(3.238.7.202) 您好!臺灣時間:2021/02/26 16:05
字體大小: 字級放大   字級縮小   預設字形  
回查詢結果

詳目顯示:::

我願授權國圖
: 
twitterline
研究生:陳建榮
研究生(外文):J.R.Chen
論文名稱:添加氧化鑭對鈦酸鋇電性之影響
指導教授:林明宏林明宏引用關係
學位類別:碩士
校院名稱:國立高雄應用科技大學
系所名稱:機械與精密工程研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
中文關鍵詞:鈦酸鋇摻雜物燒結溫度介電常數介電損失
相關次數:
  • 被引用被引用:0
  • 點閱點閱:538
  • 評分評分:系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔系統版面圖檔
  • 下載下載:0
  • 收藏至我的研究室書目清單書目收藏:0
鈦酸鋇是很重要的陶瓷材料,在電子陶瓷方面應用非常廣泛,在室溫時是正方晶體的鈣鈦礦鐵電結構,參雜微量元素後會轉為半導性且有正溫電阻效應(Positive Temperature Coefficient of Resistance, PTCR)。
實驗藉由參雜不同比例的氧化鑭(0~0.4mol%)來改變其電阻率,觀察直流電阻率在室溫至 200℃之變化,同時藉由電子式顯微鏡(SEM)來觀察鈦酸鋇之微結構。實驗發現添加0.2 mol% 氧化鑭的鈦酸鋇因鑭離子取代鋇離子,而有最小的電阻值和最佳的正溫電阻(Positive Temperature Coefficient of Resistance, PTCR)效應,其居里溫度(Curie Temperature, Tc)隨鑭含量的增加向正溫方向移動但差異不大,同時材料的晶粒尺寸不斷增大,但隨著添加量增加,晶粒成長又會受到抑制。
中文摘要 I
Abstract II
誌謝 III
目錄 IV
表目錄 VII
圖目錄 VIII
第一章 序論 1
1-1 前言 1
1-2 研究方向及目的 2
第二章 理論基礎與文獻回顧 3
2-1 鈦酸鋇基礎理論 3
2-1-1 鈦酸鋇晶體及結構特性 3
2-2 鈦酸鋇介電特性 8
2-2-1 極化機制及頻率特性 11
2-2-2 介電常數(Dielectric constant, k ) 19
2-2-3 介電損失 19
2-3 燒結理論 22
2-3-1 固相燒結(Solid Phase Sintering) 22
2-3-2 液相燒結(Liquid Phase Sintering) 27
2-4 鈦酸鋇燒結特性 29
2-4-1 影響燒結的因素 30
2-4-2 添加物對燒結行為的影響 30
2-4-3 起始粉體粒徑大小及分布的影響 31
2-4-4 晶格擴散增益 32
2-5 添加物對鈦酸鋇的影響 32
2-5-1 添加物對居里溫度偏移影響 32
2-5-2 添加物對介電性的影響 34
2-5-3 添加物對微結構的影響 34
2-6 PTC(正溫度係數效應) 35
2-6-1 PTC應用 35
2-6-2 鈦酸鋇之PTC特性 36
2-6-3 添加物對鈦酸鋇PTC陶瓷的影響 39
第三章 實驗方法與步驟 41
3-2 實驗流程 41
3-2-2 試片壓製(造粒) 45
3-2-3 試片燒結 46
3-2-4 試片端面銀電極披覆 49
3-3 性質測試及分析 50
3-3-2 X光繞射分析(XRD) 51
3-3-3 電阻與溫度變化之對應關係 51
3-3-4 介電性質量測 52
3-3-5 SEM微結構觀察 52
第四章 結果與討論 53
4-1 燒結 53
4-2 添加氧化鑭對鈦酸鋇性質的影響 55
4-2-1 添加氧化鑭對介電常數之影響 55
4-2-2 添加氧化鑭對電阻之影響 60
4-2-3 添加氧化鑭對PTCR之影響 61
4-2-4 添加氧化鑭對微結構之影響 62
第五章 結論 72
第六章 參考文獻 74
[1] R. Ramesh, “Thin Film Ferroelectric Materials and Devices,” Kluwer Academic, 1997.

[2] A. J. Moulson and J. M. Herbert, “Electroceramics: Materials,
Properties, and Applications, ”Chapman and Hall, 1990.

[3] J. K. Lee and K. S. Hong, “Roles of Ba/Ti Ratios in the Dielectric
Properties of BaTiO3 Ceramics,” J.Am. Ceram. Soc.,pp.84, 2001.

