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研究生:辜建燁
研究生(外文):Chien-Yeh Ku
論文名稱:開發以新型基板製作覆晶式AlGaInPLED之晶粒製程技術研究
論文名稱(外文):The study of flip-chip AlGaInP LED by chip on wafer process and novel substrate technology development
指導教授:黃建盛黃建盛引用關係
指導教授(外文):Chien-Sheng Huang
學位類別:碩士
校院名稱:國立雲林科技大學
系所名稱:光學電子工程研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
畢業學年度:97
語文別:中文
論文頁數:86
中文關鍵詞:低溫玻璃粉覆晶式晶圓鍵合發光二極體磷化鋁鎵銦
外文關鍵詞:AlGaInPWafer BondingGlass PowderFlip-chipLED
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本研究係開發一新型LED晶圓鍵合技術及晶粒製程,其應用在AlGaInP LED結構上,不同於原有的晶圓介質層接合技術,先以低溫玻璃粉燒結成一玻璃基板塊材,且使用具MB(metal bonding)之AlGaInP LED磊晶圓結構,經由自開發之快速熱鍵合過程,將玻璃塊材融熔接合在AlGaInP磊晶層上,再利用化學溶液蝕刻去除原有之GaAs基板,製成一具透明且絕緣性基板之AlGaInP LED晶圓。
實驗中分別討論不同flip-chip LED結構製程的可能性,以及新型基板的製作與開發,在成長低溫玻璃粉基板(Powder Glass Substrate)中,發現有結晶氣泡問題,在晶圓接合過程中,發現有接合不良以及半導體物質擴散到PGS中,形成不透明層,為克服以上兩問題,本研究自行開發破泡燒結方式以及透明介質層氧化鎳(NiO),成功解決氣泡與接合界面問題。
經由LED 晶粒製程,將其新基板LED製成平行電極結構,再透過金屬反射鏡可將其主動層所產生之光線反射出基板外,最後再討論透過ICP的Mesa蝕刻條件與深度到下電極後之光電特性。
In this study of process , the development of a new type of LED structure and novel wafer bonding technology , its application in the AlGaInP LED structure is different from the original of wafer bonding technology.
First, the low-temperature glass powder was crystallize to form a glass lump , and use the wafer of AlGaInP LED epitaxy with MB (metal bonding) structure.Through direct bonding process which weld the glass lump on AlGaInP epitaxial layer by RTA(Rapid Thermal Annealing) equipment, and then remove the original GaAs substrates so this study fabricate a transparent substrate to form a novel AlGaInP LED wafer.

The part of experiments with this study ,we fabricate three different flip-chip LED structure and discuss the process possibility respectively.
At experiments of novel Powder Glass Substrate that we found air bubble at crystallizing process and semiconductor component diffusion to PGS region at bonding interface so that cause the opaque region. In order to overcome the above two issues, this study developed the breaking bubble sintering process and nickel oxide (NiOX) transparent thin film, successfully resolved the issue of fore-mentioned.

By the LED chip on wafer process, will be fabricated a new LED substrate structure with parallel electrodes, and then through the metal reflector layer could be reflected light from active layer. Finally, we discuss the electro-optical properties with different mesa depth and electrode condition.
