化學機械拋光(Chemical mechanical Polishing, CMP)已是半導體工廠慣常使用之標準製程。在CMP製程中，為了讓化學機械拋光製程穩定且持續進行及維持晶圓品質，拋光墊必須適當的以鑽石修整器來進行修整，以恢復其表面形貌與特性。近年來晶片價格不斷下降，致使鑽石碟的成本亦需不斷壓低，拋光墊與鑽石修整器之消耗，影響廣大半導體廠的成本、利潤與品質。為了因應這個趨勢，本研究從鑽石碟之設計切入，以延長鑽石碟與拋光墊的壽命為目標。
本研究之新式鑽石修整器稱為組合式鑽石修整器，其製作方式為首先將鑽石硬銲於圓板上(約20mm)，製成較小的鑽石碟，再利用環氧樹脂(epoxy resin)將12個小鑽石碟黏貼在直徑100mm之圓板外環上，完成組合式鑽石修整器。其特色較易控制鑽石分佈且減少鑽石使用量及改善傳統鑽石修整器製作失敗機率，亦可輕易更換小鑽石碟，提高製作鑽石碟的成功機率，降低產品成本。本研究採用碎鑽、圓鑽及混鑽三種組合式鑽石修整器，碎鑽為晶形較不完整且不規則，圓鑽為晶形完整且規則，混鑽為混合碎鑽與圓鑽。並且亦探討組合式鑽石修整器修整壽命及修整後之拋光墊表面特性，以及其對氧化層晶片表面品質之影響，並且與傳統鑽石修整器作一比較。
實驗結果發現組合式鑽石修整器除了能獲得較佳鑽石尖點高度分佈外，亦能降低製作成本。實驗亦發現組合式鑽石修整器之拋光墊消耗率明顯低於傳統修整器，從拋光墊消耗觀點而言，組合式鑽石修整器可延長拋光墊壽命，降低CMP成本。另外實驗亦指出採用混鑽之組合式鑽石修整器修整後之晶圓移除率比傳統鑽石修整器來得高，而且晶圓移除率隨修整時間增加而變動的幅度較小，是未來值得推薦之鑽石修整器。

Chemical mechanical polishing (CMP) is one of the essential processes employed in industry to manufacture semiconductor devices. In order to allow CMP to continue, the polyurethane pad that is used to hold abrasive particles must be dressed by diamond pad conditioner periodically to maintain its surface texture and to regenerate the asperity structure of the pad that is optimized for polishing wafers efficiently. However the conditioning process also leads to polishing pad and the diamond dresser consumption, this influence semiconductor factory cost and profit. Therefore, a new design of diamond conditioner is manufactured, called combined diamond disk. The combined diamond disk used is by attaching 12 diamond disks, approximately 20mm in diameter, onto a metal disk, approximately 100mm in diameter, with an organic matrix to reduce disk cost and to prolong the pad and diamond conditioner life. The dressing characteristics of pad surface textures are studied by comparing them with traditional diamond conditioners, and the polishing rates of silicon dioxide by the resulting pad are studied as well.
It is found that combined diamond disk enable the manufacturer to tightly control the diamond leveling and reducing the production cost. The height variations of the diamond tips of the combined diamond disk are significantly smaller than that of the traditional diamond disk. Experimental results reveal that the pad dressing rate of a combined diamond disk is lower than that of a conventional diamond disk. The lifetime of the pad is expected to have been prolonged, consequently lowering the cost of the CMP process. The removal rate of the oxide film is higher for the combined diamond disk than for the traditional diamond disk, and hence wafer productivity is somewhat increased.

誌謝 ---------------------------------------------- I
中文摘要 ----------------------------------------- II
英文摘要 ---------------------------------------- III
目錄 --------------------------------------------- IV
圖目錄 ------------------------------------------- VII
表目錄 ------------------------------------------- XIII
一、緒論----------------------------------------------- 1
1.1 前言---------------------------------------------- 1
1.2 研究動機與目的------------------------------------- 4
1.3 文獻回顧------------------------------------------- 5
二、 化學機械拋光相關理論------------------------------- 13
2.1 化學機械拋光原理---------------------------------- 13
2.1.1 拋光行為--------------------------------------- 13
2.1.2 修整行為--------------------------------------- 14
2.2 化學機械拋光需求性------------------------------ 16
2.3 化學機械拋光相關耗材---------------------------- 17
2.3.1 鑽石修整器------------------------------------- 17
2.3.2 拋光墊---------------------------------------- 21
2.3.3 拋光液---------------------------------------- 23
2.4 化學機械拋光製程參數---------------------------- 23
三、 鑽石修整器製作方式與機台架設--------------------- 25
3.1 傳統硬焊鑽石修整器製作方式---------------------- 25
3.2 新式組合式鑽石修整器製作方式-------------------- 27
3.3 研磨手臂設計與架設----------------------------- 29
四、 實驗規劃與設備--------------------------------- 32
4.1 實驗規劃-------------------------------------- 32
4.2 實驗材料-------------------------------------- 34
4.3 實驗設備-------------------------------------- 39
4.4 實驗步驟與參數配置------------------------------ 44
4.5 實驗量測方式----------------------------------- 46
五、 實驗結果與討論--------------------------------- 49
5.1 鑽石修整器之分析------------------------------- 50
5.2 鑽石修整器對拋光墊的影響------------------------ 60
5.3 拋光墊對氧化層晶圓移除率的影響------------------- 64
5.4 長時間修整後晶圓移除率與拋光墊移除率的影響-------- 70
5.5 時間修整後鑽石表面的磨耗------------------------- 75
5.6 長時間修整後鑽石修整器對拋光墊表面的影響---------------81
六、 結論及未來展望--------------------------------------89
6.1 結論------------------------------------------ 89
6.2 未來展望--------------------------------------- 90
參考文獻 ----------------------------------------- 91

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