球柵陣列封裝(Ball Grid Array, BGA)產品的可靠度，是影響電子產品壽命的主要因素之一，有許多文獻探討球柵陣列封裝因溫度而產生疲勞破壞。為了得知球柵陣列封裝的壽命，許多加速測試模型被建立與研究。本文為了證實加速測試模型中的加速因子，會因為晶片封裝設計的參數與封裝型式的不同而有不同的影響，因此針對其：晶片封裝體的錫球大小(Sphere size)、錫球間距(Ball pitch)、封裝體大小(Package size)、晶片厚度(Die size)等，設計參數對可靠度加速因子的影響研究。
用於本文研究的數據分析之封裝種類有：MAPPBGA、CBGA、FCBGA、LGA等，並以原始之Norris-Landzberg[1]加速壽命模型，經由溫度循環失效測試數據，引進兩個與溫度循環有關的參數；頻率(frequency)與最大溫度(Tmax)獲得加速因子AF(Accelerated Factor)。再由熱阻公式[牛頓冷卻定律]關係中的熱導率(Thermal conductivity)與加速模型及加速因子之間關係，探討影響各種設計參數對加速因子影響的結果。
本文證明，在相同的封裝面積(Package size)條件下，焊錫材料為(Sn/Ag/Cu)時，加速因子AF(Acceleration Factor)較大；由加速因子與熱阻關係研究之下，獲到封裝體材料的熱導率值(W/mK)是介於空氣(Air 0.024)與玻璃纖維銅箔板(FR4 0.3)之間；並由加速因子關係式得知，對於晶片封裝面積而言，熱導率與熱阻值(Thermal resistance)呈反比的趨勢。最後並引用文獻[2][3]，論證熱阻對球柵陣列封裝設計參數的影響與關係。

The reliability of BGA (Ball Grid Array) products is one of the critical factors, which influence the lifetime of electronic products, and there are many literatures probing into the failure causes by temperature fatigue. To foresee the lifetime of BGA, various acceleration models were established and studied in succession. In this study our purpose is to prove that the acceleration factors in this model will be relevant to the parameters of chip design and package type. Thus we focus on the parameters such as Sphere size, Ball pitch, Package size and Die size and so on, which apparently affect the acceleration models.
There are different package types applied to this analysis, for example, MAPPBGA, CBGA, FCBGA and LGA, etc. Based upon original Norris-Landzberg[1] formula, we also introduce 2 parameters into this study, frequency and maximum temperature Tmax via the data of temperature cycle failure test to acquire the AF(Acceleration factor) data. Furthermore, from [Newton’s law of cooling], we try to find the correlation among thermal conductivity, acceleration models and acceleration factors, and the effects of each shape parameter on acceleration factors.
Our study demonstrates that the acceleration model made of SAC (Sn/Ag/Cu) solder material under the same package size has the larger acceleration factor than that of the other material. The thermal conductivity value of package is between air (value 0.024) and fiber board (FR4) (value 0.3). As regards package size, thermal conductivity is inversely proportional to thermal resistance trend. Finally, technical literatures [2][3] are quoted to describe the relationships between AF and thermal resistance to package size and die size in detail.

目 錄
第一章 緒論 1
1-1研究背景及動機 1
1-2研究目的 3
1-3論文架構 4

第二章 球柵陣列封裝簡介 6
2-1 MAPPBGA封裝 7
2-2 CBGA封裝 9
2-3 FCBGA封裝 11
2-4 LGA封裝 13

第三章 理論與文獻回顧 15
3-1 加速壽命測試 16
3-2 溫度相關之可靠度加速壽命模型 18
3-3 封裝參數對可靠度加速因子的影響 24

第四章 實驗數據分析 34
4-1 溫度循環試驗樣本、設計參數及試驗條件 35
4-2 實驗數據分析 37
4-3分析結果 39

第五章 結論與未來展望 51
5-1結論 52
5-2未來展望 53
參考文獻 54

表 目 錄
表3-1 銲錫材料說明 26
表4-1各封裝體溫度循環條件一覽表 36
表4-2 196 MAP實驗數據 37
表4-3 144 MAP實驗數據 37
表4-4 179 MAP實驗數據 38
表4-5 MAP系列原始實驗數據 39
表4-6 BGA系列原始實驗數據 40
表4-7 加速因子與晶片尺寸關係表 41
表4-8 加速因子與焊錫材料關係表 42
表4-9 MAP加速因子數據與熱阻關係 43
表4-10 BGA加速因子數據與熱阻關係 44
表4-11材料特性的熱導率值 45
表4-12 Package Size與熱阻比較表 47
表4-13 封裝面積與熱阻關係表 49

圖 目 錄
圖2-1 MAPPBGA封裝示意圖 8
圖2-2 BGA I/O接點方式示意圖 8
圖2-3 MAPPBGA溫度影響翹曲示意圖 8
圖2-4晶片朝上球柵陣列封裝[8] 10
圖2-5單一階式凹槽朝下球柵陣列封裝[8] 10
圖2-6多階式凹槽朝下球柵陣列封裝[8] 10
圖2-7覆晶式球柵陣列封裝示意圖[8] 12
圖2-8 LGA接點柵格陣列上/下層圖[9] 14
圖2-9 LGA Design Rule示意圖[9] 14
圖3-1 BGA封裝熱傳示意圖 31
圖4-1晶片尺寸與加速因子趨勢圖 41
圖4-2 焊錫材料與與加速因子趨勢圖 42
圖4-3 MAP與BGA封裝系列材料熱導率趨勢圖 46
圖4-5 封裝尺寸與熱阻影響趨勢圖 47
圖4-6封裝與熱阻影響於不同晶片大小[19] 48
圖4-7封裝面積之熱導率與熱阻關係圖 50
圖4-8封裝面積之熱導率與熱阻關係圖 50

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