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研究生:莊尚勳
研究生(外文):Chuang, Shang-Shiun
論文名稱:以低溫微波活化鍺薄膜摻雜之研究
論文名稱(外文):Study on Dopant Activation in Germanium Film by Low Temperature Microwave Annealing
指導教授:羅正忠羅正忠引用關係
指導教授(外文):Lou, Jen-Chung
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:英文
論文頁數:34
中文關鍵詞:微波低溫
外文關鍵詞:MicrowaveGermaniumLow Temperature
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本論文為利用微波退火製程來活化多晶鍺薄膜中的離子佈植摻雜物,可抑止摻雜物擴散。對於經過離子佈植後產生的非結晶區域,發現薄膜的電阻率高對於微波的吸收率較高。而薄膜的厚度也對於微波的吸收率有影響。我們嘗試以不同的微波強度及時間施加於鍺薄膜,藉由量測其片電阻值進而推算電阻率,觀察其活化的程度。我們發現縮短微波製程的時間可以控制雜質擴散,減少晶圓在高溫的環境。而在晶圓上下加入空白矽晶圓可以降低製程初始的升溫速率,此一作用同樣對於減少雜質擴散及保護晶圓表面有一定的幫助。利用微波退火的低溫活化特性,可防止鍺薄膜中離子佈子摻雜物發生擴散的現象及避免金屬污染,減少製程的步驟。在未來將可應用於元件微縮。
We study on the microwave annealing process to activate boron and phosphorus in single and poly germanium thin film. The amorphous thin film on the wafer was formed by ion implantation. The higher resistivity of the thin film has the better fraction of microwave absorption. And the film thickness also influences the microwave absorption. The wafers go through different microwave power and process time to observe dopant diffusion. We found to decrease the process time, shorten the wafer stay in the near-maximum temperature of the process, can reduce the dopant diffusion. And the addition of filler wafers above and below the wafer can also suppress the dopant diffusion and prevent the damage on the wafer surface.
Chapter 1 Introduction
1-1 General Background ------------------------------------------------------- 1
1-2 Motivation ------------------------------------------------------------------ 2
1-3 Organization of the thesis -------------------------------------------------- 3
Chapter 2 Microwave Annealing Process
2-1 Introduction ----------------------------------------------------------------- 5
2-2 Mechanism of Microwave Annealing ----------------------------------- 5
2-3 Introduction of Microwave System -------------------------------------- 7
Chapter 3 Dopant Activation in Germanium by Microwave Annealing
3-1 Introduction ---------------------------------------------------------------- 12
3-2 Experimental Procedure -------------------------------------------------- 12
3-3 Results and Discussions -------------------------------------------------- 14
3-4 Summary --------------------------------------------------------------------18
Chapter 4 Conclusions and Future work
4-1 Conclusions ---------------------------------------------------------------- 30
4-2 Future Work ---------------------------------------------------------------- 30

References ----------------------------------------------------------------------- 32
Vita ------------------------------------------------------------------------------- 34

[1] C. C. Cheng, C. H. Chien, G. L. Luo, C. L. Lin, H. S. Chen, J. C. Liu, C. C. Kei, C. N. Hsiao, C. Y. Chang, “Junction and device characteristics of gate-last Ge p- and n-MOSFETs with ALD-Al2O3 gate dielectric,” IEEE Trans. Electron Devices 56, 1681, 2009.
[2] T. C. Chen, C. Y. Peng, C. H. Tseng, M. H. Liao, M. H. Chen, C. I. Wu, M. Y. Chern, P. J. Tzeng, C. W. Liu, “Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition,” IEEE Trans. Electron Devices 54, 759, 2007.
[3] C. O. Chui, H. Kim, D. Chi, B. B. Triplett, P. C. McIntyre, and K. C.Saraswat, “A sub-400 C germanium MOSFET technology with high-K dielectric and metal gate, ” IEDM Tech. Dig., pp. 437–440, 2002.
[4] C. O. Choui, K, Gopalakrishnan, P. B. Griffin, J. D. Plummer, K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium, ”Appl. Phys. Lett. vol. 83 no. 16, p. 3275-3277, 2003.
[5] Y. S. Suh, M. S. Carroll, A. Levy, G. Bisognin, D. D. Salvador, M. A. Sahiner, C. A. King, “Implantation and activation of high concentrations of boron in germanium, ”IEEE Trans. Electron Devices, vol. 52, pp. 2416-2421, Nov. 2005.
[6] A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, W. Vandervorst, “Diffusion, activation, and regrowth behavior of high dose P implants in Ge, ”Appl. Phys. Lett., vol. 88, 162118, 2006.
[7] J. H. Park, M. Tada, W. S. Jung, H. S. Wong, K. C. Saraswat, “Metal-induced dopant (boron and phosphorus) activation process in amorphous germanium for monolithic three-dimensional integration, ”J. Appl. Phys., vol. 106, 074510, 2009.
[8] T. L. Alford, D. C. Thompson, J. W. Mayer, N. D. Theodore, “Dopant activation in ion implanted silicon by microwave annealing, ”J. Appl. Phys., vol. 106, 114902, 2009.
[9] H. Bosman, Y. Y. Lau, R. M. Gilgenbach, “Microwave absorption on a thin film, ”Appl. Phys. Lett. vol. 82, p. 1353, 2003.
[10] H. Zohm, E. Kasper, P. Mehringer, G. A. Muller, “Thermal processing of silicon wafers with microwave co-heating, ”Microelectron. Eng., vol. 54, p. 247-253, 2000.

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