|
1.黃德歡, 【改變世界的奈米技術】, 工研院圖書H032413. 2.T. W. Ebbesen, J. Phys. Chem. Solid 57, 951 (1996). 3.J. Sloan, J. Cook, J. R. Heesom, M. L. H. Green, and J. L. Hutchison, J. Cryst. Growth 173, 81 (1997). 4.J. J. Wu, and S. C. Liu, J. Phys. Chem. 106, 9546 (2002). 5.J. J. Wu, and S. C. Liu, Adv. Master. 14, 215 (2002). 6.P. Yang, and C. M. Lieber, Science 273, 1836 (1996). 7.Y. Q. Zhu, W. B. Hu, W. K. Hsu, M. Terrones, N. Grobert, J. P. Hare, H. W. Kroto, D. R. M. Walton, and H. Terrones, J. Mater. Chem. 9, 3173 (1999). 8.Z. G. Bai, D. P. Yu, H. Z. Zhang, Y. Ding, Y. P. Wang, X. Z. Gai, Q. L. Hang, G. C. Xiong, and S. Q. Feng, Chem. Phys. Lett. 303, 311 (1999). 9.Y. C. Choi, W. S. Kim, Y. S. Park, S. M. Lee, D. J. Bae, Y. H. Lee, G. S. Park, W. B. Choi, N. S. Lee, and J. M. Kim, Adv. Mater. 12, 746 (2000). 10.E. Hosono, S. Fujihara, K. Kakiuchi, and H. Imai, J. Am. Chem. Soc. 126, 7790-7791 (2004). 11.M. A. Greenl, and K. Emery, Prog. Photovolt: Res. Appl. 14, 45 (2006). 12.H. Cheng, J. Ma, Z. Zhao, and L. Qi, Chem. Mater. 7, 663-671 (1995). 13.Z. Berkovitch-Yellin, J. V. Mil, L. Addadi, M. Idelson, M. Lahav, and L. Leiserowitz, J. Am. Chem. Soc. 107, 3111-3122 (1985). 14.A. Wander, and N. M. Harrison, J. Chem.Phys. 115, 5 (2001). 15.Y. Sun, D. J. Riley, and M. N. R. Ashfold, J. Phys. Chem. B 110, 15186-15192 (2006). 16.L. Xu, Y. Guo, Q. Liao, J. Zhang, and D. Xu, J. Phys. Chem. B 109, 13519-13522 (2005). 17.C. Jagadish, and S. Pearton, Thin Films and Nanostructure, Elsevier (2006). 18.L. Schmidt-Mende, and J. L. MacManus-Driscoll, Materialstoday 10, 40 (2007). 19.Y. Sun, N.G. Ndifor-Angwafor, D.J. Riley, M.N.R. Ashfold, Chem. Phys. Lett. 431, 352 (2006). 20.Z.W. Pan, Z.R. Dai, Z.L. Wang, Science 291, 1947 (2001). 21.J.Y. Lao, J.Y. Huang, D.Z. Wang, Z.F. Ren, Nano Lett. 3, 235 (2003). 22.G.W. She , X.H. Zhang, W.S. Shi, X. Fan, J. C.Chang, C.S. Lee, S.T. Lee, and C.H. Liu, Appl. Phys. Lett. 92, 053111 (2008). 23.許樹恩, 吳泰伯, X光繞射原理與材料結構分析, 中國材料科學學會 修訂版(1994). 24.L. Zhang, and H. Huang, Appl. Phys. Lett. 90, 023115 (2007). 25.O. Dulub, U. Diebold, and G. Kresse, Phys. Rev. Lett. 90, 016102 (2003). 26.A. Wander, F. Schedin, P. Steadman, A. Norris, R. McGrath, T. S. Turner, G. Thornton, and N. M. Harrison, Phys. Rev. Lett. 86, 3811 (2001). 27.N. W. Emanetoglu, C. Gorla, Y. Liu, S. Liang, and Y. Lu, Mater. Sci. Semiconductor Process. 2, 247 (1999). 28.Y. M. Chiang, D. BirnieⅢ, and W. D. Kingery, Physical Ceramics, John Wiley & Sons, Inc. (1997). 29.S. J. Chang, Y. K. Su, and Y. P. Shei, J. Vac. Sci.Technol. A 13, 381 (1995). 30.Y. Kashiwaba, K. Haga, H. Watanabe, B. P. Zhang, Y. Segawa, and K. Wakatsuki, Phys. Status Solid B 229, 921 (2002). 