臺灣博碩士論文加值系統

本實驗以氯化亞銅、氯化銦、氯化鎵和硒粉為反應物，十八油胺為溶劑，藉由膠體合成法在氮氣環境下成功製備出CuInSe2、CuInxGa1-xSe2(CIGS)和CuGaSe2奈米粒子，並探討反應物濃度、反應時間和反應溫度對於奈米粒子型態與組成的影響，利用XRD、TEM、UV-VIS-NIR和EDS等工具分析奈米粒子的結晶結構、形狀、粒徑大小、光學性質以及成份組成比例。
本文提出以非真空製程的塗佈方法製備CIGS薄膜吸收層，可簡化CIGS薄膜生產製程及降低設備投資成本，CIGS合金粉體利用濕式球磨方式製得穩定的CIGS奈米溶液，將此溶液直接塗佈在已濺鍍鉬的鈉玻璃基板上製作CIGS薄膜太陽光吸收層，探討在溼式球磨中磨珠用量對於CIGS薄膜均勻度的影響，利用α-step量測CIGS薄膜厚度及均勻度，並且組裝成太陽能電池元件，測得光電轉換效率為0.008 %。

The CuInSe2, CuInxGa1-xSe2(CIGS) and CuGaSe2 nanoparticles were successfully prepared through colloidal method under nitrogen automosphere condition by using copper chlorides, indium chlorides, gallium chlorides, Se powder as precursors, and oleylamine as solvent. We discussed the effects of reactants concentration, reaction time and temperature on the morphology and composition of nanoparticles. Analysis crystal structure, shape, particle size, optical property and composition of nanoparticles by using XRD, TEM, UV-VIS-NIR and EDS.
In this study, a non-vacuum process for coating the CIGS thin film is proposed to simplify the production process and reduce the investment costs. The CIGS alloy powder can be further grinded to a stable CIGS nanoparticles solution by wet-ball-milling method, the solution coating on Soda Lime glass that has been sputtering of molybdenum as CIGS thin film absorbing layer, we discussed the amount of beads in the wet-ball-milling for impact the uniformity of CIGS thin film. The thickness and uniformity of CIGS thin film were measured by using α-step instrument. In practical, the CIGS thin film was assembled into a solar cell, the photoelectric conversion efficiency is about 0.008 %.

中文摘要 I
Abstract II
誌謝 III
目錄 IV
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1.1 前言 1
1.2 太陽能電池的發展及種類 1
1.2.1 結晶矽太陽能電池 3
1.2.2 薄膜太陽能電池 4
1.2.3 染料敏化太陽能電池 5
1.3 研究動機及目的 6
第二章 理論基礎與文獻回顧 7
2.1 太陽能電池原理 7
2.2 CIGS薄膜太陽能電池 9
2.2.1 CIGS薄膜太陽能電池介紹 9
2.2.2 CIGS薄膜非真空製程技術 10
2.2.3 CIS/CIGS材料的基本性質 11
2.3 奈米粒子製備 14
2.3.1水熱法 15
2.3.2溶膠凝膠法 15
2.3.3共沉澱法 16
2.3.4膠體合成法 16
2.3.5 Ⅰ-Ⅲ-Ⅵ族奈米粒子製備 17
2.4 研磨及分散技術介紹 26
2.5 表面粗糙度表示法及定義介紹 30
第三章 藥品儀器設備與實驗方法介紹 32
3.1 化學藥品 32
3.2 儀器設備 33
3.2.1 X-Ray粉末繞射儀(XRD) 33
3.2.2 穿透式電子顯微鏡(TEM) 34
3.2.3掃描式電子顯微鏡(SEM) 35
3.2.4 能量散佈光譜儀(EDS) 35
3.2.5 紫外光-可見光-近紅外光吸收光譜儀(UV-VIS-NIR) 36
3.2.6 膜厚測量儀(α-step) 37
3.3 CuInSe2、Cu(InxGa1-x)Se2、CuGaSe2奈米粒子的製備 38
3.3.1 膠體合成法A 38
3.3.2 膠體合成法B 40
3.4 CIGS奈米溶液漿料的製備 43
3.5 基板的清洗與薄膜的塗佈、乾燥處理 44
3.5.1 玻璃基板的清洗 44
3.5.2 薄膜的塗佈、乾燥處理 44
第四章 結果與討論 47
4.1 膠體合成法A 47
4.2 膠體合成法B 53
4.2.1 CuInSe2的製備反應時間比較 53
4.2.2 CuInSe2的製備反應溫度比較 59
4.2.3 CuInSe2的製備反應物濃度比較 60
4.2.4 CuInXGa1-XSe2的製備 63
4.3 非真空CIGS薄膜塗佈製程分析 69
第五章 結論 76
參考文獻 77
附錄 83

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