Optical properties of strained AlGaN and GaInN on GaN,” Japanese Journal of Applied Physics, Part 2, Vol. 36 ,pp. L177-179,1997.
[4] C. C. Chen, K. L. Hsieh, G. C. Chi, C. C. Chuo, J. I. Chyi and C. A. Chang, Solid-State Electronics 46, 1123（2002）
[5] R. Zheng and T. Taguchi, “Stokes shift in InGaN epitaxial layers”, Appl. Phy. Lett. Vol.77,19, pp.3024 (2000).
[6] H. Morkoc, Nitride Semiconductors and Devices, (1999).
[7] P. Perlin, C. Kisielowski, V. Iota, B. A. Weinstein, L. Mattos, N. A. Shapiro, J. Kruger, E. R. Weber, and J. Yang, “InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy,” Applied Physics Letters, Vol. 73, pp. 2778-2780, 1998.
[8] T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano and I. Akasaki, “Quantum- Confined Stark Effect due to Piezoelectric Fields in the GaInN Strained Quantum Wells,” Japanese Journal of Applied Physics, Part 2, Vol. 36 ,pp. 382-385,1997.
[9] T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano and I. Akasaki, “Optical properties of strained AlGaN and GaInN on GaN,” Japanese Journal of Applied Physics, Part 2, Vol. 36 ,pp. L177-179,1997.
[10] T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H.Amano, and I. Akasaki, “Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells”,Jpn. J. Appl.Phys. Vol. 36, L382, (1997).
[11] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn,* and K. H. Ploog“Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy” PHYSICAL REVIEW B, VOLUME 65, 075202 ,2002 The American Physical Society
[12] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog “Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy” PHYSICAL REVIEW B, VOLUME 65, 075202 2002 The American Physical Society
[13] P. Misra, U. Behn, O. Brandt, and H. T. Grahn” Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy” Appl. Phys. Lett. 88, 161920 (2006)
[14] H. Masui, N. N Fellows, S. Nakamura and S. P. DenBaars “Optical polarization characteristics of light emission from sidewalls of primary-color light-emitting diodes” Semicond. Sci. Technol. 23 (2008) 072001 Rapid Communication
[15] S. Ghosh, P. Misra, and H. T. Grahn, B. lmer, S. Nakamura, S. P. DenBaars, and J. S. Speck “Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire ” J.Appl. Phys. 98, 026105 (2005)
[16] N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M.R.Krames ”Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes” Appl. Phys. Lett. 86, 111101 (2005)
[17] C. Jia, T. Yu, S. Mu, Y. Pan, Z. Yang, Z. Chen,Z. Qin, and G. Zhang” Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm” Appl. Phys. Lett. 90, 211112 (2007)
[18] H. MASUI, A. CHAKRABORTY, B. A. HASKELL, U. K. MISHRA, J. S. SPECK, S. NAKAMURA and S. P. DENBAARS” Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate” Jpn. J. Appl. Phys., Vol. 44, No. 43 (2005)
[19] C. Jia, T. Yu, S. Mu, Y. Pan, Z. Yang, Z. Chen,Z. Qin, and G. Zhang” Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm” Appl. Phys. Lett. 90, 211112 (2007)
[20] J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang” Polarization of III-nitride blue and ultraviolet light-emitting diodes” Appl. Phys. Lett. 86, 091107 (2005)
[21] J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang” Band structure and fundamental optical transitions in wurtzite AlN” Appl. Phys. Lett., Vol. 83, No. 25, 22 December 2003
[22] J. Piprek, Nitride Semiconductor Devices：Principle and Simulation, (2007)
[1] 彭兆祥.”鑽石薄膜、氮化鈦與圖紋氮化鎵中間層對Ⅲ-氮化物半導體光學性質影響之研究” 國立台灣海洋大學光電科學研究所，碩士論文，民國96年
K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, A. Scherer, Nature Mater. 3, 601,（2004）.
[2] K. Okamoto, I. Niki, A. Shvartser, G. Maltezos and A. Scherer, Phys. Stat. Sol. (a) 204, 2103–2107 (2007)
[3] D. M. Yeh, C. F. Huang, Y. C. Lu, C.Y. Chen,T. Y. Tang, and J. J. Huang, K. C. Shen, Y. J. Yang ,C. C. Yang, Appl. Phys.Lett 91, 063121 （2007）
[4] Z. Wang, Z. Chen, Z. Lan, X. Zhai,W. Du, and Q. Gong, Appl. Phys.Lett 90, 151119（2007）
[5] D. K. Gifford, D. G. Hall, Appl. Phys.Lett 80, 3679（2002）
[6] C. W. Lai, J. An, and H. C. Ong, Appl. Phys.Lett 86, 251105 （2005）
[7] K. Okamoto, I. Niki, and A. Scherer , Appl. Phys. Lett. 87, 071102 ,（2005）.
[8] 邱國斌,蔡定平.”金屬表面電漿簡介”物理雙月刊（廿八卷二期）(2006)
[9] T. Bartel, M. Dworzak, M. Strassburg, A. Hoffmann, A. Strittmatter, and D. Bimberg, Appl. Phys. Lett. 85, 1946 (2004)
[10] T. Akasaka, H. Gotoh, H. Nakano, and T. Makimoto,Appl. Phys. Lett. 86, 191902 (2005)
[11] M. Y. Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, G. Simin, and M. Asif Khan, Appl. Phys. Lett. 80, 3943 (2002)
[12] Z. Xu and Y. Zhang, Appl. Phys. Lett. 89, 013113 (2006)
[13] R. A. Rerrell, Phys. Rev. 111, 1214, 1958
[14] 張庭維.” 電漿/半導體界面光電特性之研究” 國立台灣海洋大學光電科學研究所，碩士論文，民國97年
[15] K. Okamoto, I. Niki, A. Shvartser, G. Maltezos, Y. Narukawa, T. Mukai , Y. Kawakami, A. Scherer , P. S. S. (a) 204, No. 6, 2103–2107 (2007)
[16] C. Kothandaraman,a) I. Kuskovsky, and G. F. Neumark, R. M. Park, Appl. Phys. Lett.69,1523 (1996)
[17] G. Aichmayr, M. D. Mart?’n, H. van der Meulen, C. Pascual, L. Vin? a,a) and J. M. Calleja, F. Schafer, J. P. Reithmaier, and A. Forchel, Appl. Phys. Lett., 76, 3540 (2000)
[18] L. Zhang, Thomas F. Boggess,a) K. Gundogdu, and Michael E. Flatte’, D. G. Deppe,b) C. Cao, and O. B. Shchekin, Appl. Phys. Lett,79,3320 (2001)
[19] P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin,A. Dussaigne,J. D. Ganiere,N. Grandjean, and B. Deveaud-Pledran, Appl. Phys. Lett. 94, 201115 (2009)
[20] H.C. Wang, Y.C. Lu, C.Y. Chen, and C. C. Yang, Appl. Phys. Lett. 89, 011906 (2006)