31.Roy. G. Gordon, MRS Bulletin 25, 52 (2000). 32.S. M. Rozati, and Sh. Akesteh, Materials Characterization 58, 319-322 (2007). 33.J. K. Sheu, K. W. Shu, M. L. Lee, C. J. Tun, and G. C. Chi, Journal of The Electrochemical Society 154, H521-H524 (2007). 34.J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, and B. H. Zhao, J. Appl. Phys. 101, 083705 (2007). 35.L. Liao, H. B. Lu, J. C. Li, H. He, D. F. Wang, D. J. Fu, and C. Liu, J. Phys. Chem. C 111, 1900 (2007). 36.J. Han, P. Q. Mantas, and A. M. R. Senos, Journal of European Ceramic Society 22, 49-59 (2002). 37.A. Umar, B. Karunagaran, E-K. Suh, and Y. B. Hahn, Nanotechnology 17, 4072 (2006). 38.H. Q. Le, S. J. Chua, Y. W. Koh, K. P. Loh, Z. Chen, E. A. Fitzgerald, and C. V. Thompson, Appl. Phys. Lett. 87, 101908 (2005). 39.X. Liu, X. Hu, H. Cao, and R. P. H. Chang, J. Appl. Phys. 95, 3141 (2004). 40.K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, A. Appl. Phys. Lett. 68, 403 (1996). 41.A. Van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Phys. Chem. B 104, 1715 (2000). 42.Q. X. Zhao, P. Klason, M. Willander, H. M. Zhong, W. Lu, and J. H. Yang, Appl. Phys. Lett. 87, 211912 (2005). 43.D. Li, Y. H. Leug, A. B. Djuriši , Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, and W. K. Chan, Appl. Phys. Lett. 85, 1601 (2004). 44.M. Gomi, N. Oohira, K. Ozaki, and M. Koyano, Japan. J. Appl. Phys. 42, 481 (2003). 45.W. M. Kwok, Y. H. Leung, A. B. Djuriši , W. K. Chan, and D. L. Phillips, Appl. Phys. Lett. 87, 093108 (2005). 46.R. M. B. Cross, M. M. De Souza, and E. M. S. Narayanan, Nanotechnology 16, 2188-2192 (2005). 47.C. Chandrinou, N. Boukos, C. Stogios, and A. Travlos, Microelectronics Journal 40, 296-298 (2009). 48.C. C. Lin, H. C. Liao, and S. Y. Chen, J. Vac. Sci. Technol. B 24, 304-307 (2006). 49.X. Meng, B. Lin, B. Gu, J. Zhu, and Z. Fu, Solid State Communications 135, 411 (2005). 50.T. Okada, B. H. Agung, and Y. Nakata, Appl. Phys. A 79, 1417 (2004). 51.G. R. Li, C. R. Dawa, Q. Bu, F. L. Zhen, X. H. Lu, Z. H. Ke, H. E. Hong, C. Z. Yao, P. Liu, and Y. X. Tong, Electrochemistry Communication 9, 863-868 (2007). 52.M. Guo, P. Diao, and S. Cai, Applied Surface Science 249, 71 (2005). 53.J. Song, and S. Lim, J. Phys. Chem. C 111, 596 (2007). 54.D. Wang, C. Song, Z. Hu, W. Chen, and X. Fu, Materials Letters 61, 205 (2007). 55.X. Hou, F. Zhou, and W. Liu, Mater. Lett. 60, 3786 (2006). 56.H. Zhang, D. Yang, S. Li, X. Ma, Y. Ji, J. Xu, and D. Que, Mater.Lett. 59, 1696 (2005). 57.M. N. R. Arshfold, R. P. Doherty, N. G. Ndifor-Angwafor, D. J. Riley, and Y. Sun, Thin Solid Film 515, 8679 (2007). 58.C. X. Xu, A. Wei, X. W. Sun, and Z. L. Dong, J. Phys. D; Appl. Phys. 39, 1690 (2006). 