[4] W. D. Kingery, H. K. Bowen, and D. R. Uhlmann, “ Introduction to
ceramics, ” John Wiley and Sons, 1976.

[5] C. Kittel, “Introduction to solid state physics, 7th ed., ” John Wiley and
Sons, 1996.

[6] M. Barsoum, “ Fundamentals of ceramics, ” McGraw Hill, 1994.

[7] G. Burns, “ Solid state physics, ” (Academic Press, 1985).

[8] M. E. Lines and A. M. Glass, “Principles and applications of ferroelectrics and related materials, ” (Oxford University Press, 2001).

[9] G. Arlt, D. Hennings, and G. de With, “Dielectric properties of fine-
grained barium titanate ceramics,” J.Appl.Phys.,Vol.58,pp.1619-1625, 1985.

[10] 吳朗,“電工材料,”滄海書局,1999.

[11] W. Bolton, “ Engineering Materials Technology, 3rd Ed.,” 1998.

[12] M. F. Ashby, “A First Report on Sintering Diagrams,” Acta Metal.,Vol. 22,pp.275-289, 1974.
[13] 林明宏博士,“陶瓷製程講義,” 2008.

[14] W. D. Kingery, H. K. Bown and D. R. Uhlmann (Eds.), “Introduction to Ceramics, 2nd Ed.,”pp.61,pp.461,pp.489,pp.498,pp.900, John, Wiley & Sons, 1991.

[15] M. F. Yan, R. M. Cannon, and H. K. Bowen, “ in Ceramic
Microstructures ,”Vol.76,pp.276, 1976.

[16] R. Wernicke, “The Influence of Kinetic Processes on the Electrical Conductivity of Donor-doped Ceramics,” Phys. State. Sol.(a),Vol.47,pp.139, 1978.

[17] L. A. Xue, Y. Chen, R. J. Brook, “The effect of lanthanide contraction on grain growth in lanthanide-doped BaTiO3,” J. Mat. Sci.,Vol.7,pp.1163, 1988.

[18] M. F. Yan, “Microstructural Control in the Processing of Electronic. Ceramics,”Mat. Sci. Eng.,Vol.48,pp.53, 1981.

[19] J. B. Macchesney, P. K. Gallagher and F. V. Dimarcello, “ Stabilized barium titanate ceramics for capacitor dielectrics,” J. Am. Ceram. Soc.,Vol.46,pp.197, 1963.

[20] S. B. Desu and D. A. Payne, “Interfacial segregation in pervoskites: III, microstructure and electrical properties, ”J. Am. Ceram. Soc.,Vol.73,pp.3407, 1990.

[21] D.F.K.Henning et al, “Temperature-Stable Dielectrics Materials in the System BaTiO3-Nb2O5-CO3O4,” J.Europ.Ceram.Soc.,Vol.14, pp.462-471, 1994.

[22] C. Herring, “Effect of Change of Scale on Sintering Phenomena,” J. Appl. Phys.,Vol.21,pp.31, 1950.

[23] W. H. Rhodes, “Agglomerate and Particle Size Effects on Sintering Yttria-stabilized Zirconia, ” J. Am. Ceram. Soc.,Vol.64,pp.19, 1981.
[24] F. W. Dynys, and J. W. Halloran, “Influence of Aggregates on Sintering, ” J. Am. Ceram. Soc.,Vol.67,pp.596, 1984.

[25] A. J. Moulson and J. M. Herbert,“ Electroceramics: Materials,Properties, and Applications, ” Chapman & Hall , 1900.

[26] A. Beauger, J. C. Mutin, and J.C. Niepce,“Role and Behavior of Orthotitanate Ba2TiO4 during the Processing of BaTiO3 Based
Ferroelectric Ceramics,” J. Mater. Sci.,Vol.19,pp.195-201, 1984.

[27] J. Daniels, K. H. Hardtl, D. Hennings and R. Wernicke, “Defect chemistry and electrical conductivity of doped barium titanate ceramics, Part I. electrical conductivity at high temperatures of donor-doped barium titanate ceramics,” Philips Res. Rep., Vol.31,pp. 487-504, 1976.

[28] N. G. Eror and D. M. Smyth, “ in the Chemistry of Extended Defects in
Nonmetallic Solid, ” Edited by L. Eyring and M. O. Keefe, pp.62-74, 1970.

