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研究生:蕭文應
研究生(外文):Wen-Ying Hsiao
論文名稱:TFT製程中抑制Hillock之研究
論文名稱(外文):A STUDY OF SUPPRESSING HILLOCK FORMATION IN THIN FILM TRANSISTOR PROCESS
指導教授:周勝次
學位類別:碩士
校院名稱:元智大學
系所名稱:電機工程學系
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2009
畢業學年度:97
語文別:中文
論文頁數:81
中文關鍵詞:顯示器閘極金屬層小山丘
外文關鍵詞:TFTGate metal lineHillock
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在主動矩陣液晶顯示器中,純鋁和鋁合金是非常重要的導電材料。在閘極金屬層上尋找低電阻率和具有熱穩定性,並能夠抑制小山丘突出(Hillock)的材料為一主要研究題目。本研究使用純鋁和鋁鎳鑭靶材(Aluminum Nickel Lanthanum)搭配覆蓋鉬(molybdenum)金屬,利用直流磁控式物理濺鍍裝置形成薄膜,並利用殘氣分析儀(RGA)監控真空室的殘氣狀況。Hillock的發生會受到靶材材料、薄膜厚度、退火溫度及成膜速率的影響。同時對真空室內N2殘留量也是重要的因素之一。研究結果使用鋁鎳鑭的靶材在N2殘氣值為2×10-4Pa時成膜時不會產生Hillock。膜厚超過3000Å以上時,鉬覆蓋鋁鎳鑭合金在抑制Hillock方面更優於純鋁,且有接近純鋁的電阻率。鋁鎳鑭合金能夠提高生產良率並能實際用在TFT面板廠大量生產。
Al and Al alloy are very important conducting materials for Active-matrix liquid crystal display (AMLCD).To find a low resistivity and the high thermal stability which can suppress hillocks formation material in gate metal line. The pure Al and AlNiLa (Aluminum Nickel Lanthanum) were covered with Mo (molybdenum) and by dc magnet scan sputtering formed the thin film. The RGA (residual gas analysis) leak detector was monitored the chamber. The Hillock formation was affected by target material, film thickness, anneal temperature and the deposition rate. The residual gas N2 was also an important factor for production. The AlNiLa thin film was not easy to find hillock while N2 residual gas of chamber at 2×10-4Pa. The AlNiLa is better than pure Al to suppress the hillock while thin film thickness over 3000Å and the resistivity was close to the pure Aluminum after annealing. It can improve the yield and can use in TFT LCD factory for mass production.
書名頁 i
論文口試委員審定書 ii
授權書 iii
中文摘要 iv
英文摘要 v
誌謝 vi
目錄 vii
表目錄 ix
圖目錄 xi
第一章、緒論 1
1.1 TFT介紹 3
1.2 TFT金屬薄膜介紹 7
1.3文獻回顧 9
1.3.1小山丘突出Hillock的成因 9
1.3.2薄膜的成長和微結構 13
1.3.3合金靶材對Hillock的影響 15
1.3.4退火溫度對Hillock的影響 18
1.3.5表面粗糙度對Hillock的影響 20
1.3.6膜厚對Hillock的影響 22
1.3.7其他抑制Hillock的方法與電阻率 25
第二章、研究方法 27
2.1研究背景與動機 27
2.2研究方法 28
2.3使用設備及儀器 28
2.3.1 PVD濺鍍設備 28
2.3.2原子力顯微鏡AFM(Atomic Force Microscope) 31
2.3.4聚焦式離子束顯微鏡FIB(Focused Ion beam) 31
2.3.5掃描式電子微鏡SEM(Scanning Electron Microscope) 32
2.3.6穿透式電子顯微鏡TEM(Transmission Electron Microscope) 33
2.3.7薄膜應力量測儀 34
2.3.8殘氣分析儀RGA(Residue Gas Analysis) 36
2.3.9面電阻量測 36
第三章、實驗設計及結果 38
3.1實驗設計 38
3.2實際作法與過程 41
3.2.1成膜前洗淨 41
3.2.2 PVD金屬濺鍍 42
3.2.3曝光顯影 45
3.2.4蝕刻及剝膜 46
3.2.5 CVD化學氣相沉積 47
3.3實驗結果 47
3.3.1純鋁、鋁銅、鋁矽銅和鋁鎳鑭成膜速率 47
3.3.2以熱應力量測儀觀察AlNiLa薄膜應力變化 51
3.3.3以FIB觀察薄膜厚度與Hillock大小 52
3.3.4以SEM TEM觀察薄膜晶粒大小 54
3.3.5觀察純鉬覆蓋層後的薄膜表面狀態 57
3.3.6真空室不同殘氣值下成膜時,Hillock的比較 61
3.3.7以FIB觀察不同退火溫度時Hillock的變化 63
3.3.8不同退火溫度時電阻率的量測 66
第四章、實驗討論 67
4.1成膜速率與Hillock的討論 67
4.2 AlNiLa薄膜應力與Hillock的討論 68
4.3薄膜厚度與Hillock的討論 69
4.4晶粒大小與Hillock的討論 70
4.5鉬覆蓋層與Hillock的討論 71
4.6成膜真空室殘氣與Hillock的討論 72
4.7退火溫度與Hillock的討論 74
4.8膜厚和退火溫度與電阻率的討論 76
第五章、結論 79
參考文獻 80
[1].戴亞翔 “TFT-LCD面板的驅動與設計”五南書局p.51
[2].王木俊 “薄膜電晶體液晶顯示器”新文京書局p.8
[3].顧鴻壽 “光電液晶平面顯示器技術及應用”新文京書局p.74
[4].Toshisiro Kugimiya,Yoichiro Yoneda,Hiroshi Gotoh,Nobuyuki Kawakami, “Development of Al-Ni interconnection for TFT-LCD Using Direct contacts with ITO ans a-Si” ,神戶製鋼技報Vol.57 No.1,19 (Apr.2007)
[5].Yue Kuo, “Thin film transistors material and process volum1”,Kluwer Academic Publishers 315~316 and 325~326
