[1] Nick M Sbrockey & Shanthi Ganesan ,”ZnO thin films by MOCVD” The Advanced Semiconductor Magazine 17 (2004)
[2] B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, and A. V. Rodina,” Bound exciton and donor–acceptor pair recombinations in ZnO” phys. stat. sol. 241 (2004) 231-260
[3] D.C. Look,” Recent advances in ZnO materials and devices” Materials Science and Engineering B80 (2001) 383–387
[4] Hiroyuki Kato, Michihiro Sano, Kazuhiro Miyamoto, Takafumi Yao, Bao-Ping Zhang, Katsuki Wakatsuki, and Yusaburo Segawa,” MBE growth of Zn-polar ZnO on MOCVD-ZnO templates” phys. stat. sol. (b) 241(2004) 2825–2829
[5] A. El-Shaer, A. Che Mofor, A. Bakin, M. Kreye, A. Waag,” High-quality ZnO layers grown by MBE on sapphire” Superlattices and Microstructures 38 (2005) 265–271
[6] E. M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H.-C. Semmelhack,K.-H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann,” High electron mobility of epitaxial ZnO thin films on c-plane sapphiregrown by multistep pulsed-laser deposition” APPLIED PHYSICS LETTERS 82 (2003)
[7] S.Christoulakis, M. Suchea, M. Katharakis, N. Katsarakis, E. Koudoumas and G. Kiriakidis,”ZnO Nanostructured Transparent Thin Films By PLD”Rev.Adv.Mater.Sci. 10 (2005) 331-334
[8] T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, and Y. Segawa,” Temperature dependence of near ultraviolet photoluminescencein ZnOÕ.Mg,Zn.O multiple quantum wells” APPLIED PHYSICS LETTERS 78 (2001)
[9] Jianhua Hu and Roy G. Gordon,” Textured aluminum-doped zinc oxide thin fil s from atmospheric pressurechemical-vapor deposition” J. Appl. Phys. 15 January 1992
[10] X. Li, S.E. Asher, B.M. Keyes, H.R. Moutinho, J. Luther, and T.J. Coutts,” p-Type ZnO Thin Films Grown by MOCVD” Conference and Exhibition (2005)
[11] Naoki Yoshii, Tetsuo Fujii, Rui Masuda, Shigetoshi Hosaka, Akira Kamisawa,Yoshinao Kumagai, Akinori Koukitu,” Growth of ZnO crystal on sapphire and nitridated sapphire substrates at 1000 °C by halide vapor phase epitaxy” Materials Letters 64 (2010) 25–27
[12] 李建蒼、李茂順、陳英忠、謝伯宗,” 以溶膠-凝膠法製備氧化鋅薄膜並探討其發光特性”
[13] Farid Jamali Sheini, I.S. Mulla, Dilip S. Joag, Mahendra A. More,” Influence of process variables on growth of ZnO nanowires by cathodic electrodeposition on zinc substrate” Thin Solid Films (2009)
[14] Marianna Kemell, Fre’de’ric Dartigues, Mikko Ritala, Markku Leskela,” Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells” Thin Solid Films 434 (2003) 20–23
[15] Xiaohu Huang, Guanghai Li, Lei Duan, Liang Li, Xincun Doua and Lide Zhang,” Formation of ZnO nanosheets with room-temperature ferromagnetism by co-doping with Mn and Ni” Scripta Materialia 60 (2009) 984–987
[16] Gregory J. Exarhos ap, Shiv K. Sharma,” Influence of processing variables on the structure and properties of ZnO films” Thin Solid Films 270 (1995) 27-32
[17]AL Dawar, JC Joshi ,"Semiconducting transparent thin films: their properties and applications" Journal of Materials Science, 1984 – Springer
[18]V. Sittinger , F. Ruske , W. Werner , C. Jacobs , B. Szyszka ,and D.J. Christie,” High power pulsed magnetron sputtering of transparent conducting oxides” Thin Solid Films 516 (2008) 5847–5859
[19]Jiaxiang Liu, Da Wu, Shengnan Zeng,” Influence of temperature and layers on the characterization of ITO films” journal of materials processing technology, 209 (2009) 3943–3948
[20]Gi-Seok Heo, In-Gi Gim, Jong-Woon Park, Kwang-Young Kim, Tae-Won Kim,” Effects of substrate temperature on properties of ITO–ZnO composition spread films fabricated by combinatorial RF magnetron sputtering ” Journal of Solid State Chemistry 182 (2009) 2937–2940
[21]M.A. Martnez , M.T. Gutie’rrez, and C. Maffiotte,” Chemical changes of ITO/p and ZnO/p interfaces as a function of deposition parameters” Surface and Coatings Technology 110 (1998) 68–72
[22] 王经纬,边继明,孙景昌,梁红伟,赵涧泽,杜国同,”Ag掺杂P型ZnO薄膜及其光电性能研究”China. Phys. Soc. 57 (2008)
[23] Y.R. Ryu, W.J. Kim, H.W. White,” Fabrication of homostructural ZnO p}n junctions” Journal of Crystal Growth 219 (2000) 419-422
[24] Y. Liu, C.R. Gorla, S. Liang, et al., J. Electron. Mater. 29 (2000) 60.
[25] T. Soki, Y. Hatanaka, D.C. Look, Appl. Phys. Lett. 76 (2000) 3257.
[26] Z.K. Tang, G.K.L. Wong, P. Yu, et al., Appl. Phys. Lett. 72 (1998) 3270.
[27]黃瑞雄,顏溪成,”漫談電化學” 科學發展 359 (2002)[28] 鄭志鵬,”電化學-電池與電解” (2007)
[29] M. T. S. Nair, L. Guerrero, O. L. Arenas P. K. Nair, “Chemically Deposited Copper Oxide Thin Film: Structural, Optical and Electrical Characteristics” Thin solid films, 167 (1988) 309.
[30]Z. C. Jin, I. Hamberg, and C. G. Granqvist,”Optical Properties of Sputter-deposited ZnO:Al Thin Films”J. Appl. Phys. 64 (1998)