臺灣博碩士論文加值系統

本文是針對在溫度的變化下，單根氮化鎵奈米柱(GaN nanorod)之缺陷研究，以及與bulk奈米柱之間的關係，並且以掃描式顯微鏡(SEM)、陰極螢光(CL)、微光致螢光(μ-PL)做為量測工具。本實驗最主要目的，藉由溫度的變化，在光譜圖上能有效的觀察到氮化鎵奈米柱之缺陷，並且探討奈米柱高比值的面積-體積比所產生的表面態。由CL光譜結果觀察出在20K時的表面態訊號較能隙間躍遷的訊號大。能量3.21eV的訊號來自於氮化鎵和矽基板之間的缺陷。由單根奈米柱在20K的訊號顯示出底部的表面態訊號大於來自頂部的表面態訊號。

In this article, we report the study of defects between single and bulk GaN nanorods in temperature dependence. High quality of GaN nanorods have been investigated by μ-photoluminescence. Optical properties and surface morphology have been analyzed by a series of measurements, including field-emission electron microscopy (FESEM), and cathodoluminescence (CL). CL data reveal that the intensity of surface state emission is larger than near-band-edge emission at 20K . The 3.21eV peak reveals the structural defect at GaN/Si interface. The surface state emission from bottom is larger than top.

序論 ............................................................... 1
1.1氮化鎵(GaN)的發展 ....................................................................................... 1
1.2氮化鎵奈米柱(GaN nanorods) ..................................................................... 2
第二章、儀器原理與介紹 ............................................. 5
2.1 螢光 ................................................................................................................ 5
2.1.1 微光致螢光(μ-PL)系統 .................................................................. 5
2.1.2 螢光導論 ............................................................................................ 6
2.1.3 光致螢光 ............................................................................................ 6
2.1.4 輻射耦合與非輻射耦合 .................................................................... 7
2.1.5 躍遷機制 ............................................................................................ 8
2.2 掃描式電子顯微鏡(Scanning electron microscope) .......................... 11
2.3 陰極螢光 (Cathodoluminescence, CL) .................................................. 14
第三章 樣品介紹 ................................................... 16
3.1 樣品製備 ...................................................................................................... 16
3.2 樣品參數 ...................................................................................................... 19
第四章 實驗結果分析 ............................................... 20
4.1 SEM結果 ....................................................................................................... 20
4.1.1 SEM定位 ........................................................................................... 20
4.1.2 SEM分析 ........................................................................................... 22
4.2 Micro-PL光譜分析 ..................................................................................... 26
4.3 陰極螢光分析 .............................................................................................. 28
第五章 結論 ....................................................... 44
參考文獻 .......................................................... 45

參考文獻
[1] E. F. Schubert, Light-Emitting Diodes 2nd edition, Cambridge University Press, p.223, (2006).
[2] M. A. Sanchez-Garcia, E. Calleja, E. Monroy, F. J. Sanchez, F. Calle, E. Munoz, and R. Beresford, J. Cryst. Growth 183, 23 (1998).
[3] M. Yoshizawa, A. Kikuchi, N. Fujita, K. Kushi, H. Sasamoto, and K. Kishino, J. Cryst. Growth 189/190, 138 (1998)
[4] S. Guha, N. Bojarczuk, M. Johnson, and J. Schetzina, Appl. Phys. Lett. 75, 463 (1999).
[5] E. Calleja, M. A. Sanchez-Garcia, F. J. Sanchez, F. Calle, F. B. Naranjo, E. Munoz, S. I. Molina, A. M. Sanchez, F. J. Pacheco, and R. Garcia, J. Cryst. Growth 201/202, 296 (1999).
[6] R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4 , 89 (1964).
[7] Vapor-liquid-solid mechanism of single crystal growth". Appl. Phys. Lett. 4 (5): 89.
[8] Semiconductor Nanostructures for Optoelectronic Applications. Norwood, MA: Artech House, Inc.. pp. 191–192.
[9] E. A. Stach, P. J. Pauzauskie, T. Kuykendall, J. Goldberger, R. He and P. Yang, Nano Lett. 3 (2003) 867.
[10] E. Calleja, M. A. OEanchez-Garæia, F. J. OEanchez, F. Calle, F. B. Naranjo, and Muòoz, Phys. Rev. B 62, 16826 (2000).
[11] Jelena Ristic, Enrique Calleja, Sergio Fernandez-Garrido, Laurent Cerutti, Achim Trampert, Uwe Jahn, Klaus H. Ploog, J. Cryst. Growth 310 (2008) 4035–4045.
[12] D.R. Vij ”Luminescence of Solids”, p.3.
[13] MARK FOX “Optical Properties of Solids”, p.98.
[14] E. Fred Schubert, “Light-Emitting Diodes”, p.35.
[15] Y.P. Varshni, Physica, 34, 149 (1967).
[16] L.W. Tu, Appl. Phys. Lett. 82, 1601 (2003).
[17] M. A. Reshchikov et al., J. Appl. Phys. 94, 5623 (2003).
[18] M. A. Reshchikov, Progress in Condensed Matter Research (Nova Science Publishers, Inc., New York, to be published).
[19] V. Consonni, M. Knelangen, U. Jahn, A. Trampert, L. Geelhaar, and H. Riechert, APL 95, 241910 (2009).
[20] A. P. Levanyuk and V. V. Osipov, Usp. Fiz. Nauk 133, 427 (1981).