59.Q. Li, V. Kumar, Y. Li, H. Zhang, T. J. Marks, R. P. H. Chang, Chem. Mater. 17, 1001 (2005). 60.D. Perednis, and L. J. Gauckler, Journal of Electroceramics 14, 103 (2005). 61.A. R. Balkenende, A. Bogaerts, J. J. Scholtz, R. P. M. Tijburg, and H. X. Willems, Philips Journal of Research 50, 365 (1996). 62.R. Rajan, and A. B. Pandit, Ultrasonic 39, 235 (2001). 63.A. M. Ganan-Calvo, J. Davila, and A. Barrero, J. Aerosol Sci. 28, 249 (1997). 64.C. H. Chen, E. M. Kelder, and J. Schoonman, J. Eur. Ceram. Soc. 18, 1439 (1998). 65.B. J. Lokhande, P. S. Patil, and M. D. Uplane, Matter. Lett. 57, 573 (2002). 66.H. H. Afifty, S. A. Nasser, and S. E. Demian, J. Mater. Sci: Materials in Electronics 2, 152 (1991). 67.X. Liu, Z. Jin, S. Bu, J. Zhao, and Z. Liu, J. Am. Ceram. Soc. 89, 1226-1231 (2006). 68.M. Guo, P. Diao, and S. Cai, Applied Surface Science 249, 71-75 (2005). 69.J. Qiu, X. Li, W. Yu, X. Gao, W. He, S. Park, Y. Hwang, and H. Kim, Thin Solid Films xxx, xxx (2008). 70.R. Romero, D. Leinen, E. A. Dalchiele. J. R. Ramos-Barrado, and F. Martin, Thin Solid Film 515, 1942 (2006). 71.L. Zhang, Z. Chen, Y. Tang, and Z. Jia, Thin Solid Film 492, 24-29 (2005). 72.J. Liu, S. Lee, K. Lee, Y. H. Ahn, J. Y. Park, and K. H. Koh, Nanotechnology 19, 185607 (2008). 73.X. Wang, C. J. Summers, and Z. L. Wang, Appl Phys Lett 86, 013111 (2005). 74.K. B. Oldham, and J. C. Myland, Fundamentals of electrochemical science, 128 (1994) 75.D. Wang, X. Meng, Z. Chen, and Q. Fu, Physical E 40, 852 (2008). 76.Y. Wang, X. Li, G. Lu, X. Quan, and G. Chen, J. Phys. Chem. C 112, 7332 (2008). 77.D. T. Harvey, and R. W. Linton, Colloid and Surfaces 11, 81-96 (1984). 78.G. Ballerini, K. Ogle, and M. -G. Barthes-Labrousse, Applied Surface Science 253, 6860-6867 (2007). 79.S. Lee, Y. Jeong, S. Jeong, J. Lee, M. Jeon, and J. Moon, Superlattices and Microstructure 44, 761-769 (2008). 80.X. Zhang, W. G. Sloof, A. Hovestad, E. P. M. van Westing, H. Terryn, and J. H. W. de Wit, Surface & Coating Technology 197, 168-176 (2005). 81.J. Qiu, X. Lin, W. He, S. J. Park, H. K. Kim, Y. H. Hwang, J. H. Lee, and Y. D. Kim, Nanotechnology 20, 155603 (2009). 82.A.B. Djurisic, Y. H. Leung, and K. H. Tam, Appl Phys Lett 88, 103107 (2006). 83.K. H. Tam, C. K. Cheung, Y. H. Leung, A. B. Djurisˇic´, C. C. Ling, C. D. Beling, S. Fung, W. M. Kwok, W. K. Chan, D. L. Phillips, L. Ding, and W. K. Ge, J. Phys. Chem. B 110, 20865-20871 (2006). 84.M. Guo, P. Diao, and S. Cai, Journal of Solid State Chemistry 178, 1864 (2005). 85.R. B. M. Cross, M. M. De Souza, and E. M. Sankara Narayanan, Nanotechnology 16, 2188-2192 (2005). 86.W. Shen, Y. Duan, J. Wang, Q. Wang, and Y. Zeng, Materials and Nanotechnologies 6029, 60290G-1 (2005).
|