[6].D. Kim, B. Heiland, W. D. Nix, E. Arzt, M. D. Deal, and J. D. Plummer, “Microstructure of Thermal Hillocks on Blanket Al Films”, J. Appl. Phys., 371, 278~82 (2000)
[7].F. d''Heurle, L. Berenbaum and R. Rosenberg ,“On the Structure of Aluminum Films”, Trans. Metall. Soc. AIME, 242, 502 (1968)
[8].Santoro, C. J., “Thermal Cycling and Surface Reconstruction in Aluminum Thin Films”, J. Electrochem. Soc. 116, 361 (1969)
[9].E. Philofsky, K. Ravi, E. Hall, J. Black ,“Surface reconstruction of aluminum metallization – a new potential wear out mechanism”, IEEE: 9th Annual Proc. Reliability Physics, New York, NY, USA, 120~128 (1971)
[10].Fredic Ericson, Nils Kristensen, Jan-AKe “A transmission electron microscopy study of hillocks in thin aluminum films”, J.Vac.Sci,(B9)(1991), 58
[11].陳楷林 “平面顯示器用鋁合金靶材之發展”工業材料雜誌, 197期,P.154 (2001)
[12].Eiji Iwamura, Taskashi Ohnishi,Kazuo Yoshikawa, “ A study of hillock formation on Al-Ta alloy films for interconnections of TFT-LCDs”,Thin solid film pp450~455 (1995)
[13].I.Petrov, P.B.Barna, L.Hultman, J.E.Greene “ Microstructural evolution during film growth”,American Vacuum Society 117 (2003)
[14].R. Behrisch (Ed.) “ Sputtering by Particle Bombardment I ”, Springer New York (1981)
[15].L.Eckertova, T.Ruzicka ,“Diagnostics and Applications of Thin Films” ,Ch.1&2, Institute of Physics Publishing (1993)
[16].J.A.Thornton, “Influence of Apparatus Geometry and Deposition conditions on the Structure and Topography of Thick Sputtered Coatings”, J. Vac. Sci. Tech. 11(4), 666 (1974)
[17].Takashi Onishi,EiJi Iwamura, Katsutoshi Takagi,Kazuo Yoshikawa, “Developments in Al-Nd Alloy Interconnections and Sputtering Targets for Liquid Crystal Displays”,神戶製鋼技報Vol.48,No.3, 29 (Dec.1998)
[18].Michal Zaborowaki,Piotr Dumania, “ Kinetics of hillock growth in Al and Al-alloys” , Microelectronic Engineering 50(2000) 309
[19].E. A. Marquis and D.N. Seidman, “Nanoscale Structural Evolution of Al3Sc Precipitates in Al(Sc) Alloys” , Acta Materialia, 49, 1909~1919 (2001)
[20].C.H. Chen, H.E. Huang, H.N. Wang, S.J. Lee, and C.H.Yeh, “Characteristic of Sputtering Thin Film of Al Alloy Target for Liquid Crystal Display”, Journal of Material Science and Engineering Vol.36, No.2 79~85 (2004)
[21].M. Zaborowski, M. Adamiec, and A. Barcz, “Hillock recognition by digital image processing”, Appl. Surf. Sci. 91, 246 (1995)
[22].D.K. Kim, W.D. Nix, R.P. Vinci, M.D. Deal and J.D. Plummer, “ Study of the effect of grain boundary migration on hillock formation in Al thin films”, Journal of Applied Physics 90 , 781 (2001)
[23].Soo-Jung Hwang,Je-Hun Lee,Chang-Oh Jeong,Young-Chang Joo, “Effect of film thickness and annealing temperature on hillock distribution in pure Al film” ,Scripta Materialia 56 17~20 (2007)
[24].Toshiaki Arai,Atsuya Makita,Yasunobu Hiromasu,Hrioshi Takatsuji “Mo capped Al-Nd alloy for both gate and data bus lines of liquid crystal display” ,Thin Solid Films 383, 287~291 (2001)
[25].S.C.Lo, M.W.Lin, C.C.Chiang, C.J.Lin, S.J.Chen, L.J.Lin, “Advanced DBFIB/ETTEM Techniques Application in Nano-Materials、Phase Change Memory and Display device”,Journal of Materials Science and Engineerin,Vol.203, 178 (2006)
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