臺灣博碩士論文加值系統

在本研究中，我們於不銹鋼基板上製作可撓式有機薄膜電晶體(Organic thin-film transistors)，並量測在不同應力下的元件特性。我們發現當元件受壓應力彎曲時，元件電性變好；反之受張應力彎曲時，電性則變差。我們推測元件受應力的改變主要來自於主動層內分子間作用力的變化：在張應力狀態時，晶粒-晶粒間的間隙擴大而導致位能障變大，使得載子遷移率變小；反之，當元件處於壓應力狀態時，晶粒-晶粒間的間隙縮小，通道電阻下降，載子遷移率因而提升。

In this study, we fabricated flexible organic thin-film transistors on stainless steel substrates, and their electrical characteristic were measured under different bending conditions. We found that the electrical characteristic was increased under compressed strain and decreased under tensile strain. From the analysis of the results, we deduced that the variety of intermolecular force change the device characteristic under bending strain states. mechanical strains influence the barrier height between the grains of pentacene thin-films, thereby resulting in the variation of device characteristic.

第一章 序論 1
1.1前言 1
1.2有機薄膜電晶體與相關元件特性 3
1.2.1金氧半場效電晶體之結構與元件特性 3
1.2.2薄膜電晶體之結構與元件特性 4
1.2.3有機薄膜電晶體發展史 5
1.2.4有機薄膜電晶體製程 7
1.3有機半導體材料簡介 9
1.3.1高分子 10
1.3.2小分子 10
1.3.3五環素（pentacene）材料簡介 11
第二章 動機與原理 12
2.1研究動機 12
2.2文獻探討 13
2.3半導體載子傳輸方式 15
2.4有機材料載子傳輸模型 17
2.4.1　Hopping Model 17
2.4.2　Multiple Trapping and Release Model（MTR） 18
2.5有機薄膜電晶體的操作模式 19
2.6重要名詞解釋 21
2.6.1　ID-VG圖與ID-VD圖 21
2.6.2載子遷移率（mobility；μ） 22
2.6.3臨界電壓（threshold　voltage；Vth） 23
2.6.4電流開關比（on-off　ratio） 23
2.6.5磁滯現象（hysteresis　voltage；△Vth） 24
2.6.6元件電阻（resistance；Rp、Rtotal） 25
第三章 實驗架構 26
3.1實驗流程 26
3.1.1基板製作 26
3.1.2可光圖型化介電層製作 27
3.1.3主動層製作 28
3.1.4源極及汲極電極製作 28
3.1.4元件完成 29
3.2實驗儀器 30
第四章 結果與討論 34
4.1可撓式有機電晶體結構與材料 34
4.1.1可光圖形化介電層材料比較 34
4.1.2可撓式基板製作 37
4.2重複量測下的元件電性表現 39
4.2.1　ID-VG圖 39
4.2.2不同通道長度下的元件電阻變化 40
4.3撓曲狀態下的元件電性表現 42
4.3.1量測方式 42
4.3.2元件電阻分析 42
4.3.3撓曲形變與寄生電阻變化 44
4.3.4載子遷移率及臨界電壓分析 45
4.4不同撓曲半徑下的電性分析 47
4.4.1撓曲應力探討 47
4.4.2電性變化分析 48
4.5撓曲分析及模型 51
4.5.1撓曲狀態下電性變化總結與分析 51
4.5.2撓曲模型 52
4.6撓曲次數與電性表現 53
第五章 結論 55
參考文獻 56

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