|
[1] 李雅明，半導體的故事(新新聞，新竹，1999).
[2] 李世鴻，半導體工程原理(全威圖書，台北，2002).
[3] C. Jagadish and S. Pearton, Zinc Oxide Bulk, Thin
Films and Nanostructures (Elsevier, Oxford, 2006).
[4] K. Takahashi, A. Yoshikawa, and A. Sandhu, Wide
Bandgap Semiconductors(Springer, Heidelberg, 2007).
[5] Y. J. Lin, C. L. Tsai, C. J. Liu, L. Horng, Y. T.
Shih, M. S. Wang, C. S. Jhang, and C. S.
Huang, “Ferromagnetism study of Co0.2MgxZn0.8-xO
films prepared by the sol-gel method,” J. Sol-Gel
Sci. Technol. 52, 109 (2009).
[6] Y. J. Lin, S. S. Chang, H. C. Chang, and Y. C.
Liu, “High-barrier rectifying contacts on undoped ZnO
films with (NH4)2Sx treatment owing to Fermi-level
pinning,” J. Phys. D: Appl. Phys. 42,075308 (2009).
[7] C. L. Tsai, Y. J. Lin, Y. M. Chin, W. R. Liu, W. F.
Hsieh, C. H. Hsu, and J. A. Chu, “Low-resistance
nonalloyed ohmic contacts on undoped ZnO films grown
by pulsed-laser deposition ,” J. Phys. D: Appl. Phys.
42, 095108 (2009).
[8] S. B. Zhang, S. H. Wei, and Alex Zunger, “Intrinsic n
-type versus p-type doping asymmetry and the defect
physics of ZnO,” Phys. Rev. B 63, 075205 (2001).
[9] C. H. Park, S. B. Zhang, and S. H. Wei, “Origin of p
-type doping difficulty in ZnO: The impurity
perspective,” Phys. Rev. B 66, 073202 (2002).
[10] Y. J. Zeng, Z. Z. Ye, J. G. Lu, W. Z. Xu, L. P. Zhu,
B. H. Zhao, and S. Limpijumnong, “Identification of
acceptor states in Li-doped p-type ZnO thin films,”
Appl. Phys. Lett. 89, 042106 (2006).
[11]J. G. Lu, Y. Z. Zhang, Z. Z. Ye, Y. J. Zeng, H. P. He,
L. P. Zhu, J. Y.Huang, L. Wang, J. Yuan, B. H. Zhao,
and X. H. Li, “Control of p- and n-type conductivities
in Li-doped ZnO thin films,” Appl. Phys. Lett. 89,
112113 (2006).
[12]陳秀連，以化學法製備均一粒徑氧化鋅粉體與發光特性之研究 (國立台灣
科技大學材料科技研究所，台北，2002).
[13]T. Sekiguchi, N. Ohashi, and
Y.Terada, “Cathodoluminescence study on the
hydrogenation of ZnO luminescence,” Jpn. J. Phys, 36,
289 (1997).
[14]X. Wei, B. Man, C. Xue, C. Chen, and M. Liu, “Blue
luminescent center and ultraviolet-emission dependence
of ZnO films prepared by pulsed laser deposition,”
Jpn. J. Appl. Phys. 45, 8586 (2006).
[15]Y. J. Lin and C. L. Tsai, “Changes in surface band
bending, surface work function, and sheet resistance of
undoped ZnO films due to (NH4)2Sx treatment,” J. Appl.
Phys. 100, 113721 (2006).
[16]Y. W. Heo, D. P. Norton, and S. J. Pearton, “Origin of
green luminescence in ZnO thin film grown by molecular-
beam epitaxy,” J. Appl. Phys. 98, 073502 (2005).
[17]A. Carvalho, A. Alkauskas, A. Pasquarello, A. K.
Tagantsev, and N. Setter, “Li-related defects in ZnO:
Hybrid functional calculations,” Physica B, 404, 23
(2009).
[18]Y. J. Lin, P. H. Wu, C. L. Tsai, C. J. Liu, C. T. Lee,
H. C. Chang, Z. R. Lin, and K. Y. Jeng, “Mechanisms of
enhancing band-edge luminescence of Zn1-xMgxO prepared
by the sol-gel method,” J. Phys. D: Appl. Phys. 41,
125103 (2008).
[19]汪建民，材料分析(中國材料科學學會，新竹，1998).
[20]K. H. Kim, K. C. Park, and D. Y. Ma, “Structural,
electrical and optical properties of aluminum doped
zinc oxide films prepared by radio frequency magnetron
sputtering,” J. Appl. Phys. 81, 7764 (1997).
[21]C. L. Tsai, Y. J. Lin, C. J. Liu, L. Horng, Y. T. Shih,
M. S. Wang, C. S. Huang, C. S. Jhang, Y. H. Chen, and
H. C. Chang, “Structural, electrical, optical and
magnetic properties of Co0.2AlxZn0.8-xO films,” Appl.
Surf. Sci. 255, 8643 (2009).
[22]M. Joseph, H. Tabata, and T. Kawai, “Ferroelectric
behavior of Li-doped ZnO thin films on Si(100) by
pulsed laser deposition,” Appl. Phys. Lett. 74, 2534
(1999).
[23]X. Y. Zhou, S. H. Ge, D. S. Yao, Y. L. Zuo, and Y. H.
Xiao, “Ferromagnetism of MnxLiyZn1-x-yO films,” Appl.
Surf. Sci. 254, 6428 (2008).
