臺灣博碩士論文加值系統

本文主要是比較在不同基板上成長的非極化之氮化鎵
(non-polar GaN)，以掃描式電子顯微鏡 (SEM)、高解析度X
光繞射(HRXRD)、電子背向散射繞射 (EBSD)及陰極螢光
(CL)，進行結晶品質、表面形貌及光譜之分析。本文並藉由
觀察改變溫度及加速電壓在陰極螢光光譜的現象，配合穿隧
式電子顯微鏡(TEM)的影像。了解陰極螢光光譜與晶體缺陷
之間的利害關係。

M-plane non-polar GaN grown on different substrates are
analyzed and compared in this thesis. The crystal quality,
morphology and spectra of the m-plane non-polar GaN are
measured by field-emission electron microscopy (FESEM), high
resolution X-ray diffraction (HRXRD), electron back-scatter
diffraction (EBSD), and Cathodoluminescence (CL). The
temperature dependent and acceleration voltage dependent CL
spectra are compared with transmission electron microscopy
(TEM) image to understand the concern of CL spectra and
dislocation.

目錄 ------------------------------------------------------------------------------1
圖表目錄 ------------------------------------------------------------------------3
摘要 ------------------------------------------------------------------------------7
Abstract ---------------------------------------------------------------------------8
第一章 序論 ---------------------------------------------------------------9
第二章 量測系統與原理介紹 ----------------------------------------11
2-1 掃描式電子顯微鏡 ----------------------------------------------------11
2-2 X-ray 繞射 -------------------------------------------------------------17
2-3 電子背向散射繞射 ----------------------------------------------------18
2-4 能量散佈光譜儀 -------------------------------------------------------21
2-5 陰極螢光 ----------------------------------------------------------------23
第三章 樣品介紹 -------------------------------------------------------27
3-1 三族氮化物結構 -------------------------------------------------------27
3-2 樣品成長參數與結構 -------------------------------------------------28
第四章 實驗結果與分析 ----------------------------------------------31
4-1 掃描式電子顯微鏡 ----------------------------------------------------31
4-2 X-ray 繞射 --------------------------------------------------------------34
4-3 電子背向散射繞射 ----------------------------------------------------39
4-4 能量散佈光譜儀 -------------------------------------------------------42
4-5 陰極螢光 ----------------------------------------------------------------44
第五章 結論 ---------------------------------------------------------------59
參考文獻 ------------------------------------------------------------------------60
附錄
附錄A:EDS 原理與操作流程 ----------------------------------------------61
附錄B:EBSD 操作流程 -----------------------------------------------------65
附錄C:EDS 量測結果與形貌關係 ------------------------------------------68

[1] Frank L. Pedrotti “Introduction To Optics”, p.280
[2]工業材料雜誌201 期92 年9 月, p.104
[3] MARK FOX “Optical Properties of Solids”, p.98
[4]Acta Cryst. (1965) 19, 396-400
[5]Materials Science and Engineering R 37 (2002) 61–127
[6]PHYSICAL REVIEW B 79, 241308 R (2009)
[7]Elena R. Dobrovinskaya”SAPPHIRE”, p.91
[8]JOURNAL OF APPLIED PHYSICS VOLUME 92, 10 (2002)
[9]JOURNAL OF APPLIED PHYSICS 101, 113101 (2007)
[10]APPLIED PHYSICS LETTERS 95, 241910 (2009)
[11]Journal of Crystal Growth 310 (2008) 8–12
[12]APPLIED PHYSICS LETTERS 88, 011902 (2006)
[13]Microscopy of semiconducting materials 2003 p.291