臺灣博碩士論文加值系統

在這篇論文中我們將先簡介半導體產業的發展現況，及稀磁性半導體的崛起以及已知的應用。
在第二章中將探討使用分子束磊晶系統（molecular beam epitaxy, MBE）所成長之IV族稀磁性半導體—鍺錳合金（GeMn），從物理背景到近年來自各界的研究成果。接著介紹稀磁性半導體在光激發螢光頻譜（photoluminescence, PL）在中低量磁場中的變化，分別討論下列各個效應的物理背景：塞曼效應（Zeeman effect, 原子因處在磁場裡, 而其譜線發生分裂的現象）、反磁性位移（diamagnetic shift）、以及電子自旋之sp-d軌域交換交換效應（sp-d exchange interaction）造成的光譜偏移現象。
第三章我們簡介實驗樣品之材料，回顧一些同樣成長條件的特性量測結果，以及光激發螢光光譜實驗的方法架構。
最後在第四章將討論光激發螢光光譜的結果並且使用Matlab來進行光譜峰值能量偏移的模擬。

In this paper we will first deal with the development of the semiconductor industry, the current situation and the rise of diluted magnetic semiconductor applications, as well as known.
In the second chapter we will explore the possibility of using molecular beam epitaxy system (molecular beam epitaxy, MBE) to grow Ge-Mn alloy (GeMn) group IV diluted magnetic semiconductor. Physical background and the recent research results from all scientists around the world will also be presented. The photoluminescence spectrums for diluted magnetic semiconductors vary with low-volume changes in magnetic field. We’ll discuss some effects that result in spectral shift and their physical background: Zeeman effect (the splitting of a spectral line into several components in the presence of a static magnetic field), diamagnetic shift, as well as the electron spin-orbit sp-d exchange interaction.
In chapter 3 we illustrate the experimental samples of our material, recalling some characteristics of the same growth conditions. Then we’ll introduce the structure of our photoluminescence spectrum experiment.
Finally, in chapter 4 we will discuss the results of our photoluminescence spectrum experiment and then use Matlab to simulate the energy shift.

口試委員審定書 i
中文摘要 ii
Abstract iii
誌謝 iv
目錄 v
圖目錄 vii
第一章 序言 1
1.1半導體產業 1
1.2稀磁性材料之發展 5
1.3參考文獻 8
第二章 理論及材料背景 9
2.1磁性半導體 9
2.1.1 稀磁性半導體 9
2.1.2稀磁性半導體之製作技術 10
2.2磊晶技術 14
2.2.1分子束磊晶系統 14
2.2.2 反射式高能量電子繞射 15
2.3磁場中光譜之遷移 19
2.3.1塞曼效應 19
2.3.2反磁性位移 20
2.3.3自旋交換效應 21
2.4參考文獻 26
第三章 材料製備及實驗設置 28
3.1鍺錳材料樣品 28
3.2光激發螢光光譜實驗 34
3.2.1實驗架設 34
3.3參考文獻 36
第四章 實驗結果分析及討論 37
4.1光激發螢光光譜 37
4.2光譜偏移之模擬 43
4.3參考文獻 47
第五章 結論及展望 48
5.1結論 48
5.2未來工作 48

Chapter 1

1.Jacek K. Furdyna and Jacek Kossut, Diluted Magnetic Semiconductors, National Academy Press (1991).
2.L. Bergqvist and P. H. Dederichs, Dilute Magnetic Semiconductors, NIC Symposium 2008.
3.Schaller, R.R. Moore''s law: past, present and future, IEEE Spectrum, Volume 34 Issue 6 Jun 1997.
4.Moore''s law, From Wikipedia, the free encyclopedia http://en.wikipedia.org/wiki/Moore%27s_law
5.張慶瑞，自旋電子元件(Spin-FET)之基礎與應用研究，台灣大物理學系。
6.張慶瑞，新世紀的電子傳輸方式－自旋相關傳輸，自然科學簡訊第十二卷第四期。
7.胡裕民，III-V 稀磁性半導體薄膜之研究與發展，物理雙月刊（廿六卷四期）2004年8月。

