臺灣博碩士論文加值系統

本研究利用側向極化光激螢光光譜和時間解析光激螢光光譜，探
討表面電漿對於InGaN/GaN 多重量子井結構之光學特性的影響。我
們發現鍍銀後的樣品其側向光激螢光的發光強度會增強，並且光激螢
光的增強主要為橫向磁波分量。另一方面，我們分析時間解析光激螢
光光譜的結果，發現樣品鍍銀前之光激螢光上升率其最大值發生在光
激螢光的峰值2.73 eV 處。而樣品鍍銀後之光激螢光上升率其最大值
並非在光激螢光的峰值，而是發生於光激螢光能量2.80eV 處。此一
現象與由理論計算銀-氮化鎵表面電漿的色散關係圖中所得之共振能
量2.80 eV 吻合。?合本研究所有實驗的結果，我們發現樣品經鍍銀
後其側向光激螢光增強、螢光增強主要為橫向磁波及光激螢光上升率
最大值發生在光激螢光能量為2.80 eV 處，這些現象都與表面電漿共
振有關。我們成功的利用表面電漿改變樣品發光的極化特性，我們實
驗的結果將有助於製造不同極化程度的發光元件。

This thesis studies the effects of surface Plasmon ( SPs ) on theluminescence properties of InGaN/GaN multiple quantum well（MQWs）structures using the edge-emitting polarized photoluminescence（PL）and polarized time-resolved photoluminescence（TRPL）. We find that the intensity of edge-emitting PL of Ag-coated MQWs was enhanced and TM
polarized emission became the dominant component of emission for the Ag-coated MQWs. On the other hand, we analyze the result of TRPL spectrum and find that the maximum value of PL rise rate of as-grown MQWs was located at the peak energy (2.73 eV) of PL spectrum. The maximum value of PL rise rate of Ag-coated MQWs was not located at
the peak energy (2.73 eV) of PL spectrum ,rather, it was located at the energy with a value of 2.80 eV of the PL spectrum. This phenomenon coincides with the caculated dispersion relation of the SPs at Ag/GaN interface. Our experimental results, including the enhancement in PL
intensity. the dominance of TM polarized emission in PL spectrum, and the coincidence of the maximum energy value of the energy dependence of PL rise rate with the resonance energy of the SPs dispersion at Ag-GaN interface, can be understood consistently by the effect of coupling between SPs and QWs. Thus, we have used the effect of SPs to
control the degree of polarization of luminescence of MQWs. Our experimental results will help to develope the light emitters with different degree of polarization of luminescence.

摘要............................................................................................................i
英文摘要....................................................................................................ii
致謝...........................................................................................................iii
目錄...........................................................................................................iv
圖目錄.......................................................................................................vi
表目錄…………………………………………………………………..Ⅶ
第一章 序論..............................................................................................1
1-1 前言.....................................................................................................1
1-2 研究動機.............................................................................................3
參考文獻………………………………………………………………....4
第二章 理論背景與文獻..........................................................................7
2-1 氮化鎵藍色發光二極體之發展歷史與文獻回顧.............................7
2-2 氮化銦鎵能帶結構與能隙...............................................................12
2-3 能隙與極化光之關係.......................................................................15
參考文獻………………………………………………...……...………19
第三章 實驗架構與樣品製程................................................................25
3-1 元件製備...........................................................................................25
3-2 側向光激螢光...................................................................................26
3-2-1側向光激螢光實驗架構.................................................................27
3-3 時間解析光激螢光譜......................................................................28
3-3-1 時間解析光激螢光實驗架構………………………...…………28
參考文獻……………………………………………………..…………31
第四章 結果與論....................................................................................32
4-1 側向光激螢光發光譜分析...............................................................32
4-2 時間解析螢光光譜分析...................................................................46
參考文獻………………………………………………………………..59
第五章 結論............................................................................................61

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