中文摘要 --------------------------------------------------------------------------- i
英文摘要 --------------------------------------------------------------------------- ii
誌謝 --------------------------------------------------------------------------- iii
目錄 --------------------------------------------------------------------------- iv
表目錄 --------------------------------------------------------------------------- vi
圖目錄 --------------------------------------------------------------------------- viii
第一章 緒論
1.1 前言--------------------------------------------------------------------- 1
1.2 AlGaInP發光二極體之介紹--------------------------------------- 3
1.3 覆晶式LED(flip chip)----------------------------------------------- 8
1.4 研究動機--------------------------------------------------------------- 10
第二章 文獻回顧--------------------------------------------------------------- 11
2.1 LED發光原理-------------------------------------------------------- 11
2.1.1 LED發光現象-------------------------------------------------------- 11
2.2 LED發光效率與光取出--------------------------------------------- 15
2.3 接面溫度--------------------------------------------------------------- 19
2.4 晶圓鍵合-------------------------------------------------------------- 20
2.5 低溫玻璃粉------------------------------------------------------------ 28
第三章 實驗步驟及設備------------------------------------------------------ 31
3.1 實驗目的--------------------------------------------------------------- 31
3.2 實驗流程--------------------------------------------------------------- 32
3.2.1 新透明基板的成長--------------------------------------------------- 34
3.2.2 新基板LED微影製程----------------------------------------------- 35
3.2.3 ICP蝕刻--------------------------------------------------------------- 36
3.3.4 無外力之晶圓接合--------------------------------------------------- 38
3.2.5 基板研磨--------------------------------------------------------------- 40
3.2.6 蒸鍍系統-------------------------------------------------------------- 42
3.2.7 化學氣相沉積系統--------------------------------------------------- 44
3.3 實驗量測部份--------------------------------------------------------- 45
3.3.1 積分球------------------------------------------------------------------ 45
3.3.2 高度量測--------------------------------------------------------------- 46
第四章 結果與討論------------------------------------------------------------ 47
4.1 不同flip chip結構可能性討論------------------------------------ 47
4.2 Flip chip新透明基板製作方法開發------------------------------- 51
4.2.1 玻璃結晶與脫模分析------------------------------------------------ 51
4.2.2 玻璃結晶氣泡問題之克服------------------------------------------ 54
4.3 接合界面問題克服與分析------------------------------------------ 63
4.4 AlGaInP ICP 蝕刻與I-V電性量測------------------------------- 69
第五章 結論與未來展望------------------------------------------------------ 72
5.1 結論--------------------------------------------------------------------- 72
5.2 未來展望--------------------------------------------------------------- 72
參考文獻 --------------------------------------------------------------------------- 73
[1]http://ecaaser3.ecaa.ntu.edu.tw/weifang/led/LED-industry.htm
[2]F.M.Steranka et al. Phy.Stat.Sol.(a),194,380(2002)
[3]E.F.Schubert Cambridge Uniy press
[4]F.A.Kish and R.M.Fletcher,”Chapter 5 in Semiconductor & Semimetals” Vol. 48 ,149(1997)
[5] K.H.Huang et al. Appl. Phys.Lett.61,1045(1992)
[6] F.A Kish,Encycl. Chem. Technol. 15 ,217(1995)
[7]R.M.Fletcher et al.J.Electron.Mater..20,1125(1991)
[8]史光國編著, ”現代半導體發光及電射二極體材料技術”,全華科技, 91年3月
[9] H.Sugawara et al.Jpn. j. Appl. Phys. 58,2446(1992)
[10] H. Sugawara, M. Ishikawa, and G. Hatakoshi, “High-efficiency InGaAlP/GaAs visible light-emitting diodes,” Appl. Phys. Lett., vol. 58, pp. 1010–1012, 1991.
[11] C. P. Kuo, R. M. Fletcher, T. D. Osentowski, M. C. Lardizabal, M. G. Craford, and V. M. Robbins, “High performance AlGaInP visible light-emitting diodes,” Appl. Phys. Lett., vol. 57, pp.2937–2939, 1990.
[12] R. M. Fletcher, C. P. Kuo, T. D. Osentowski, and V. M.Robbins, “Light-emitting diode with an electrically conductive window,” U.S. Patent 5 008 718, 1991.
[13 ] R. M. Fletcher, K.-H. Huang, C. P. Kuo, J. Yu, and T. D.Osentowski, “ Light-emitting diode with a thick transparent layer,” U.S. Patent
[14] K. Itaya, H. Sugawara, and G. Hatakoshi, “InGaAlP visible light laser diodes
and light-emitting diodes,” J. Cryst. Growth, vol. 138, pp. 768–775, 1994.
[17] F. A. Kish and R. M. Fletcher, High Brightness Light Emitting Diodes, vol. 48
of SEMICONDUCTORS AND SEMIMETALS, pp. 149–226. Academic Press,
1997.
[15] Koike, Masayoshi, Yamasaki, Shiro, Tezen, Yuta, Nagai, Seiji, Iwayama, Sho,
Kojima, Akira, Uemura, Toshiya, Hirano, Atsuo, Kato, Hisaki, Toyoda Gosei Co., Ltd.”GaN-based MQW light-emitting devices“ Proc. SPIE Vol. 3938, p.24-29,(2000)
[16]J.J.Wierer et al SPIE Proc.4278,127(2001)
[17]http://uww.emcs.org/r6/scv/eds/slides/20051213-George-Craford-Lumileds.pdf.