[24]G. Srinivasan, R. T. R. Kumar, and J. Kumar, “Li doped
and undoped ZnO nanocrystalline thin films: A
comparative study of structural and optical
properties,” J. Sol-Gel Sci. Technol. 43, 171 (2007).
[25]H. K. Yadav, K. Sreenivas, and V. Gupta, “Influence of
postdeposition annealing on the structural and optical
properties of cosputtered Mn doped ZnO thin films,” J.
Appl. Phys. 99, 083507 (2006).
[26]S. Maniv, W. D. Westwood, and E. Colombini, Pressure
and angle of incidence effects in reactive planar
magnetron sputtered ZnO layers,” J. Vac. Sci. Technol.
20, 162 (1982).
[27]P.K. Nayak, J. Jang, C. Lee, Y. Hong, “Effects of Li
doping on the performance and environmental stability
of solution processed ZnO thin film transistors,”
Appl. Phys. Lett. 95, 193503 (2009).
[28]D. Bao, H. Gu, and A. Kuang, “Sol-gel-derived c-axis
oriented ZnO thin films The Solid Films,” 312, 78
(1998).
[29]S. Amirhaghi, V. Craciun, D. Craciun, J. Elder, and I.
W. Boyd, “Low temperature growth of highly transparent
c-axis oriented ZnO thin films by pulsed laser
deposition Microelectron,” Eng. 25, 321 (1994).
[30]A. Y. Oral, Z. B. Bahsi, and M. H.
Aslan, “Microstructure and optical properties of
nanocrystalline ZnO and ZnO:(Li or Al) thin films,”
Appl. Surf. Sci. 253,4539 (2007).
[31]Y. G. Wang, S. P. Lau, H.W. Lee, S. F. Yu, B. K. Tay,
X. H. Zhang, K. Y. Tse, and H. H. Hng, “Comprehensive
study of ZnO films prepared by filtered cathodic vacuum
arc at room temperature,” J. Appl. Phys. 94, 1597
(2003).
[32]J. C. Nie, J. Y. Yang, Y. Piao, H. Li, Y. Sun, Q. M.
Xue, C. M. Xiong, R. F. Dou, and Q. Y. Tu, “Quantum
confinement effect in ZnO thin films grown by pulsed
laser deposition,” Appl. Phys. Lett. 93, 173104 (2008).
[33]X. H. Pan, W. Guo, Z. Z. Ye, B. Liu, Y. Che, H. P. He,
and X. Q. Pand, “Optical properties of antimony-doped
p-type ZnO films fabricated by pulsed laser
deposition,” J. Appl. Phys. 105, 113516 (2009).
[34]T. Monteiro, A. J. Neves, M. C. Carmo, M. J. Soares, M.
Peres, J. Wang, E. Alves, E. Rita, and U. Wahl, “Near-
band-edge slow luminescence in nominally undoped bulk
ZnO,” J. Appl. Phys. 98, 013502 (2005).
[35]Ü. Özgür, I. Ya. Alivov, C. Liu, A. Teke, M. A.
Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H.
Morkoç, “A comprehensive review of ZnO materials and
devices,” J. Appl. Phys. 98, 041301 (2005).
[36]M. X. Qiu, Z. Z. Ye, H. P. He, Y. Z. Zhang, X. Q. Gu,
L. P. Zhu, and
B. H. Zhao, “Effect of Mg content on structural,
electrical, and optical properties of Li-doped Zn1-
xMgxO thin films,” Appl. Phys. Lett. 90, 182116 (2007).
[37]Y. J. Zeng, Z. Z. Ye, W. Z. Xu, d. y. Li, J. G. Lu, L.
P. Zhu, and B. H. Zhao, “Dopant source choice for
formation of p -type ZnO: Li acceptor,” Appl. Phys.
Lett. 88, 062107 (2006).
[38]A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de
Walle, “First-principles study of native point defects
in ZnO,” Phys. Rev. B 61, 15019 (2000).
[39]D. C. Look, “Recent advances in ZnO materials and
devices,” Mater. Sci. Eng. B 80, 383 (2001).
[40]X. Y. Duan, R. H. Yao, and Y. J. Zhao, “The mechanism
of Li, N dual-acceptor co-doped p-type ZnO,” Appl.
Phys. A: Mater. Sci. Processing. 91, 467 (2008).
[41]Y. J. Lin, C. L. Tsai, Y. M. Lu, and C. J.
Liu, “Optical and electrical properties of undoped ZnO
films,” J. Appl. Phys. 99, 093501 (2006).
[42]B. Wang, J. Min, Y. Zhao, W. Sang, and C. Wang, “The
grain boundary related p -type conductivity in ZnO
films prepared by ultrasonic spray pyrolysis,” Appl.
Phys. Lett. 94, 192101 (2009).
[43]M. Caglar, Y. Caglar, S. Aksoy, and S.
Ilican, “Temperature dependence of the optical band
gap and electrical conductivity of sol-gel derived
undoped and Li-doped ZnO films,” Appl. Surf. Sci. 256,
4966 (2010).
[44]S. Fujihara, C. Sasaki, and T. Kimura, “Effects of Li
and Mg doping on microstructure and properties of sol-
gel ZnO thin films,” J. Eur. Ceram. Soc. 21, 2109
(2001).
[45]B. Z. Dong, H. Hu, G. J. Fang, X. Z. Zhao, D. Y. Zheng,
and Y. P. Sun, “Comprehensive investigation of
structural, electrical, and optical properties for
ZnO:Al films deposited at different substrate
temperature and oxygen ambient,” J. Appl. Phys. 103,
073711 (2008).
|