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研究生:蘇子熙
研究生(外文):Tzu-Hsi Su
論文名稱:紫外線輔助雷射蒸鍍製備氧化鋅鋁薄膜之特性研究
論文名稱(外文):Characteristics of ZnO:Al Thin Film by UV-assisted Pulsed Laser Deposition
指導教授:余昌峰余昌峰引用關係
指導教授(外文):Chang-Feng Yu
學位類別:碩士
校院名稱:國立嘉義大學
系所名稱:光電暨固態電子研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
論文頁數:79
中文關鍵詞:脈衝雷射鍍膜氧化鋅鋁紫外線異質接面
外文關鍵詞:PLDAZOUVPLDheterojunction
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本實驗利用傳統雷射蒸鍍(PLD)及紫外線輔助雷射蒸鍍法(UVPLD)在玻璃基板上製備AZO(Aluminum doped Zinc Oxide, ZnO:Al)及AZO:N薄膜,並利用X光光電子能譜儀(X-ray Photoelectron Spectroscopy, XPS),X光繞射分析儀(X-Ray Diffractometer, XRD),原子力顯微鏡(Atomic Force Microscopy, AFM),四點探針(Four-point probe),霍爾效應量測系統(Hall effect measurement system),導電性原子力顯微鏡(Conducting Atomic Force Microscopy, CAFM),紫外光-可見光分光光譜儀(UV-VIS spectrophotometer)和橢圓偏光儀(Ellipsometer),來作薄膜特性分析。在相同的條件下,比較PLD與UVPLD,發現在UVPLD下製備出的薄膜有較好的結構及光電特性。
由XRD的結果指出AZO及AZO:N薄膜為六方最密堆積結構,而且沿c軸(002)的優先取向,也可看出UVPLD所製備出的薄膜相對於PLD有較好的品質。使用UVPLD製程可使AZO薄膜表面較為平坦。UVPLD製備出的AZO薄膜相對於PLD擁有較低的電阻率1.67x10-3Ω-cm。所有的薄膜在可見光範圍內皆有80%以上的穿透率。而使用UVPLD所製備的薄膜其光學能隙皆會紅移。
使用UVPLD及PLD在p-type(100)矽基板上鍍上AZO及AZO:N組成AZO/p-Si 或 AZO:N/p-Si的異質結構p-n二極體,並對該結構進行I-V和C-V特性分析。由I-V曲線,我們可以估算出切入電壓的值。而異質接面的能障高度VD可利用C-2-V圖在V軸的切線估算出。由實驗結果可看出,當光學能隙越大,異質接面的能障高度VD就越大。而VD越大則讓切入電壓變大。使用UVPLD所製備出的AZO:N薄膜有最低的光學能隙、能障高度及切入電壓,分別為3.395eV、0.45V及1.57V。

AZO(Aluminum doped Zinc Oxide, ZnO:Al) and AZO:N thin films grown by conventional and ultraviolet-assisted pulsed laser deposition technique(PLD and UVPLD) on glass substrates were analyzed by XPS, XRD, AFM, four-point probe, Hall effect, CAFM, UV-VIS and elliposmeter. With respect to film grown by conventional PLD under similar conditions but without UV illumination, the UVPLD grown film exhibited better structural, optical, and electrical properties.
The studies of XRD indicated that AZO and AZO:N thin films were hexagonal wurtzite type structure with strong (002) c-axis orientation. That also can see the highly textured film can be grown much better by UVPLD than by conventional PLD. The AZO thin films surface morphology is flatten by using UVPLD. The AZO thin films grown by UVPLD exhibited lower resistivity value of 1.67x10-3Ω-cm than by conventional PLD. All thin films show over 80% optical transmission in the visible range. The optical band gap of thin films by using UVPLD shows red-shift.
AZO and AZO:N films were prepared by PLD and UVPLD on p-type (100) Si substrates to fabricate AZO/p-Si or AZO:N/p-Si heterojunction. The electrical transport properties of the heterojunction were investigated by current-voltage(I-V) measurement and capacitance-voltage(C-V) measurement. From the I-V curve, we can estimate the cut-in voltage. The AZO/p-Si and AZO:N/p-Si heterojunction can fit with typical C-2-V relationship. The relationship between C-2 and V is straight line and the barrier high VD could found from the intercept of figure. From the result, when the optical band gap increases the VD increases. When the VD increases, the cut-in voltage increases. The AZO:N thin films grown by UVPLD can get the lowest optical energy band gap(3.395eV), potential barrier height(0.45V) and cut-in voltage(1.57V).

摘要 I
Abstract III
誌謝 V
目錄 VI
圖目錄 X
表目錄 XIII
第一章 緒論 1
1.1前言 1
1.2研究動機 3
第二章 理論基礎與文獻回顧 4
2.1脈衝雷射蒸鍍系統(Pulsed Laser Deposition, PLD) 4
2.1.1雷射歷史及特性 4
2.1.2脈衝雷射蒸鍍歷史 5
2.1.3脈衝雷射蒸鍍機制 6
2.2薄膜沈積機制 7
2.3氧化鋅鋁薄膜 8
2.3.1氧化鋅薄膜簡介 8
2.3.2氧化鋅鋁薄膜之晶體結構 9
2.3.3氧化鋅鋁薄膜之導電性質 10
2.3.4氧化鋅鋁薄膜之光學性質 12
2.4半導體pN異質結構特性 13
2.4.1電流-電壓(I-V)特性 13
2.4.2電容-電壓(C-V)特性 15
第三章 實驗方法與理論分析 17
3.1實驗與分析流程 17
3.2實驗方法與脈衝雷射蒸鍍系統 18
3.2.1製作靶材 18
3.2.2基板清洗 21
3.2.3脈衝雷射蒸鍍步驟 22
3.3量測設備與基礎理論 25
3.3.1X光光電子能譜儀(X-ray photoelectron spectroscopy, XPS) 25
3.3.2X光繞射分析儀(X-Ray Diffractometer, XRD) 27
3.3.3原子力顯微鏡(Atomic Force Microscopy, AFM) 29
3.3.4導電性原子力顯微鏡(Conducting Atomic Force Microscopy, CAFM) 33
3.3.5霍爾效應量測系統(Hall effect measurement system) 34
3.3.6四點探針(Four-point probe) 37
3.3.7紫外光-可見光分光光譜儀(UV-VIS spectrophotometer) 38
3.3.8橢圓偏光儀(Ellipsometer) 40
3.3.9電流-電壓特性(I-V Curve) 42
3.3.10電容-電壓特性(C-V Curve) 42
第四章 結果與討論 43
4.1製程方法對薄膜的影響 43
4.1.1成份分析 43
4.1.2晶體結構分析 48
4.1.3 AFM表面型態分析 51
4.1.4 CAFM表面電性分析 53
4.1.5霍爾效應分析 55
4.1.6穿透光譜分析 57
4.1.7異質接面電特性分析 59
4.2紫外線強度對薄膜的影響 62
4.2.1晶體結構分析 62
4.2.2AFM表面型態分析 64
4.2.3CAFM表面電性分析 66
4.2.4霍爾效應分析 67
4.2.5穿透光譜分析 69
第五章 結論 71
5.1製程方法對薄膜的影響 71
5.2紫外線強度對薄膜的影響 74
參考文獻 76


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