我們利用Al (120 nm)/MoO3 (4 nm)/NPB (45 nm)/MADN:BCzVB (30 nm, 4 %)/BCP (2 nm)/Alq3:DCJTB (25 nm, 1 %)/Bphen (30 nm)/Al (20 nm)結構製作出白光頂部發光有機發光二極體(top emitting organic light-emitting diode，TEOLED)。將電子移動率高的Bphen加入於電子傳輸層中，能有效使電子從陰極注入到發光層，進而提升載子在發光層中達到平衡並提高再結合機率。此外，Bphen也擁有相當好的電洞阻擋能力，使得更多電洞停留在發光層中，減少未進行再結合的電洞到達陰極。藉由改變Alq3:DCJTB的厚度來調整其色座標以達到白光；色座標在9 V~15 V大約偏移(0.02, 0.02)。此外，我們亦使用MADN為藍光主體，BCzVB和DCJTB分別為藍光及紅光客體，製作共掺雜之藍光與橘光2層發光層並利用互補色方法來獲得白光。
使用Al-Al電極結構可有效節省元件製作時間，且TEOLED元件結構可以完全使用熱蒸鍍系統製作。

A white top emitting organic light-emitting diode (TEOLED) with a structure of Al (120 nm)/MoO3 (4 nm)/NPB (45 nm)/MADN:BCzVB (30 nm, 4 %)/BCP (2 nm)/Alq3:DCJTB (25 nm, 1 %)/Bphen (30 nm)/Al (20 nm) was successfully fabricated by vapor deposition. As introducing higher electron mobility material Bphen as electron transporting layer, electron injection from cathode to emission layer (EML) would be increased, resulting in enhancement of recombination ratio in the EML. Furthermore, Bphen also has an excellent hole blocking ability, hence, more holes would be obstructed in the EML at the Alq3:DCJTB interface. By changing the thickness of Alq3:DCJTB layer to adjust the color coordinates to white emission. In addition, MADN blue host, BCzVB blue guest, and DCJTB red guest were used to prepare the blue and orange EMLs, and the white light was obtained by complementary color mixing.
Using the Al-Al electrode structure, the production time is saved; meanwhile, the TEOLED can be fabricated completely in a thermal evaporation system.

摘 要 III
Abstract IV
Table Captions IX
Figure Captions X
Chapter 1 Introduction 1
1-1 The development of display 1
1-2 The advantages of OLED 2
1-3 Application of the OLED 3
Chapter 2 Electroluminescence principle and device structure 4
2-1 Principle of electroluminescence (EL) 4
2-1-1 Principle of light emission 4
2-1-2 Energy transfer 5
2-2 Materials of OLED 6
2-2-1 Hole transport layer 6
2-2-2 Electron transport layer 6
2-2-3 Hole injection layer 7
2-2-4 Hole blocking layer 8
2-2-5 Materials of anode 8
2-2-6 Materials of cathode 9
2-3 Structure of the device 9
2-3-1 White-emission OLED structure 9
2-3-2 Multi-emission layer structure 10
2-3-3 Top-emitting OLED structure 11
Chapter 3 Experiments and measurement system configuration 13
3-1 Materials 13
3-2 The treatment of substrate 14
3-3 Deposition system 15
3-4 Deposition of organic and mental thin films 16
3-5 Efficiency calculation 17
3-6 Measure the system 18
Chapter 4 Results and discussion 19
4-1 Al (120 nm)/MoO3 (x nm)/NPB (45 nm)/MADN (30 nm)/Bphen (30 nm)/Al (20 nm) 20

4-2 Al (120 nm)/MoO3 (4 nm)/NPB (45 nm)/MADN:DCJTB (30 nm, x %)/Alq3 (30 nm)/Al (20 nm) 21

4-3 Al (120 nm)/ MoO3 (4 nm) / NPB (45 nm)/MADN: DCJTB (30 nm, x %)/Alq3 (30 nm)/LiF (1 nm)/ Al (20 nm) 23

4-4 Al (120 nm)/MoO3 (4 nm)/NPB (45 nm)/MADN:DCJTB (30 nm, 2 %)/Alq3 (30 nm)/LiF (1 nm)/Al (20 nm)/Alq3 (x nm) 25

4-5 Al (120 nm)/MoO3 (4 nm)/NPB (45 nm)/Alq3:DCJTB (30 nm, x %)/Bphen (30 nm)/Al (20 nm) 27

4-6 Al (120 nm)/MoO3 (4 nm)/NPB (45 nm)/MADN:BCzVB (30 nm, x %)/Bphen (30 nm)/Al (20 nm) 29

4-7 Al (120 nm)/ MoO3 (4 nm)/NPB (45 nm)/MADN:BCzVB (30 nm, 4%)/BCP (2 nm)/Alq3:DCJTB (x nm, 1%)/Bphen (30 nm)/Al(20 nm) 31

Chapter 5 Conclusion 35
References 37

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