Chapter 2

1.Furdyna, J. K. Diluted magnetic semiconductors: An interface of semiconductor physics and magnetism, J. Appl. Phys. 53, 7637 (1982)
2.Jamet, M. et al. High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns, Nature Materials 5 2006 p653-659, nmat1686.
3.Park, Y. D. et al. Magnetoresistance of Mn:Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix. Appl. Phys. Lett. 78, 2739–2741 (2001).
4.Park, Y. D. et al. A Group-IV ferromagnetic semiconductor MnxGe1−x. Science 295, 651–654 (2002).
5.Kang, J.-S. et al. Spatial chemical inhomogeneity and local electronic structure of Mn-doped Ge ferromagnetic semiconductors. Phys. Rev. Lett. 94, 147202 (2005).
6.Sugahara, S., Lee, K. L., Yada, S. & Tanaka, M. Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films. Jpn J. Appl. Phys. 44, L1426–L1429 (2005).
7.Wachtel, E. & Henig, E.-T. Aufbau des systems mangan-germanium. Z. Metallkd. 60, 243–248 (1969).
8.P. Fisher et al. High-field Zeeman effect of shallow acceptors in germanium, Physical Review B, 47-19 (1993).
9.H. H. Cheng, Magneto-optical studies of II-VI and III-V heterostructure, thesis for PhD, Oxford (1996).
10.H. H. Cheng, S. T. Yen, and R. J. Nicholas, Band-offset determination and excitons in SiGe/Si 001 quantum wells, Physical Review B, 62-7 4638-4641 (2000).
11.Hongliang Li and Yihong Wu, Magnetic and electrical transport properties of Ge1−xMnx thin films, Journal of Appl. Phy. 100, 103908 (2006).
12.Kudrnovsky, J. et al. Exchange interactions in III-V and group-IV diluted magnetic semiconductors, Physical Review B, 69, 115208 (2004).
13.Thibaut Devillers, Etude des propriétés physiques des phases de Ge1−xMnx ferromagnétiques pour l''électronique de spin, thesis for PhD, INAC, CEA Grenoble (2008).
14.Stormer, H. L. et al. Magnetoluminescence of the electron-hole liquid in germanium, Physical Review B 20-10, 4213-4236 (1979).
15.V. N. Men’shov and V. V. Tugushev, Exchange Coupling in Magnetic Phase-Separated GeMn Alloys, JETP Letters, Vol. 87, No. 8, pp. 428–432 (2008).
16.Dott. Lorenzo Morresi, Growth and characterization of magnetic semiconductors GeMn, thesis for PhD, University Of Camerino (2006).
17.Huang, Wu-Ping, Strain on SiGe/Si Heterostructure and Patterned Nanostructures, thesis for PhD, National Taiwan University (2008).

Chapter 3

1.Jamet, M. et al. High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns, Nature Materials 5 2006 p653-659, nmat1686.
2.Park, Y. D. et al. A Group-IV ferromagnetic semiconductor MnxGe1−x. Science 295, 651–654 (2002).
3.Jai-Guei Xu, Optical characteristic of Si/SiGe heterostructure with strain in Si, thesis for master degree.
4.Ke-Yao Wang, Magneto-Photoluminescence study of strained Si/SiGe multi-quantum wells, thesis for master degree.

Chapter 4.

1.H. H. Cheng, Magneto-optical studies of II-VI and III-V heterostructure, thesis for PhD, Oxford (1996).
2.Jamet, M. et al. High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns, Nature Materials 5 2006 p653-659, nmat1686.
3.Park, Y. D. et al. A Group-IV ferromagnetic semiconductor MnxGe1−x. Science 295, 651–654 (2002).
4.H. H. Cheng, S. T. Yen, and R. J. Nicholas, Band-offset determination and excitons in SiGe/Si 001 quantum wells, Physical Review B, 62-7 4638-4641 (2000).
5.Jia-Min Shieh, Yi-Fan Lai, Yong-Chang Lin, and Jr-Yau Fang, Photoluminescence: Principles, Structure, and Applications, 奈米通訊第十二卷第二期。