臺灣博碩士論文加值系統

本論文的研究目的為研製In0.75Ga0.25As量子點雷射，並分析雷射
元件的光學特性，藉此能夠應用至光纖通訊系統上。
在雷射材料方面，我們使用分子束磊晶(MBE)機台以S-K mode
成長12層In0.75Ga0.25As量子點結構在GaAs基板上，其中包含被覆層材
料為Al0.5Ga0.5As(C433)、Al0.25Ga0.75As(C486)以及Al0.2Ga0.8As(C485)之
三種結構，發光波長約為1.3μm。
在波導設計方面，則設計2.2μm寬度之脊狀波導，目的是為了讓
光在波導上傳輸為單模態，使得具有較小的色散損失。再利用脊狀波
導以及劈裂鏡面作為共振腔來產生Fabry-Perot雷射。
在量子點雷射量測方面，C485在共振腔長為3000μm的Threshold
current為80mA，發光功率41.88mW/A，主要發光Peak在1201nm，第
二個Peak在1197nm，第三個Peak在1182nm；然而C486共振腔長為
3300μm的Threshold current為120mA，發光功率為27.44mW/A，主要
發光Peak在1215nm，第二個Peak在1205nm。C485的臨界電流密度為
1212 A/cm2，C486的臨界電流密度為1454 A/cm2。

The purpose of this thesis is to fabricate the In0.75Ga0.25As quantum
dot (QD) lasers, and analyze the optical properties of laser devices to be
applied to optical fiber communication systems.
In laser materials, we grew 12-layer In0.75Ga0.25As QD strcutures by
molecular-beam epitaxy (MBE) with S-K mode on GaAs substrate, which
contains the cladding layer material Al0.5Ga0.5As (C433) Al0.25Ga0.75As
(C486) and Al0.2Ga0.8As (C485) of the three structures, the emission
wavelength of about 1.3μm.
In the waveguide design, the design of 2.2μm ridge width waveguide,
the purpose is to enable the single transmission mode in the waveguide,
so that smaller dispersion losses. Using ridge waveguide and cleaved
mirror as the formation of Fabry-Perot cavity laser.
In the quantum dot laser characteristic, C485 in the cavity length is
3000μm of threshold current is 80mA with a slope efficiency of
41.88mW/A, the main emission Peak at 1201nm, the second Peak at
1197nm, the third Peak at 1182nm ; however C486 cavity length is
3300μm of threshold current is 120mA with a slope efficiency of
27.44mW/A, the main emission Peak at 1215nm, the second Peak at
1205nm. C485 of the threshold current density is 1212 A/cm2, C486 of
the threshold current density is 1454 A/cm2.

第一章 簡介…………………………………………………………1
1-1 前言…………………………………………………………1
1-2 量子點雷射…………………………………………………………2
1-3 論文架構…………………………………………………………4
第二章 量子點雷射理論與模擬…………………………………………………………5
2-1 雷射原理…………………………………………………………5
2-1-1自發放射及受激放射…………………………………………………………6
2-1-2 居量反轉…………………………………………………………7
2-1-3 閥值增益與光侷限因子…………………………………………………………9
2-1-4 溫度效應…………………………………………………………11
2-2 雷射材料的選擇…………………………………………………………12
2-3 雷射結構模擬…………………………………………………………14
第三章 元件製程步驟…………………………………………………………17
3-1 磊晶片資料…………………………………………………………17
3-2 製程示意圖-乾蝕刻技術製作脊狀波導…………………………………………………………21
3-3 乾蝕刻製程步驟…………………………………………………………28
3-4 製程示意圖-濕蝕刻技術製作脊狀波導…………………………………………………………36
3-5 濕蝕刻製程步驟…………………………………………………………42
第四章 量測方法與結果…………………………………………………………45
4-1 量測系統介紹及驗證…………………………………………………………45
4-2 耦合機制…………………………………………………………47
4-3 Fabry-Perot resonance method 量測介紹…………………………………………………………48
4-3-1 Fabry-Perot 干涉現象…………………………………………………………48
4-3-2Fabry-Perot resonance 損耗量測…………………………………………………………49
4-4 L-I 量測系統介紹…………………………………………………………50
4-5 量子點雷射量測結果…………………………………………………………51
4-5-1 乾式蝕刻製程元件之量測結果…………………………………………………………51
4-5-2 濕式蝕刻製程元件之量測結果…………………………………………………………55
第五章 結論…………………………………………………………63
第六章 參考文獻…………………………………………………………64

[1] G. P. Agrawal, and N. K. Dutta, “Semiconductor Lasers”, Van
Nostrand Reinhold, 1993.
[2] L. A. Coldren, and S. W. Corzine, “Diode Lasers and Photonic
Integrated Circuits”, Wiley, 1995.
[3] P. S. Zory, and Jr., “Quantum Well Lasers”, Academic Press, 1993.
[4] D. Bimberg, M. Grundmann, N. N. Ledentsov, “Quantum Dot
Heterostructures”, Wiley, 1999.
[5]Kirstaedter.N., N.N.Ledentsov, M.Grundmann, D.Bimberg,
V.M.Ustinov, S.S.Ruvimov, M.V.Maximov, P.S.Kop’ev, Zh.I.Alferov,
U.Richter, P.Werner, U.Gosele,and J.Heydenreich , Electron. Lett.,
vol.30, pp.1416, 1994.
[6] M. Asada, Y. Miyamota, and Y. Suematsu, “Gain and the threshold of
three-dimensional quantum-box lasers,” IEEE J. Quantum Electron., vol.
QE-22, pp.1915-1921, 1986.
[7] O.G. Schmide, N.Kirstaedter, N.N. Ledentsov, M.H. Mao, D.
Bimberg, V.M. Ustinov, A.E. Egorov, A.E. Zhukov, M.V. Masimov, P.S.
Kop’ev, and Zh.I. Alferov, “Prevention of gain saturation by multi-layer
65
quantum dot lasers ” Electron. Lett., vol.32, pp.1302-1304, 1996.
[8]A. Salhi, L. Fortunato, L. Martiradonna, R. Cingolani, M. De Vittorio,
and A.Passaseo,“Enhanced modal gain of multilayer InAs/InGaAs/GaAs
quantum dot lasers emitting at 1300 nm” J. Appl. Phys. 100, 123111 ,
2006.
[9]Quantum dot lasers/Ustinov, Victor M.(Victor Mikhailovich).
[10]A. Martinez, A. Lemaitre, K. Mergherm, L. Feriazzo, C. Dupuis,
and A. Ramdane.“Static and dynamic measurements of the α-factor of
five-quantum-dot-layer single-mode lasers emitting at 1.3mm on GaAs”
Appl. Phys. Lett. 86, 211115 (2005).
[11]E. A. Viktorov, and P. Mandel .“Electron-hole asymmetry and
two-state lasing In quantum dot lasers”Appl. Phys. Lett. 87, 053113
(2005).
[12]B. J. Stevens, D. T. D. Childs, H. Shahid,and R. A. Hogg,“Direct
modulation of excited state quantum dot lasers ”Appl. Phys. Lett. 95,
061101 (2009).
[13]盧廷昌 王興宗 著,“半導體雷射導論”五南圖書,2008年。
66
[14]周勝國,”光波導反射器與半導體雷射之設計與研製”, 國立中山大
學光電所, 2006年6月。
[15]林信宏, ”半導體光放大器、Fabry-perot雷射及環形共振腔濾波器
之研究暨量測”, 國立中山大學光電所, 2007年6月。