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研究生:何昱暘
研究生(外文):Yu-yang Ho
論文名稱:CuInSe2薄膜快速硒化製程之改良研究
論文名稱(外文):An improvement in the selenization process of CuInSe2
指導教授:曾百亨曾百亨引用關係
指導教授(外文):Bae-Heng Tseng
學位類別:碩士
校院名稱:國立中山大學
系所名稱:材料與光電科學學系研究所
學門:工程學門
學類:材料工程學類
論文種類:學術論文
論文出版年:2010
畢業學年度:98
語文別:中文
論文頁數:92
中文關鍵詞:表面形貌成分均勻性快速硒化
外文關鍵詞:RTA selenzation processroughness of the CIS surfacecomposition test
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利用加入Al隔層的方式隔絕Cu、In元素,但是Al與空氣接觸會形成Al的氧化物,所以利用In覆蓋層使Al盡量不與空氣接觸減少實驗誤差;且加入Al隔層,可使CIS前驅物不產生Cu-In合金相,藉此改善表面形貌。利用Sb取代Al作隔層,作完RTA後,得到摻Sb的CIS薄膜在表面形貌比摻Al隔層的CIS或CIS更平整更緻密(晶粒大小皆為1μm以上)。
成分均勻性的測試則是利用EPMA及TEM中的EDS作量測,在EPMA量測中CIS及摻Sb的CIS成分均勻性較好(EPMA原子百分比的標準差皆小於1),摻Al的CIS薄膜則有較大的變動(EPMA原子百分比的標準差介於1~2之間),但成分比例與實驗設定偏差不大(設定CIS的Cu/In=1.05,摻Al 之CIS的Cu/In=1.05,摻Sb之CIS的Cu/In=0.90,量測結果的分別為1.05、1.05、0.89);而TEM中的EDS量測則與文獻提到的現象一樣,皆為變動較大的曲線(原子百分比的標準差皆大於1),但平均成分的Cu/In結果與EPMA結果相似。

By using Al interlayer to separate Cu and In, but Al is very easy to be oxidized by air. For avoiding that, using In layer can achieve that goal. And using Al interlayer can reduce the roughness of the CIS surface. The other idea is to substitute Al by Sb. In RTA selenzation process, the roughness of the CIS surface by with Sb interlayer is much smoother than using Al interlayer. And the grain with Sb interlayer is more compact (mean grain size is more than 1μm).
The composition test of CIS is measured by EPMA and EDS of TEM. In EPMA measurement, the composition of CIS by using Sb interlayer is more uniform (standard deviation is less than 1 atomic percent), and the composition of CIS by using Al interlayer is less uniform (standard deviation is 1 to 2 atomic percent). In these experiments, the assumption of composition of CIS is Cu/In=1.05, CIS with Al interlayer is Cu/In=1.05, CIS with Sb interlayer is Cu/In=0.90, and the results are 1.05, 1.05, and 0.89. The assumption is very close to the result. In EDS of TEM measurement, the results are the same as the result of paper (composition is different everywhere) and the standard deviation are bigger than 1 atomic percent, but the mean composition is similar to EPMA.

致謝 II
摘要 III
Abstract IV
目錄 V
表目錄: VIII
圖目錄: IX
一、簡介 1
1.1前言 1
1.2太陽能電池原理 1
二、文獻回顧與動機 3
2.1 CuInSe2(CIS)的性質 3
2.1.1 CIS主吸收層性質 3
2.1.2本質缺陷對CIS的影響 3
2.2 CIS製程分類及原理 4
2.2.1CIS慢速真空硒化製程 4
2.2.2 CIS之快速硒化製程(Rapid Thermal Annealing(RTA)) 5
2.2.3 兩階段式(two-step)的快速硒化製程 5
2.2.4 RTA對CIS製作的影響[27] 5
2.2.5 CIS快速硒化過程中的現象 7
2.2.6可能選用的疊層方式 8
2.2.7CIS成份均勻性 8
2.3CIS元件其他薄膜層 9
2.3.1金屬背電極:Mo 9
2.3.2緩衝層:CdS 11
2.3.3透明導電膜透光層:ZnO 12
2.3.4透光導電層及抗反射層:AZO 12
2.3.5金屬上電極:Al 13
三、實驗製程方法與分析儀器之介紹 14
3.1實驗流程 14
3.1.1 鈉玻璃基板準備 14
3.1.2 薄膜的鍍製 15
3.1.2.1 Cu、Al、In薄膜層的濺鍍 15
3.1.2.2 In、Se、Sb薄膜層的蒸鍍 16
3.1.2.3膜厚校正 17
3.1.2.4硒化反應 17
3.2 薄膜分析方法 18
3.2.1 X光繞射分析(X-Ray Diffraction) 18
3.2.2四點探針(Four-point probe) 19
3.2.3 掃描式電子顯微鏡(SEM) 19
3.2.4能量解析光譜儀(EDS) 20
3.2.5電子探針微區分析儀(EPMA) 20
3.2.6雙束型聚焦離子束(FIB) 21
3.2.7穿透式電子顯微鏡(TEM) 21
四、結果與討論 23
4.1加入Al隔層的CIS薄膜 23
4.1.1CIS薄膜前驅物及使用Al作為隔層的原因 23
4.1.2加入Al隔層的鍍製方法 24
4.1.3加入Al隔層的硒化結果-XRD 27
4.1.4 加入Al隔層的CIS表面形貌 27
4.1.4.1未加入Al隔層的表面形貌 27
4.1.4.2加入Al隔層的表面形貌 28
4.2加入Sb隔層的CIS薄膜 29
4.2.1使用Sb作為隔層的原因 29
4.2.2加入Sb的結果 30
4.3CIS成分測試 34
4.3.1EPMA成分檢測 34
4.3.1.1未加入Al隔層與加入Al隔層的CIS成分 34
4.3.1.2加入Sb隔層的CIS成分 35
4.3.2TEM-EDS成分檢測 35
4.4有關CIS太陽電池製作 39
4.4.1CIS太陽電池金屬背電極:Mo 39
4.4.2CIS太陽電池緩衝層:CdS製備前準備 40
五、結論 42
六、參考文獻 43


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