[18]「高功率LED熱管理技術與量測」,工業材料雜誌256期,pp.180-189 ,2008.
[19] IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 10, OCTOBER 2002
[ 20 ]Optoelectronics & Photonics : Principles & Practices,S.O.Kasap ,Canada
[21] D. A. VANDERWATER, PROCEEDINGS OF THE IEEE, VOL. 85, NO. 11, NOVEMBER 1997.
[22]M.R.Kramas et al.Appl.Phys.Lett.75,2365(1999)
[23] Narendra, N., Y. Gu and R. Hosseinzadeh (2004)Estimating junction temperature of high-flux white LEDs,light-emittingdiodes:Research,
manufacturing, and application VIII, Proceedings of SPIE 5366, 158-160.
[24] Gu, Y. and N. Narendra (2004) A non-contact method for determining junction temperature of phosphor-converted white LEDs. 3rd Conference on Solid State Lighting,Proceedings of SPIE 5187, 107-114.
[25] Hong, E. and N. Narendran (2004) A method for projecting usful life of LED lighting system. 3rd Conference on Solid State Lighting, Proceedings of SPIE 5187, 93-99.
[26] Narendra, N., Y. Gu and R. Hosseinzadeh (2004)Estimating junction temperature of high-flux white LEDs,light-emitting diodes: Research, manufacturing, and application VIII, Proceedings of SPIE 5366, 158-160.
[27] Xi, Y. and E. F. Schubert (2004) Junction-temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method. Applied Physics Letters, 85(12), 2163-2165.
[28]晶圓鍵合之方法 ; 中華民國發明專利94146912.
[29]. M. Alexe and U. GÖsele, “Wafer Bonding Application and Technology”, Springer, 2004, Berlin.
[30]. U. GÖsele, Y. Bluhm, G. Kästner, P. Kopperschmidt, G. Kräuter, R. Scholz, A. Schumacher, St. Senz, and Q.-Y. Tong, Y.-L. Chao, and T. H. Lee, “Fundamental issues in wafer bonding” J. Vac. Sci. Technol. A, 17 (4), p.1145, 1999.
[31]. C. F. Jerez-Hanckes, D. Qiao and S. S. Lau, “A study of Si wafer bonding via methanol capillarity”, Materials Chemistry and Physics 77, 751–754, 2002.
[32]. W. B. Yu, J. Wei, C. M. Tan and G. Y. Huang, “Mathematical model of low-temperature wafer bonding under medium vacuum and its application”, IEEE Transactions on Advanced Packaging 28 (4) p.650-658, 2005.
[33]講義”封裝製程”;國立台灣海洋大學機械與機電工程學系助理教授;吳志偉.
[34]講義“晶片黏貼技術於光電元件之應用”; 中興大學精密工程研究所-洪瑞華.
[35] H.Sugawara et al.Jpn. j. Appl. Phys. 58,2446(1992)
[36] H. Sugawara, M. Ishikawa, and G. Hatakoshi, “High-efficiency InGaAlP/GaAs visible light-emitting diodes,” Appl. Phys. Lett., vol. 58, pp. 1010–1012, 1991.
[37] R. H. Horng et al, Appl. Phys. Lett., vol. 75, pp. 3054–3056, 1999.
[38] IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 10, OCTOBER 2002
[39]. R. Morena, US Patent 5,470,804(1995).
[40]. H. Kawamura, A. Misumi, K. Odawara, US Patent4,256,495(1981).
[41]. M. Hayashi, US Patent 5,534,469(1996).
[42]. T.H. Park, C.S. Kim, and S.H. Moon, US Patent 5,700,744(1997).
[43]. Solder Glasses, “Treatise on Materials Science and Technolog,” Vol.17.
[44]碩士論文” 無鉛低熔點SnO-MgO-P2O5玻璃 “大同大學,葉志賢2004
[45]碩士論文”具有銅基板之磷化鋁銦鎵發光二極體的製作”中央大學, 蔡曜駿 2005
[46] T. Maeda, J.W. Lee et.al. “Inductively coupled plasma etching of III–V semiconductors in BCl -based chemistries,” Applied Surface Science , vol. 143,pp. 174-182,1999.
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