臺灣博碩士論文加值系統

本實驗研究中，我們以化學氣相沉積法(chemical vapor deposition, CVD)在鎵酸鋰 (lithium gallate, LiGaO2 , LGO)基板上成長非極性氮化鎵(GaN, gallium nitride)薄膜。以金屬鎵(metallic gallium)及氨氣(NH3)分別作為Ga及N的來源。實驗分成兩組：一組在氨氣(NH3)氣氛下升溫，改變反應壓力做為實驗條件；另一組則在氮氣(N2)氣氛下升溫完後，再通入氨氣反應，改變反應溫度做為實驗條件。
反應後的試片再以X光繞射(X-ray diffraction)、掃描式電子顯微鏡(scanning electron microscope)、電子背向散射繞射(electron back-scattered diffraction)、原子力顯微鏡(atomic force microscope)、光激發光譜(photoluminescence spectroscopy)和穿透式電子顯微鏡(transmission electron microscopy)來分析對成長之樣品進行晶體生長方向、表面形貌、薄膜粗糙度、光學性質和微觀結構的表現，來觀察GaN的成長情形。
　實驗發現在氨氣氣氛下升溫，反應溫度為950°C、NH3氣體流量為450sccm、反應時間為60分鐘的條件下，改變生長壓力(50 torr ~ 400 torr)都可以獲得m-plane的氮化鎵。而另一組氮氣氣氛下升溫，反應壓力為50 torr、N2/NH3氣體流量為450/30sccm、反應時間為60分鐘的條件下，改變生長溫度(900°C ~ 1000°C)可以獲得m-plane的氮化鎵薄膜。另外，固定反應溫度在1000°C，所生長出的薄膜為pure m-plane的氮化鎵，但薄膜有嚴重剝落的情況。
　值得注意的是，在氨氣氣氛下升溫反應後，LGO基板內部出現坑坑洞洞的樣貌，與原本LGO基板的樣貌差異頗大；而氮氣氣氛下升溫，反應後LGO基板坑洞的情況大為改善。

The study aims at growing nonpolar GaN film on LiGaO2 substrate by chemical vapor deposition (CVD). Metallic gallium and NH3 are the sources of Ga and N. There are two sets of experiment: add NH3 when raising the temperature, and set different reacting pressure at each experiment; add N2 when raising the temperature, and set different reacting temperature at each experiment, while reach the reacting temperature add NH3.
Analyze the reacted samples with X-ray diffraction, scanning electron microscope, electron back-scattered diffraction, atomic force microscope and transmission electron microscopy to know the growing direction, morphology, roughness, optical property, and the microstructure of GaN growing situation.
Under the experimental conditions, add NH3 when raising the temperature and set the reacting pressure in the range of 50 torr ~ 400 torr at 950°C with NH3 flow rate 450sccm for 60 minutes, m-plane GaN can be obtained; setting different reacting temperature(900°C ~ 1000°C) at 50 torr with N2/NH3 flow rate 450/30sccm for 60 minutes can also get m-plane GaN. Besides, the thin film of pure m-plane GaN can be obtained when setting the reacting temperature at 1000°C, but the film peels off seriously.
After reacting under the conditions of the first set experiments, the inside LGO substrate become damaged, pores can be observed easily; and the circumstances of LGO is better in second set experiment.

摘要.............................................................................................................I
Abstract.....................................................................................................III
表 目錄...................................................................................................VII
圖 目錄.................................................................................................VIII
第一章 序論........................................................................................... 1
　1-1前言..................................................................................................1
　1-2文獻回顧..........................................................................................2
第二章 理論基礎....................................................................................4
　2-1 GaN的結構與性質..........................................................................4
　2-2 LiGaO2的結構與性質.....................................................................5
　2-3研究動機..........................................................................................7
第三章 實驗方法與步驟……..............................................................11
　3-1 實驗方法與步驟...........................................................................11
　 3-1-1 基板清洗 ................................................................................11
　 3-1-2 CVD生長..................................................................................11
　3-2 實驗裝置.......................................................................................12
　 3-2-1 反應氣體輸送裝置.................................................................12
　 3-2-2 高溫反應爐.............................................................................13
　 3-2-3 真空及排氣裝置.....................................................................13
　3-3 實驗生長參數...............................................................................13
　3-4 量測系統簡介...............................................................................16
　 3-4-1 X光繞射分析儀(X-ray diffraction, XRD) ..............................16
　 3-4-2 掃描式電子顯微鏡(Scanning Electron Microscope, SEM) ..17
　 3-4-3光激發光譜(Photoluminescence spectroscopy, PL)….............18
3-4-4 原子力顯微鏡(Atomic Force Microscope, AFM) .................18
3-4-5 解析型掃描穿透式電子顯微鏡(Transmission Electron
Microscopy, TEM)….............................................................19
第四章 結果與討論..............................................................................20
　4-1 氨氣(NH3)氣氛下升溫，成長溫度對(10-10)GaN的影響...........20
　 4-1-1 X光繞射(XRD)分析................................................................21
4-1-2 掃描式電子顯微鏡(SEM)分析...............................................22
4-1-3 電子背向散射繞射(EBSD)分析….........................................23
4-1-4 穿透式電子顯微鏡(TEM)分析...............................................27
4-2 氮氣(N2)氣氛下升溫，成長溫度對(10-10)GaN的影響..............29
　 4-2-1 X光繞射(XRD)分析................................................................29
　 4-2-2 掃描式電子顯微鏡(SEM)分析...............................................31
　 4-2-3 原子力顯微鏡(AFM)分析......................................................32
4-2-4 光激發光譜(PL)分析..............................................................33
4-2-5 穿透式電子顯微鏡(TEM)分析..............................................34
第五章 結論............................................................................................37
參考文獻..................................................................................................39
附錄..........................................................................................................41

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