[29] K. S. Mazdiyasni and L. M.lawn, J. Am. Ceram. Soc.,Vol.54,pp. 539-43, 1971.

[30] C. J. Ting, C. J. Peng, H. Y. Lu and S. T. Wu, “Lanthanum-magnesium and lanthanum-manganese donor-acceptor-codoped semiconducting barium titanate, ” J. Am. Ceram. Soc.,Vol. 73,pp.329-34, 1990.

[31] A. Yainaji, Y. Enomoto, T. Murakami and K. Kinoshita., “Preparation
Characterization and Properties of Dy-Doped Small-Grained Barium Titanate,” J. Am. Ceram. Soc.,Vol.60,pp.97-101, 1977.

[32] T. M. Harkulich, J. Magder, M. S. Vukasovich and R. J. Lockhart, and R. J. Lockhart, “Ferroelectrics of Ultrafine Particle Size: II,” J. Am. Ceram. Soc.,Vol.54,pp.548-553, 1971.

[33] M. Kahn, “Preparation of Small-Grained and Large-Grained Ceramics. 2nd ed.,” Wiley,pp.461-462, 1976.

[34] M. T. Buscagila, V. Buscaglia, M. Viviani, P. Nanni, M. Hanuskova, “Influence of foreign ions on the crystal structure of BaTiO3,” J. Eur. Ceram. Soc.,Vol.20, 1997-2007.

[35] I. Zajc and M. Drofenik, “Grain Growth and Densification in Donor-Doped BaTiO3,” Br. Ceram. Trans. J.,Vol.88,pp.223-225, 1989.

[36] P. Hansen, D. Hennings and H. Schreinemacher, “High-K Dielectric Ceramics Donor/Acceptor-Codoped(Ba1-xCax)(Ti1-yZry)O3(BCTZ),” from J. Am. Ceram. Soc.,Vol.81,pp.1369-1373, 1998.

[37] L. M. Levinson, “Grain Boundary Phenomena in Electronic Ceramics,” The Am.Ceram. Soc., Inc., pp.138-154, 1981.

[38] E. Andrich,“Properties and applications of ptc thermistors,” Electr. Appl.,Vol.26,pp.123-144, 1965-66.

[39] O. Saburi and K. Wakino, “Processing Techniques and Applications of Positive Temperature Coefficient Thermistors,” IEEE Trans. Comp. Parts,Vol.10,pp.53-67, 1963.

[40] T. Fukami and H. Tsuchiya, “Dependence of Resistivity on Donor Dopant Content in Barium Titanate Ceramics,” J.Appl. Phys.,Vol 18,pp.735, 1979

[41] G. Arlt, D. Hennings, and G. de With, “Dielectric properties of fine-
grained barium titanate ceramics,” J.Appl. Phys.,Vol.58, pp.1619-1625, 1985.

[42] G. H.Jonker, “Som aspects of semiconducting Barium titanate,” Solid State Electro., Vol.7,pp.895-903, 1964.

[43] J. T. Ching, H. Y. Lu, “Lanthanum-Mgnesium and Manganese Donor-Accepator -Codoped Semiconducting Barium Titanate,” J.Am. Ceram. Soc.Vol.73 ,pp.329-334, 1990.

[44] B. Seshu, A. David and Payne, “ Interfacial Segregation in Perovskites :Ⅲ, Microstrure and Electrical Properties,” J. Am. Ceram. Soc.,Vol.73,pp. 3407-15, 1990.

[45] S. B. Desu, “The Nature of Defects in Semiconducting Barium Titanate,” Ceram. Transaction ,Vol.8 ,pp.157-168, 1990.

[46] D. F. K. Hennings, “Recrystallization of Barium Titanate Ceramics,”
Sci. Ceram., Vol.12,pp. 405, 1984.

[47] L. A. Xue, Y. Chen, and R. J. Brook, “The influence of ionic radii on the incorporation of trivalent dopants into BaT iO3,” Mater. Sci. and Eng., B1, pp.193-201, 1988.

[48] J. Qi , W. Chen , Y. Wu , L. Li , “Improvement of the PTCR Effect in Ba1-xSrx TiO3 Semiconducting Ceramics by doping of Bi2O3 Vapor During Sentering ,” J Am. Ceram. Soc ., pp.81, 437, 1988.
QRCODE
 
 
 
 
 
                                                                                                                                                                                                                                                                                                                                                                                                               
第一頁 上一頁 下一頁 最後一頁 top
系統版面圖檔 系統版面圖檔