臺灣博碩士論文加值系統

本研究利用射頻磁控濺鍍法沉積氧化鋅薄膜於可撓式不鏽鋼基板上以製作壓電換能器，並利用懸臂樑振動理論設計出適用於低頻環境的壓電換能器之尺寸；該壓電換能器懸臂樑尺寸為1cm及共振面積為1cm2。在本研究裡，藉由調變基板溫度、濺鍍功率及工作壓力以探討沉積參數對於氧化鋅薄膜的影響，並分析單位薄膜厚度下的發電量以選擇氧化鋅薄膜之最佳鍍膜參數，以期能達到壓電換能器最佳化。在物性分析方面，藉由掃描式電子顯微鏡與X光繞射儀分析薄膜表面型態、側面結構、結晶性，電量分析採用振動儀量測開路與負載電壓。由物性與電性分析結果顯示，最佳沉積條件為基板溫度300℃、濺鍍功率75W、工作壓力9 mTorr和氧氣濃度60%，在此條件下可獲得晶粒均勻和高C軸優選的晶向且單位厚度發電量高的薄膜。此外，銅金屬具有低成本與整流效果的優勢，適合用於壓電換能器之製作。因此，本文採用銅電極製作上電極，進而完成壓電換能器之製作。
本研究中，壓電換能器將外加0.57g的錫金屬作為質量負載，以幫助懸臂樑進行擺動。經由振動試驗儀輸入1~150Hz的振動能，並藉由示波器量測結果得知其共振頻率為75Hz；由實驗結果得知，開路電壓隨著振動擺幅的提升而增加；當振動擺幅為1.19mm時，可測得最大開路電壓為5.25V。元件經由1NN5711蕭特基二極體製作的橋式電路整流，以及33nF的電容濾波後，於負載電阻為5MΩ時，可以得到最大的發電功率為1.0μW/cm2。

This study presents a high-performance ZnO piezoelectric transducer integrated with the flexible stainless steel substrate. The ZnO piezoelectric film of 1.08nm was deposited on the flexible stainless steel substrate using a RF magnetron sputtering system. The cantilever length of 1cm and the vibration area of 1cm2 were designed for low-frequency environment according to the Cantilever Vibration Theory. The effects of various sputtering parameters such as substrate temperature, RF power and sputtering pressure were investigated to improve the piezoelectric characteristics of ZnO thin films. It was also discussed the unit thickness of open voltage values, and then the optimal sputtering parameters were determined. The physical characteristics of ZnO thin films were obtained by the analyses of the scanning electron microscopy (SEM) and X-ray diffraction (XRD) to discuss the surfaces, cross section and crystallization of ZnO thin films. The voltage analysis were measured the open and load voltage by the measurement system. The optimal deposition parameters for ZnO thin films are substrate temperature of 300℃, RF power of 75W, sputtering pressure of 9 mTorr and oxygen concentration of 60%, which were determined by physical characteristics and voltage analysis.
The study employs a precise mass loading of 0.57g on the cantilever to increase the vibration amplitude. The vibration source from 1~150Hz was provided to the piezoelectric transducer, and then the experimental results were showed resonance frequency of 75Hz by oscilloscope. When the optimal thickness of ZnO films is 1.08μm and vibration amplitude is 1.19mm, the open circuit voltage of the power generator is 5.25V.After rectifying and flitting with a capacitor of 33nF,the maximum power of 1.0μW/cm2 was achieved with the load resistance of 5MΩ.

誌謝 III
摘要 VI
ABSTRACT VIII
目錄 X
圖目錄 XII
表目錄 XIV
第一章 緒論 1
1-1 研究背景與動機 1
1-2 壓電換能器簡介 4
1-3 研究目的 9
第二章 理論分析 11
2-1 壓電理論 11
2-2 壓電薄膜-氧化鋅的結構與特性 13
2-3 壓電換能器結構介紹 14
2-4 壓電換能器原理 17
2-5 薄膜沉積原理 21
2-6 反應性射頻磁控濺鍍原理 23
2-6-1 輝光放電 23
2-6-2 射頻濺鍍 24
2-6-3 磁控濺鍍 25
2-6-4 反應性濺射 26
2-7 全波整流濾波電路 28
2-7-1 橋式整流電路工作原理 28
2-7-2 電容濾波工作原理 29
第三章 實驗 31
3-1 設計元件尺寸 32
3-2 薄膜沉積 32
3-2-1 基板之準備與清洗 32
3-2-2 射頻濺鍍系統與壓電層之沉積 33
3-3 壓電換能器製作流程 35
3-4 物理性質量測 36
3-4-1 X光繞射分析 36
3-4-2 掃描式電子顯微鏡SEM分析 38
3-5 電性量測 39
3-5-1 換能器共振頻率測量 40
3-5-2 雷射位移計量測輸入振動源 41
3-5-3 換能器開路電壓量測 42
3-5-4 換能器負載電壓量測 42
3-5-5 換能器整流濾波輸出負載電壓量測 43
3-6 薄膜附著性分析 44
3-6-1 奈米壓痕檢測系統 44
第四章 結果與討論 46
4-1 溫度調整 46
4-1-1 溫度對氧化鋅薄膜表面結構的影響 46
4-1-2 溫度對XRD的影響 48
4-1-3 溫度對發電量的影響 50
4-1-4 溫度結論 51
4-2 功率調整 52
4-2-1 功率對氧化鋅薄膜表面結構的影響 52
4-2-2 功率對XRD的影響 55
4-2-3 功率對發電量的影響 56
4-2-4 功率結論 57
4-3 壓力調整 57
4-3-1 壓力對氧化鋅薄膜表面結構的影響 57
4-3-2 濺鍍壓力對XRD的影響 59
4-3-3 壓力對發電量的影響 60
4-3-4 壓力結論 61
4-4 薄膜附著性分析 61
4-4-1 ZnO於ITO/PET的附著性分析 62
4-4-2 ZnO於SUS304的附著性分析 63
4-5 換能器輸出電壓量測討論 64
4-5-1 不同振動擺幅對輸出電壓的影響 64
4-5-2 不同負載對輸出電壓的影響 65
4-5-3 具整流濾波系統之壓電換能器 66
4-5-4 充電與LED發光實驗 67
第五章 結論與展望 69
參考文獻 70

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